Prodotti IXYS

MMIX1G120N120A3V1

IXYS

IGBT 1200V 220A 400W SMPD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 220A
• Current - Collector Pulsed (Icm): 700A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
• Power - Max: 400W
• Switching Energy: 10mJ (on), 33mJ (off)
• Input Type: Standard
• Gate Charge: 420nC
• Td (on/off) @ 25°C: 40ns/490ns
• Test Condition: 960V, 100A, 1 Ohm, 15V
• Reverse Recovery Time (trr): 700ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 24-PowerSMD, 21 Leads
• Supplier Device Package: SMPD

pacchetto: 24-PowerSMD, 21 Leads

IXBF9N160G

IXYS

IGBT 1600V 7A 70W I4PAC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1600V
• Current - Collector (Ic) (Max): 7A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 5A
• Power - Max: 70W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 34nC
• Td (on/off) @ 25°C: -
• Test Condition: 960V, 5A, 27 Ohm, 10V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: i4-Pac?-5 (3 leads)
• Supplier Device Package: ISOPLUS i4-PAC?

pacchetto: i4-Pac?-5 (3 leads)

IXYX25N250CV1HV

IXYS

IGBT 2500V 235A PLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 2500V
• Current - Collector (Ic) (Max): 95A
• Current - Collector Pulsed (Icm): 235A
• Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
• Power - Max: 937W
• Switching Energy: 8.3mJ (on), 7.3mJ (off)
• Input Type: Standard
• Gate Charge: 147nC
• Td (on/off) @ 25°C: 15ns/230ns
• Test Condition: 1250V, 25A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 220ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

pacchetto: TO-247-3

IXBX55N300

IXYS

IGBT 3000V 130A 625W PLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 3000V
• Current - Collector (Ic) (Max): 130A
• Current - Collector Pulsed (Icm): 600A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A
• Power - Max: 625W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 335nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): 1.9µs
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

pacchetto: TO-247-3

IXFH80N06

IXYS

MOSFET N-CH 60V 80A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

pacchetto: TO-247-3

IXFH32N50

IXYS

MOSFET N-CH 500V 32A TO-247AD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

pacchetto: TO-247-3

IXTH10N100D

IXYS

MOSFET N-CH 1000V 10A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
• Vgs (Max): ±30V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 400W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

pacchetto: TO-247-3

IXFT20N100P

IXYS

MOSFET N-CH 1000V 20A TO-268

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 660W (Tc)
• Rds On (Max) @ Id, Vgs: 570 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXKC20N60C

IXYS

MOSFET N-CH 600V 15A ISOPLUS220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS220?
• Package / Case: ISOPLUS220?

pacchetto: ISOPLUS220?

IXTA36N30T

IXYS

MOSFET N-CH 300V 36A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 110 mOhm @ 500mA, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXTA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTP120N04T2

IXYS

MOSFET N-CH 40V 120A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacchetto: TO-220-3

IXKR47N60C5

IXYS

MOSFET N-CH 600V 47A ISOPLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS247?
• Package / Case: ISOPLUS247?

pacchetto: ISOPLUS247?

IXFA10N60P

IXYS

MOSFET N-CH 600V 10A D2-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 740 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXFA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

MCD501-12IO1

IXYS

SCR THRYRISTOR 1200V WC-501

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• Current - Hold (Ih) (Max): -
• Operating Temperature: 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: WC-501

pacchetto: WC-501

MCC310-14IO1

IXYS

MOD THYRISTOR DUAL 1400V Y2-DCB

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1400V
• Current - On State (It (AV)) (Max): 320A
• Current - On State (It (RMS)) (Max): 500A
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
• Current - Hold (Ih) (Max): 150mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

pacchetto: Module

VHF125-12IO7

IXYS

RECT BRIDGE HALF 1200V PWS-E1

• Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
• Number of SCRs, Diodes: 2 SCRs, 2 Diodes
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): 89A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-E1

pacchetto: PWS-E1

MCD95-16IO8B

IXYS

MOD THYRISTOR/DIO 1600V TO-240AA

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1600V
• Current - On State (It (AV)) (Max): 116A
• Current - On State (It (RMS)) (Max): 180A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA

pacchetto: TO-240AA

VUO16012NO7

IXYS

BRIDGE RECT 3 PHASE 1200V 175A

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 175A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-E1
• Supplier Device Package: PWS-E1

pacchetto: PWS-E1

VBO25-16NO2

IXYS

DIODE BRIDGE 31A 1600V AVAL FO-A

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1600V
• Current - Average Rectified (Io): 38A
• Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
• Current - Reverse Leakage @ Vr: 300µA @ 1600V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 4-Square, FO-A
• Supplier Device Package: FO-A

pacchetto: 4-Square, FO-A

VUO18-14DT8

IXYS

RECT BRIDGE 18A 1400V FO-B

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1400V
• Current - Average Rectified (Io): 18A
• Voltage - Forward (Vf) (Max) @ If: 1.85V @ 55A
• Current - Reverse Leakage @ Vr: 300µA @ 1400V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 5-Square, FO-B
• Supplier Device Package: FO-B

pacchetto: 5-Square, FO-B

IXDP610PI

IXYS

IC PWM CTRL BUS DIGITAL 18DIP

• Applications: PWM Motor Controller
• Interface: Microprocessor
• Voltage - Supply: 4.5 V ~ 5.5 V
• Package / Case: 18-DIP (0.300", 7.62mm)
• Supplier Device Package: 18-DIP
• Mounting Type: Through Hole

pacchetto: 18-DIP (0.300", 7.62mm)

IXFA72N20X3

IXYS

MOSFET N-CH 200V 72A TO263AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
• Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 320W (Tc)
• Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263AA (IXFA)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

CMA40E1600HR

IXYS

SCR 1.6KV 63A ISO247

• Voltage - Off State: 1.6 kV
• Voltage - Gate Trigger (Vgt) (Max): 1.5 V
• Current - Gate Trigger (Igt) (Max): 50 mA
• Voltage - On State (Vtm) (Max): 1.23 V
• Current - On State (It (AV)) (Max): 40 A
• Current - On State (It (RMS)) (Max): 63 A
• Current - Hold (Ih) (Max): 100 mA
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
• SCR Type: Standard Recovery
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: ISO247

pacchetto: -

MCC550-16IO1

IXYS

MOD SCR THYRISTOR 1600V

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1.6 kV
• Current - On State (It (AV)) (Max): 550 A
• Current - On State (It (RMS)) (Max): 1318 A
• Voltage - Gate Trigger (Vgt) (Max): 3 V
• Current - Gate Trigger (Igt) (Max): 300 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A, 19800A
• Current - Hold (Ih) (Max): 1 A
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

pacchetto: -

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CMA50E1600HB

IXYS

SCR 1.6KV 79A TO247

• Voltage - Off State: 1.6 kV
• Voltage - Gate Trigger (Vgt) (Max): 1.5 V
• Current - Gate Trigger (Igt) (Max): 50 mA
• Voltage - On State (Vtm) (Max): 1.3 V
• Current - On State (It (AV)) (Max): 50 A
• Current - On State (It (RMS)) (Max): 79 A
• Current - Hold (Ih) (Max): 100 mA
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXTH)

pacchetto: -

IXTP64N10L2

IXYS

MOSFET N-CH 100V 64A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 357W (Tc)
• Rds On (Max) @ Id, Vgs: 32mOhm @ 32A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

pacchetto: -

IXFQ90N20X3

IXYS

MOSFET N-CH 200V 90A TO3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
• Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 390W (Tc)
• Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

pacchetto: -

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DMA10IM1600PZ-TRL

IXYS

DIODE GEN PURP 1.6KV 10A TO263HV

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
• Capacitance @ Vr, F: 4pF @ 400V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263HV
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

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