Prodotti IXYS

IXSH24N60AU1

IXYS

IGBT 600V 48A 150W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 48A
• Current - Collector Pulsed (Icm): 96A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
• Power - Max: 150W
• Switching Energy: 2mJ (off)
• Input Type: Standard
• Gate Charge: 75nC
• Td (on/off) @ 25°C: 100ns/450ns
• Test Condition: 480V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 50ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXSH)

pacchetto: TO-247-3

IXGR39N60B

IXYS

IGBT 600V 66A 140W ISOPLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 66A
• Current - Collector Pulsed (Icm): 152A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 39A
• Power - Max: 140W
• Switching Energy: 4mJ (off)
• Input Type: Standard
• Gate Charge: 125nC
• Td (on/off) @ 25°C: 25ns/250ns
• Test Condition: 480V, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

pacchetto: ISOPLUS247?

IXYK140N90C3

IXYS

IGBT 900V 310A 1630W TO264

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 900V
• Current - Collector (Ic) (Max): 310A
• Current - Collector Pulsed (Icm): 840A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
• Power - Max: 1630W
• Switching Energy: 4.3mJ (on), 4mJ (off)
• Input Type: Standard
• Gate Charge: 330nC
• Td (on/off) @ 25°C: 40ns/145ns
• Test Condition: 450V, 100A, 1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264 (IXYK)

pacchetto: TO-264-3, TO-264AA

IXXH50N60C3D1

IXYS

IGBT 600V 100A 600W TO247AD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 100A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
• Power - Max: 600W
• Switching Energy: 720µJ (on), 330µJ (off)
• Input Type: Standard
• Gate Charge: 64nC
• Td (on/off) @ 25°C: 24ns/62ns
• Test Condition: 360V, 36A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXXH)

pacchetto: TO-247-3

MWI150-06A8T

IXYS

IGBT SIXPACK 170A 600V E3PACK

• IGBT Type: NPT
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 170A
• Power - Max: 515W
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
• Current - Collector Cutoff (Max): 1.5mA
• Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: E3
• Supplier Device Package: E3

pacchetto: E3

IXFV18N90PS

IXYS

MOSFET N-CH 900V 18A PLUS220SMD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 540W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PLUS-220SMD
• Package / Case: PLUS-220SMD

pacchetto: PLUS-220SMD

IXFR38N80Q2

IXYS

MOSFET N-CH 800V 28A ISOPLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8340pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 416W (Tc)
• Rds On (Max) @ Id, Vgs: 240 mOhm @ 19A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS247?
• Package / Case: ISOPLUS247?

pacchetto: ISOPLUS247?

IXFT12N100

IXYS

MOSFET N-CH 1000V 12A TO-268

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTK150N15P

IXYS

MOSFET N-CH 150V 150A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 714W (Tc)
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264 (IXTK)
• Package / Case: TO-264-3, TO-264AA

pacchetto: TO-264-3, TO-264AA

IXFP230N075T2

IXYS

MOSFET N-CH 75V 230A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 480W (Tc)
• Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacchetto: TO-220-3

IXTP50N20PM

IXYS

MOSFET N-CH 200V 20A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 90W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220 Isolated Tab
• Package / Case: TO-220-3 Full Pack, Isolated Tab

pacchetto: TO-220-3 Full Pack, Isolated Tab

IXFK160N30T

IXYS

MOSFET N-CH 300V 160A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1390W (Tc)
• Rds On (Max) @ Id, Vgs: 19 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

pacchetto: TO-264-3, TO-264AA

GWM160-0055X1-SMD

IXYS

MOSFET 6N-CH 55V 150A ISOPLUS

• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 150A
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 17-SMD, Gull Wing
• Supplier Device Package: ISOPLUS-DIL?

pacchetto: 17-SMD, Gull Wing

MCO25-16IO1

IXYS

MOD THYRISTOR SGL 1600V SOT-227B

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1600V
• Current - On State (It (AV)) (Max): 31A
• Current - On State (It (RMS)) (Max): 49A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 55mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 370A, 400A
• Current - Hold (Ih) (Max): 100mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC

pacchetto: SOT-227-4, miniBLOC

DSEI2X30-06P

IXYS

DIODE MODULE 600V 30A ECO-PAC1

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC1
• Supplier Device Package: ECO-PAC1

pacchetto: ECO-PAC1

DSSK70-008A

IXYS

DIODE ARRAY SCHOTTKY 80V TO247AD

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 35A
• Voltage - Forward (Vf) (Max) @ If: 770mV @ 35A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 4mA @ 80V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-247AD

pacchetto: TO-3P-3 Full Pack

VUO125-18NO7

IXYS

RECT BRIDGE 3PH 1800V PWS-C

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1800V
• Current - Average Rectified (Io): 166A
• Voltage - Forward (Vf) (Max) @ If: 1.07V @ 50A
• Current - Reverse Leakage @ Vr: 200µA @ 1800V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-C
• Supplier Device Package: PWS-C

pacchetto: PWS-C

VUO62-12NO7

IXYS

RECT BRIDGE 3PH 63A 1200V PWS-D

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 63A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A
• Current - Reverse Leakage @ Vr: 300µA @ 1200V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-D
• Supplier Device Package: PWS-D

pacchetto: PWS-D

VBO54-12NO7

IXYS

DIODE BRIDGE 1200V 54A ECO-PAC1

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 54A
• Voltage - Forward (Vf) (Max) @ If: -
• Current - Reverse Leakage @ Vr: 40µA @ 1200V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC1
• Supplier Device Package: ECO-PAC1

pacchetto: ECO-PAC1

MX879RTR

IXYS

IC DVR RELAY/LOAD 8CH 60V 28-QFN

• Switch Type: General Purpose
• Number of Outputs: 8
• Ratio - Input:Output: 1:1
• Output Configuration: -
• Output Type: -
• Interface: SPI, Parallel
• Voltage - Load: 6 V ~ 60 V
• Voltage - Supply (Vcc/Vdd): 2.7 V ~ 5.5 V
• Current - Output (Max): 150mA
• Rds On (Typ): 7 Ohm
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 28-VFQFN Exposed Pad
• Supplier Device Package: 28-QFN (5x5)

pacchetto: 28-VFQFN Exposed Pad

IXDI409SIA

IXYS

IC MOSFET DVR 9A INV 8-SOIC

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 35 V
• Logic Voltage - VIL, VIH: 0.8V, 3.5V
• Current - Peak Output (Source, Sink): 9A, 9A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 10ns, 10ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacchetto: 8-SOIC (0.154", 3.90mm Width)

IXDD408PI

IXYS

IC MOSFET DRIVER LS 8A SGL 8-DIP

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 25 V
• Logic Voltage - VIL, VIH: 0.8V, 3.5V
• Current - Peak Output (Source, Sink): 8A, 8A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 14ns, 15ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-PDIP

pacchetto: 8-DIP (0.300", 7.62mm)

IXCP40M45

IXYS

IC CURRENT REGULATOR TO220AB

• Function: Current Regulator
• Sensing Method: -
• Accuracy: -
• Voltage - Input: -
• Current - Output: 40mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

pacchetto: TO-220-3

DHG40I4500KO

IXYS

DIODE GP 4.5KV 43A ISOPLUS264

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 4500 V
• Current - Average Rectified (Io): 43A
• Voltage - Forward (Vf) (Max) @ If: 3 V @ 50 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.45 µs
• Current - Reverse Leakage @ Vr: 100 µA @ 4500 V
• Capacitance @ Vr, F: 13pF @ 1.8kV, 1MHz
• Mounting Type: Through Hole
• Package / Case: ISOPLUS264™
• Supplier Device Package: ISOPLUS264™
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: -

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W1185LC450

IXYS

DIODE GEN PURP 4.5KV 1185A W4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 4500 V
• Current - Average Rectified (Io): 1185A
• Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 2420 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30 mA @ 4500 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: W4
• Operating Temperature - Junction: -55°C ~ 160°C

pacchetto: -

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IXXP12N65B4D1

IXYS

IGBT 650V 38A TO220-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 38 A
• Current - Collector Pulsed (Icm): 70 A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
• Power - Max: 160 W
• Switching Energy: 440µJ (on), 220µJ (off)
• Input Type: Standard
• Gate Charge: 34 nC
• Td (on/off) @ 25°C: 13ns/158ns
• Test Condition: 400V, 12A, 20Ohm, 15V
• Reverse Recovery Time (trr): 43 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

pacchetto: -

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IXTX3N250L

IXYS

MOSFET N-CH 2500V 3A PLUS247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 2500 V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 417W (Tc)
• Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247™-3
• Package / Case: TO-247-3 Variant

pacchetto: -

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CMA50E1600TZ-TUB

IXYS

SCR 1.6KV 79A TO268AA

• Voltage - Off State: 1.6 kV
• Voltage - Gate Trigger (Vgt) (Max): 1.5 V
• Current - Gate Trigger (Igt) (Max): 50 mA
• Voltage - On State (Vtm) (Max): 1.3 V
• Current - On State (It (AV)) (Max): 50 A
• Current - On State (It (RMS)) (Max): 79 A
• Current - Hold (Ih) (Max): 100 mA
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268AA (D3Pak-HV)

pacchetto: -

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