Prodotti IXYS

IXGH20N120BD1

IXYS

IGBT 1200V 40A 190W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
• Power - Max: 190W
• Switching Energy: 2.1mJ (off)
• Input Type: Standard
• Gate Charge: 72nC
• Td (on/off) @ 25°C: 25ns/150ns
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

pacchetto: TO-247-3

IXGQ28N120BD1

IXYS

IGBT 1200V 50A 250W TO3P

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A
• Power - Max: 250W
• Switching Energy: 2mJ (off)
• Input Type: Standard
• Gate Charge: 92nC
• Td (on/off) @ 25°C: 30ns/180ns
• Test Condition: 960V, 28A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 40ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

pacchetto: TO-3P-3, SC-65-3

IXFE44N50QD2

IXYS

MOSFET N-CH 500V 39A SOT-227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 39A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 400W (Tc)
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 22A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

pacchetto: SOT-227-4, miniBLOC

IXFH66N20Q

IXYS

MOSFET N-CH 200V 66A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 400W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 33A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

pacchetto: TO-247-3

IXTY24N15T

IXYS

MOSFET N-CH 150V 24A TO-252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

IXTN102N65X2

IXYS

MOSFET N-CH 650V 76A X2 SOT-227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 76A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 595W (Tc)
• Rds On (Max) @ Id, Vgs: 30 mOhm @ 51A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227
• Package / Case: SOT-227-4, miniBLOC

pacchetto: SOT-227-4, miniBLOC

IXFX80N60P3

IXYS

MOSFET N-CH 600V 80A PLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1300W (Tc)
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

pacchetto: TO-247-3

IXFK170N20T

IXYS

MOSFET N-CH 200V 170A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1150W (Tc)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

pacchetto: TO-264-3, TO-264AA

IXZ210N50L2

IXYS

RF MOSFET N-CHANNEL DE275

• Transistor Type: N-Channel
• Frequency: 2MHz ~ 110MHz
• Gain: -
• Voltage - Test: -
• Current Rating: 1mA
• Noise Figure: -
• Current - Test: -
• Power - Output: 390W
• Voltage - Rated: 500V
• Package / Case: 6-SMD, Flat Lead Exposed Pad
• Supplier Device Package: -

pacchetto: 6-SMD, Flat Lead Exposed Pad

GWM160-0055X1-SL

IXYS

MOSFET 6N-CH 55V 150A ISOPLUS

• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 150A
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 17-SMD, Flat Leads
• Supplier Device Package: ISOPLUS-DIL?

pacchetto: 17-SMD, Flat Leads

VHF55-16IO7

IXYS

RECT BRIDGE 1PH 1600V FO-T-A

• Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
• Number of SCRs, Diodes: 2 SCRs, 2 Diodes
• Voltage - Off State: 1600V
• Current - On State (It (AV)) (Max): 53A
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: FO-T-A

pacchetto: FO-T-A

MDO1200-22N1

IXYS

DIODE MODULE 2.2KV Y1-CU

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2200V
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: Y1-CU
• Supplier Device Package: Y1-CU
• Operating Temperature - Junction: -

pacchetto: Y1-CU

DGS13-025CS

IXYS

DIODE SCHOTTKY 250V 21A TO252AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 250V
• Current - Average Rectified (Io): 21A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 7.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 18ns
• Current - Reverse Leakage @ Vr: 250µA @ 250V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

DGS20-018AS-TUBE

IXYS

DIODE SCHOTTKY 180V 23A TO263AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 180V
• Current - Average Rectified (Io): 23A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 7.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 180V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DHG20I1200PA

IXYS

DIODE GEN PURP 1.2KV 20A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 2.7V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 30µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-2

DSA10I100PM

IXYS

DIODE SCHOTTKY 100V 10A TO220FP

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 890mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: TO-220FP
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-2 Full Pack

DSEE6-06CC

IXYS

DIODE ARRAY 600V 6A ISOPLUS220

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20ns
• Current - Reverse Leakage @ Vr: 25µA @ 600V
• Operating Temperature - Junction: -40°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: ISOPLUS220?
• Supplier Device Package: ISOPLUS220?

pacchetto: ISOPLUS220?

GUO40-08NO1

IXYS

3-PHASE BRIDGE RECT 800V 40A

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.28V @ 30A
• Current - Reverse Leakage @ Vr: 40µA @ 800V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 5-SIP
• Supplier Device Package: GUFP

pacchetto: 5-SIP

IXDI509D1

IXYS

IC GATE DRIVER SGL 9A 6-DFN

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 30 V
• Logic Voltage - VIL, VIH: 0.8V, 2.4V
• Current - Peak Output (Source, Sink): 9A, 9A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 25ns, 23ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Supplier Device Package: 6-DFN (4x5)

pacchetto: 6-VDFN Exposed Pad

QV6012NH5TP

IXYS

TRIAC SENS GATE 600V 12A TO263

• Triac Type: Logic - Sensitive Gate
• Voltage - Off State: 600 V
• Current - On State (It (RMS)) (Max): 12 A
• Voltage - Gate Trigger (Vgt) (Max): 1.2 V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
• Current - Gate Trigger (Igt) (Max): 50 mA
• Current - Hold (Ih) (Max): 50 mA
• Configuration: Single
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2PAK)

pacchetto: -

M0914LC200

IXYS

DIODE GEN PURP 2KV 914A W4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2000 V
• Current - Average Rectified (Io): 914A
• Voltage - Forward (Vf) (Max) @ If: 4.1 V @ 3770 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3.2 µs
• Current - Reverse Leakage @ Vr: 50 mA @ 2000 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: W4
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: -

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DSS6-0045AS-TUB

IXYS

DIODE SCHOTTKY 45V 6A TO252AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 630 mV @ 6 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250 µA @ 45 V
• Capacitance @ Vr, F: 497pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

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S6X8BBS3RP

IXYS

600V SENSITIVE SCR IN SOT89 PACK

• Voltage - Off State: 600 V
• Voltage - Gate Trigger (Vgt) (Max): 800 mV
• Current - Gate Trigger (Igt) (Max): 200 µA
• Voltage - On State (Vtm) (Max): 1.7 V
• Current - On State (It (AV)) (Max): 510 mA
• Current - On State (It (RMS)) (Max): 800 mA
• Current - Hold (Ih) (Max): 10 mA
• Current - Off State (Max): 5 µA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 10A, 12A
• SCR Type: Sensitive Gate
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: -

M1565VF450

IXYS

DIODE GEN PURP 4.5KV 1565A W43

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 4500 V
• Current - Average Rectified (Io): 1565A
• Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 5 µs
• Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AD
• Supplier Device Package: W43
• Operating Temperature - Junction: -40°C ~ 125°C

pacchetto: -

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MTC120WX55GD-SMD

IXYS

MOSFET 6N-CH 55V 150A

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
• Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
• Power - Max: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

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R1127NC32P

IXYS

SCR 3.2KV 2247A W11

• Voltage - Off State: 3.2 kV
• Voltage - Gate Trigger (Vgt) (Max): 3 V
• Current - Gate Trigger (Igt) (Max): 300 mA
• Voltage - On State (Vtm) (Max): 2.42 V
• Current - On State (It (AV)) (Max): 1127 A
• Current - On State (It (RMS)) (Max): 2247 A
• Current - Hold (Ih) (Max): 1 A
• Current - Off State (Max): 100 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 14100A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Clamp On
• Package / Case: TO-200AC, K-PUK
• Supplier Device Package: W11

pacchetto: -

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R1448NC20J

IXYS

SCR 2KV 2916A W11

• Voltage - Off State: 2 kV
• Voltage - Gate Trigger (Vgt) (Max): 3 V
• Current - Gate Trigger (Igt) (Max): 300 mA
• Voltage - On State (Vtm) (Max): 2.35 V
• Current - On State (It (AV)) (Max): 1448 A
• Current - On State (It (RMS)) (Max): 2916 A
• Current - Hold (Ih) (Max): 1 A
• Current - Off State (Max): 150 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Clamp On
• Package / Case: TO-200AC, K-PUK
• Supplier Device Package: W11

pacchetto: -

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IXFT15N100Q3-TRL

IXYS

MOSFET N-CH 1000V 15A TO268

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 690W (Tc)
• Rds On (Max) @ Id, Vgs: 1.05Ohm @ 7.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

pacchetto: -

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