Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS |
IC DRVR MOSF/IGBT 30A TO263-5
|
pacchetto: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
Azione4.064 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 8.5 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 18ns, 16ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | TO-263 (D2Pak) |
||
IXYS |
IC DRVR MOSF/IGBT 30A TO220-5
|
pacchetto: TO-220-5 |
Azione5.632 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 8.5 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 18ns, 16ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
||
IXYS |
IC DRVR MOSF/IGBT 30A TO220-5
|
pacchetto: TO-220-5 |
Azione6.720 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 8.5 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 18ns, 16ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
||
IXYS |
IC DRIVER MOSF/IGBT 14A 5-TO-263
|
pacchetto: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
Azione12.276 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3.5V | 14A, 14A | Non-Inverting | - | 22ns, 20ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | TO-263 (D2Pak) |
||
IXYS |
IC DRIVER MOSF/IGBT 14A 8-DIP
|
pacchetto: 8-DIP (0.300", 7.62mm) |
Azione14.940 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3.5V | 14A, 14A | Non-Inverting | - | 22ns, 20ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
IXYS |
IC DRIVER MOSF/IGBT 14A TO-220-5
|
pacchetto: TO-220-5 |
Azione5.808 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3.5V | 14A, 14A | Non-Inverting | - | 22ns, 20ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
||
IXYS |
IC MOSFET DRVR 9A LOSIDE TO263-5
|
pacchetto: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
Azione17.052 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3.5V | 9A, 9A | Non-Inverting | - | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | TO-263 (D2Pak) |
||
IXYS |
IC MOSFET DRVR 9A LOSIDE 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione7.648 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3.5V | 9A, 9A | Non-Inverting | - | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS |
IC MOSFET DRVR 9A LOSIDE 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione58.440 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3.5V | 9A, 9A | Non-Inverting | - | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS |
IC MOSFET DRVR 9A LOSIDE 8-DIP
|
pacchetto: 8-DIP (0.300", 7.62mm) |
Azione16.860 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3.5V | 9A, 9A | Non-Inverting | - | 10ns, 10ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
IXYS |
IC MOSFET DRVR 9A LOSIDE TO220-5
|
pacchetto: TO-220-5 |
Azione4.400 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3.5V | 9A, 9A | Non-Inverting | - | 10ns, 10ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
||
IXYS |
IC MOSFET DRVR DUAL 2A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione157.080 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 8ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS |
IC MOSFET DRVR DUAL 2A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione2.944 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 8ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS |
IC MOSFET DRVR DUAL 2A 8-DIP
|
pacchetto: 8-DIP (0.300", 7.62mm) |
Azione3.120 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 8ns, 8ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
IXYS |
IC GATE DRIVER SGL 14A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione4.544 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 1V, 2.5V | 14A, 14A | Inverting | - | 25ns, 22ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS |
IC GATE DRIVER SGL 14A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione4.048 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 1V, 2.5V | 14A, 14A | Inverting | - | 25ns, 22ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS |
IC GATE DRIVER SGL 14A 8-DIP
|
pacchetto: 8-DIP (0.300", 7.62mm) |
Azione3.424 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 1V, 2.5V | 14A, 14A | Inverting | - | 25ns, 22ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
IXYS |
IC GATE DRIVER SGL 14A 6-DFN
|
pacchetto: 6-VDFN Exposed Pad |
Azione7.264 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 1V, 2.5V | 14A, 14A | Inverting | - | 25ns, 22ns | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-DFN (4x5) |
||
IXYS |
IC GATE DRIVER SGL 14A 6-DFN
|
pacchetto: 6-VDFN Exposed Pad |
Azione3.840 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 1V, 2.5V | 14A, 14A | Inverting | - | 25ns, 22ns | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-DFN (4x5) |
||
IXYS |
IC GATE DRIVER SGL 9A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione2.224 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 9A, 9A | Inverting | - | 25ns, 23ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS |
IC GATE DRIVER SGL 9A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione4.400 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 9A, 9A | Inverting | - | 25ns, 23ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS |
IC GATE DRIVER SGL 9A 8-DIP
|
pacchetto: 8-DIP (0.300", 7.62mm) |
Azione7.056 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 9A, 9A | Inverting | - | 25ns, 23ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
IXYS |
IC GATE DRIVER SGL 9A 6-DFN
|
pacchetto: 6-VDFN Exposed Pad |
Azione7.664 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 9A, 9A | Inverting | - | 25ns, 23ns | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-DFN (4x5) |
||
IXYS |
IC GATE DRIVER SGL 9A 6-DFN
|
pacchetto: 6-VDFN Exposed Pad |
Azione3.888 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 9A, 9A | Inverting | - | 25ns, 23ns | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-DFN (4x5) |
||
IXYS |
IC GATE DRIVER DUAL 4A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione6.384 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS |
IC GATE DRIVER DUAL 4A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione60.564 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS |
IC GATE DRIVER DUAL 4A 8-DIP
|
pacchetto: 8-DIP (0.300", 7.62mm) |
Azione30.276 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
IXYS |
IC GATE DRIVER DUAL 4A 6-DFN
|
pacchetto: 6-VDFN Exposed Pad |
Azione4.304 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-DFN (4x5) |