Pagina 63 - Prodotti IXYS - Transistor - FET, MOSFET - Singoli | Heisener Electronics
Contattaci
SalesDept@heisener.com +86-755-83210559 ext. 706
Language Translation

* Please refer to the English Version as our Official Version.

Prodotti IXYS - Transistor - FET, MOSFET - Singoli

Record 2.558
Pagina  63/92
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IXFR32N80P
IXYS

MOSFET N-CH 800V 20A ISOPLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: ISOPLUS247?
pacchetto: ISOPLUS247?
Azione3.472
MOSFET (Metal Oxide)
800V
20A (Tc)
10V
5V @ 8mA
150nC @ 10V
8800pF @ 25V
±30V
-
300W (Tc)
290 mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
IXFK52N30Q
IXYS

MOSFET N-CH 300V 52A TO-264AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
pacchetto: TO-264-3, TO-264AA
Azione7.232
MOSFET (Metal Oxide)
300V
52A (Tc)
10V
4V @ 4mA
150nC @ 10V
5300pF @ 25V
±20V
-
360W (Tc)
60 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
FMD21-05QC
IXYS

MOSFET N-CH 500V 21A I4-PAC-5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS i4-PAC?
  • Package / Case: i4-Pac?-5
pacchetto: i4-Pac?-5
Azione6.304
MOSFET (Metal Oxide)
500V
21A (Tc)
10V
4.5V @ 250µA
95nC @ 10V
-
±20V
-
-
220 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS i4-PAC?
i4-Pac?-5
IXTT75N20L2
IXYS

MOSFET N-CH 200V 75A D2PAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Azione3.648
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXTT30N50L
IXYS

MOSFET N-CH 500V 30A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Azione5.584
MOSFET (Metal Oxide)
500V
30A (Tc)
10V
4.5V @ 250µA
240nC @ 10V
10200pF @ 25V
±20V
-
400W (Tc)
200 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
hot IXFH75N10Q
IXYS

MOSFET N-CH 100V 75A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 37.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione12.132
MOSFET (Metal Oxide)
100V
75A (Tc)
10V
4V @ 4mA
180nC @ 10V
3700pF @ 25V
±20V
-
300W (Tc)
20 mOhm @ 37.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
hot IXFH30N60Q
IXYS

MOSFET N-CH 600V 30A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione391.296
MOSFET (Metal Oxide)
600V
30A (Tc)
10V
4.5V @ 4mA
125nC @ 10V
4700pF @ 25V
±20V
-
500W (Tc)
230 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
IXTH10N100D
IXYS

MOSFET N-CH 1000V 10A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione2.336
MOSFET (Metal Oxide)
1000V
10A (Tc)
10V
3.5V @ 250µA
130nC @ 10V
2500pF @ 25V
±30V
Depletion Mode
400W (Tc)
1.4 Ohm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
IXFT74N20
IXYS

MOSFET N-CH 200V 74A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Azione4.656
MOSFET (Metal Oxide)
200V
74A (Tc)
10V
4V @ 4mA
280nC @ 10V
5400pF @ 25V
±20V
-
360W (Tc)
30 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTK80N25
IXYS

MOSFET N-CH 250V 80A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
pacchetto: TO-264-3, TO-264AA
Azione3.104
MOSFET (Metal Oxide)
250V
80A (Tc)
10V
4V @ 250µA
240nC @ 10V
6000pF @ 25V
±20V
-
540W (Tc)
33 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 (IXTK)
TO-264-3, TO-264AA
IXTK128N15
IXYS

MOSFET N-CH 150V 128A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
pacchetto: TO-264-3, TO-264AA
Azione4.912
MOSFET (Metal Oxide)
150V
128A (Tc)
10V
4V @ 250µA
240nC @ 10V
6000pF @ 25V
±20V
-
540W (Tc)
15 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 (IXTK)
TO-264-3, TO-264AA
IXFR13N50
IXYS

MOSFET N-CH 500V 13A ISOPLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: ISOPLUS247?
pacchetto: ISOPLUS247?
Azione5.648
MOSFET (Metal Oxide)
500V
13A (Tc)
-
-
-
-
-
-
-
-
-
Through Hole
ISOPLUS247?
ISOPLUS247?
IXFK520N075T2
IXYS

MOSFET N-CH 75V 520A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 520A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 545nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 41000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
pacchetto: TO-264-3, TO-264AA
Azione7.152
MOSFET (Metal Oxide)
75V
520A (Tc)
10V
5V @ 8mA
545nC @ 10V
41000pF @ 25V
±20V
-
1250W (Tc)
2.2 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
IXFT20N60Q
IXYS

MOSFET N-CH 600V 20A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Azione6.176
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
4.5V @ 4mA
90nC @ 10V
3300pF @ 25V
±30V
-
300W (Tc)
350 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTH20N60
IXYS

MOSFET N-CH 600V 20A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione2.560
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
4.5V @ 250µA
170nC @ 10V
4500pF @ 25V
±20V
-
300W (Tc)
350 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
IXFH60N20
IXYS

MOSFET N-CH 200V 60A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione3.232
MOSFET (Metal Oxide)
200V
60A (Tc)
10V
4V @ 4mA
155nC @ 10V
5200pF @ 25V
±20V
-
300W (Tc)
33 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
IXFR20N100P
IXYS

MOSFET N-CH 1000V 11A ISOPLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 640 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: ISOPLUS247?
pacchetto: ISOPLUS247?
Azione5.632
MOSFET (Metal Oxide)
1000V
11A (Tc)
10V
6.5V @ 1mA
126nC @ 10V
7300pF @ 25V
±30V
-
230W (Tc)
640 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
IXTQ30N50L2
IXYS

MOSFET N-CH 500V 30A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8100pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: TO-3P-3, SC-65-3
Azione5.232
MOSFET (Metal Oxide)
500V
30A (Tc)
10V
4.5V @ 250µA
240nC @ 10V
8100pF @ 25V
±20V
-
400W (Tc)
200 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
IXTQ30N50L
IXYS

MOSFET N-CH 500V 30A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: TO-3P-3, SC-65-3
Azione2.384
MOSFET (Metal Oxide)
500V
30A (Tc)
10V
4.5V @ 250µA
240nC @ 10V
10200pF @ 25V
±20V
-
400W (Tc)
200 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
IXFX520N075T2
IXYS

MOSFET N-CH 75V 520A PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 520A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 545nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 41000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione3.584
MOSFET (Metal Oxide)
75V
520A (Tc)
10V
5V @ 8mA
545nC @ 10V
41000pF @ 25V
±20V
-
1250W (Tc)
2.2 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PLUS247?-3
TO-247-3
IXTK200N10P
IXYS

MOSFET N-CH 100V 200A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
pacchetto: TO-264-3, TO-264AA
Azione3.424
MOSFET (Metal Oxide)
100V
200A (Tc)
10V
5V @ 500µA
240nC @ 10V
7600pF @ 25V
±20V
-
800W (Tc)
7.5 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-264 (IXTK)
TO-264-3, TO-264AA
IXTK140N20P
IXYS

MOSFET N-CH 200V 140A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
pacchetto: TO-264-3, TO-264AA
Azione7.536
MOSFET (Metal Oxide)
200V
140A (Tc)
10V
5V @ 500µA
240nC @ 10V
7500pF @ 25V
±20V
-
800W (Tc)
18 mOhm @ 70A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-264 (IXTK)
TO-264-3, TO-264AA
hot IXTK102N30P
IXYS

MOSFET N-CH 300V 102A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700W (Tc)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
pacchetto: TO-264-3, TO-264AA
Azione4.144
MOSFET (Metal Oxide)
300V
102A (Tc)
10V
5V @ 500µA
224nC @ 10V
7500pF @ 25V
±20V
-
700W (Tc)
33 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 (IXTK)
TO-264-3, TO-264AA
IXTH48N15
IXYS

MOSFET N-CH 150V 48A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione7.648
MOSFET (Metal Oxide)
150V
48A (Tc)
10V
-
140nC @ 10V
3200pF @ 25V
±20V
-
180W (Tc)
32 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
IXFT24N50
IXYS

MOSFET N-CH 500V 24A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Azione3.536
MOSFET (Metal Oxide)
500V
24A (Tc)
10V
4V @ 4mA
160nC @ 10V
4200pF @ 25V
±20V
-
300W (Tc)
230 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTH10N100D2
IXYS

MOSFET N-CH 1000V 10A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5320pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 695W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione4.352
MOSFET (Metal Oxide)
1000V
10A (Tc)
10V
-
200nC @ 5V
5320pF @ 25V
±20V
Depletion Mode
695W (Tc)
1.5 Ohm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
IXFT400N075T2
IXYS

MOSFET N-CH 75V 400A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1000W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Azione3.168
MOSFET (Metal Oxide)
75V
400A (Tc)
10V
4V @ 250µA
420nC @ 10V
24000pF @ 25V
±20V
-
1000W (Tc)
2.3 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTH10P50
IXYS

MOSFET P-CH 500V 10A TO-247AD

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione4.272
MOSFET (Metal Oxide)
500V
10A (Tc)
10V
5V @ 250µA
160nC @ 10V
4700pF @ 25V
±20V
-
300W (Tc)
900 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3