Pagina 12 - Prodotti IXYS - Transistor - FET, MOSFET - Singoli

IXFX44N50F

IXYS

MOSFET N-CH 44A PLUS247-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

IXTY08N100D2-TRL

IXYS

MOSFET N-CH 1000V 800MA TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

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MOSFET (Metal Oxide)

1000 V

800mA (Tj)

0V

4V @ 25µA

14.6 nC @ 5 V

325 pF @ 25 V

±20V

Depletion Mode

60W (Tc)

21Ohm @ 400mA, 0V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPAK (2 Leads + Tab), SC-63

IXFL36N110P

IXYS

MOSFET N-CH 36A ISOPLUS264

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

IXFH78N60X3

IXYS

MOSFET ULTRA JCT 600V 78A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 78A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 39A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

pacchetto: -

Azione3

MOSFET (Metal Oxide)

600 V

78A

10V

5V @ 4mA

70 nC @ 10 V

4700 pF @ 25 V

±20V

-

780W (Tc)

38mOhm @ 39A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247

TO-247-3

IXFM12N90Q

IXYS

MOSFET N-CH 900V 12A TO-204AA

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

IXTA52P10P-TRL

IXYS

MOSFET P-CH 100V 52A TO263

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 26A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

Azione6.513

MOSFET (Metal Oxide)

100 V

52A (Tc)

10V

4V @ 250µA

60 nC @ 10 V

2845 pF @ 25 V

±20V

-

300W (Tc)

50mOhm @ 26A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTN400N15X4

IXYS

MOSFET N-CH 150V 400A SOT227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1070W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

pacchetto: -

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MOSFET (Metal Oxide)

150 V

400A (Tc)

10V

4.5V @ 1mA

430 nC @ 10 V

14500 pF @ 25 V

±20V

-

1070W (Tc)

2.7mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXFK130N65X3

IXYS

DISCRETE MOSFET 130A 650V X3 TO2

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

IXTA44P15T-TRL

IXYS

MOSFET P-CH 150V 44A TO263

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

Azione69.444

MOSFET (Metal Oxide)

150 V

44A (Tc)

10V

4V @ 250µA

175 nC @ 10 V

13400 pF @ 25 V

±15V

-

298W (Tc)

65mOhm @ 22A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263AA

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFT180N20X3HV

IXYS

MOSFET N-CH 200V 180A TO268HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 90A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268HV (IXFT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

pacchetto: -

Azione90

MOSFET (Metal Oxide)

200 V

180A (Tc)

10V

4.5V @ 4mA

154 nC @ 10 V

10300 pF @ 25 V

±20V

-

780W (Tc)

7.5mOhm @ 90A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-268HV (IXFT)

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

IXTM5N100A

IXYS

MOSFET N-CH 1000V 5A TO204AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA (IXTM)
Package / Case: TO-204AA, TO-3

pacchetto: -

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MOSFET (Metal Oxide)

1000 V

5A (Tc)

10V

4.5V @ 250µA

130 nC @ 10 V

2600 pF @ 25 V

±20V

-

180W (Tc)

2Ohm @ 2.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-204AA (IXTM)

TO-204AA, TO-3

IXTA90N075T2-TRL

IXYS

MOSFET N-CH 75V 90A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 45A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

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MOSFET (Metal Oxide)

75 V

90A (Tc)

10V

4V @ 250µA

54 nC @ 10 V

3290 pF @ 25 V

±20V

-

180W (Tc)

10mOhm @ 45A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFH72N30X3

IXYS

MOSFET N-CH 300V 72A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

pacchetto: -

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MOSFET (Metal Oxide)

300 V

72A (Tc)

10V

4.5V @ 1.5mA

82 nC @ 10 V

5400 pF @ 25 V

±20V

-

390W (Tc)

19mOhm @ 36A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXTH)

TO-247-3

IXTA7N60P

IXYS

MOSFET N-CH 600V 7A D2-PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

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MOSFET (Metal Oxide)

600 V

7A (Tc)

-

5.5V @ 100µA

20 nC @ 10 V

1080 pF @ 25 V

-

150W (Tc)

1.1Ohm @ 3.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263AA

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTU4N70X2

IXYS

MOSFET N-CH 700V 4A TO251

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251-3
Package / Case: TO-251-3 Stub Leads, IPAK

pacchetto: -

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MOSFET (Metal Oxide)

700 V

4A (Tc)

10V

4.5V @ 250µA

11.8 nC @ 10 V

386 pF @ 25 V

±30V

-

80W (Tc)

850mOhm @ 2A, 10V

150°C (TJ)

Through Hole

TO-251-3

TO-251-3 Stub Leads, IPAK

IXFP26N65X2

IXYS

IXFP26N65X2

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

pacchetto: -

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MOSFET (Metal Oxide)

650 V

26A (Tc)

10V

5V @ 2.5mA

45 nC @ 10 V

2450 pF @ 25 V

±30V

-

460W (Tc)

130mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220

TO-220-3

IXFP26N65X3

IXYS

DISCRETE MOSFET 26A 650V X3 TO22

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

IXFN210N30X3

IXYS

MOSFET N-CH 300V 210A SOT227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 695W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 105A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

pacchetto: -

Azione141

MOSFET (Metal Oxide)

300 V

210A (Tc)

10V

4.5V @ 8mA

375 nC @ 10 V

24200 pF @ 25 V

±20V

-

695W (Tc)

4.6mOhm @ 105A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXFA20N85XHV-TRL

IXYS

MOSFET N-CH 850V 20A TO263HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263HV
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

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MOSFET (Metal Oxide)

850 V

20A (Tc)

10V

5.5V @ 2.5mA

63 nC @ 10 V

1660 pF @ 25 V

±30V

-

540W (Tc)

330mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263HV

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTT72N10

IXYS

MOSFET N-CH 100V 72A TO268

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

IXTT140N075L2HV

IXYS

MOSFET N-CH 75V 140A TO268HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75 V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9300 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268HV (IXTT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

pacchetto: -

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MOSFET (Metal Oxide)

75 V

140A (Tc)

10V

4.5V @ 250µA

275 nC @ 10 V

9300 pF @ 25 V

±20V

-

540W (Tc)

11mOhm @ 70A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-268HV (IXTT)

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

IXFP44N25X3

IXYS

MOSFET N-CH 250V 44A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

pacchetto: -

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MOSFET (Metal Oxide)

250 V

44A (Tc)

10V

4.5V @ 1mA

33 nC @ 10 V

2200 pF @ 25 V

±20V

-

240W (Tc)

40mOhm @ 22A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220

TO-220-3

IXTA340N04T4-TRL

IXYS

MOSFET N-CH TO263

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

IXTQ50N28T

IXYS

MOSFET N-CH TO3P

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

IXFH150N25X3HV

IXYS

MOSFET N-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

±20V

-

IXTN15N100

IXYS

MOSFET N-CH SOT227

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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IXTA15N50L2-TRL

IXYS

MOSFET N-CH 500V 15A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

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MOSFET (Metal Oxide)

500 V

15A (Tc)

10V

4.5V @ 250µA

123 nC @ 10 V

4080 pF @ 25 V

±20V

-

300W (Tc)

480mOhm @ 7.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFM35N30

IXYS

MOSFET N-CH 300V 35A TO204AE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AE
Package / Case: TO-204AE

pacchetto: -

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MOSFET (Metal Oxide)

300 V

35A (Tc)

10V

4V @ 4mA

200 nC @ 10 V

4800 pF @ 25 V

±20V

-

300W (Tc)

100mOhm @ 17.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-204AE

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFX44N50F	IXYS	MOSFET N-CH 44A PLUS247-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTY08N100D2-TRL	IXYS	MOSFET N-CH 1000V 800MA TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 800mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	800mA (Tj)	0V	4V @ 25µA	14.6 nC @ 5 V	325 pF @ 25 V	±20V	Depletion Mode	60W (Tc)	21Ohm @ 400mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFL36N110P	IXYS	MOSFET N-CH 36A ISOPLUS264 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFH78N60X3	IXYS	MOSFET ULTRA JCT 600V 78A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 78A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 39A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	pacchetto: -	Azione3	MOSFET (Metal Oxide)	600 V	78A	10V	5V @ 4mA	70 nC @ 10 V	4700 pF @ 25 V	±20V	-	780W (Tc)	38mOhm @ 39A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXFM12N90Q	IXYS	MOSFET N-CH 900V 12A TO-204AA FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA52P10P-TRL	IXYS	MOSFET P-CH 100V 52A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Azione6.513	MOSFET (Metal Oxide)	100 V	52A (Tc)	10V	4V @ 250µA	60 nC @ 10 V	2845 pF @ 25 V	±20V	-	300W (Tc)	50mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTN400N15X4	IXYS	MOSFET N-CH 150V 400A SOT227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1070W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	150 V	400A (Tc)	10V	4.5V @ 1mA	430 nC @ 10 V	14500 pF @ 25 V	±20V	-	1070W (Tc)	2.7mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFK130N65X3	IXYS	DISCRETE MOSFET 130A 650V X3 TO2 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA44P15T-TRL	IXYS	MOSFET P-CH 150V 44A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Azione69.444	MOSFET (Metal Oxide)	150 V	44A (Tc)	10V	4V @ 250µA	175 nC @ 10 V	13400 pF @ 25 V	±15V	-	298W (Tc)	65mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFT180N20X3HV	IXYS	MOSFET N-CH 200V 180A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 90A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXFT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	pacchetto: -	Azione90	MOSFET (Metal Oxide)	200 V	180A (Tc)	10V	4.5V @ 4mA	154 nC @ 10 V	10300 pF @ 25 V	±20V	-	780W (Tc)	7.5mOhm @ 90A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268HV (IXFT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXTM5N100A	IXYS	MOSFET N-CH 1000V 5A TO204AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (IXTM) Package / Case: TO-204AA, TO-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	5A (Tc)	10V	4.5V @ 250µA	130 nC @ 10 V	2600 pF @ 25 V	±20V	-	180W (Tc)	2Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-204AA (IXTM)	TO-204AA, TO-3
IXTA90N075T2-TRL	IXYS	MOSFET N-CH 75V 90A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	75 V	90A (Tc)	10V	4V @ 250µA	54 nC @ 10 V	3290 pF @ 25 V	±20V	-	180W (Tc)	10mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFH72N30X3	IXYS	MOSFET N-CH 300V 72A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	300 V	72A (Tc)	10V	4.5V @ 1.5mA	82 nC @ 10 V	5400 pF @ 25 V	±20V	-	390W (Tc)	19mOhm @ 36A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTA7N60P	IXYS	MOSFET N-CH 600V 7A D2-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	600 V	7A (Tc)	-	5.5V @ 100µA	20 nC @ 10 V	1080 pF @ 25 V	-	-	150W (Tc)	1.1Ohm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTU4N70X2	IXYS	MOSFET N-CH 700V 4A TO251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251-3 Package / Case: TO-251-3 Stub Leads, IPAK	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	700 V	4A (Tc)	10V	4.5V @ 250µA	11.8 nC @ 10 V	386 pF @ 25 V	±30V	-	80W (Tc)	850mOhm @ 2A, 10V	150°C (TJ)	Through Hole	TO-251-3	TO-251-3 Stub Leads, IPAK
IXFP26N65X2	IXYS	IXFP26N65X2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	650 V	26A (Tc)	10V	5V @ 2.5mA	45 nC @ 10 V	2450 pF @ 25 V	±30V	-	460W (Tc)	130mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IXFP26N65X3	IXYS	DISCRETE MOSFET 26A 650V X3 TO22 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFN210N30X3	IXYS	MOSFET N-CH 300V 210A SOT227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 695W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 105A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	pacchetto: -	Azione141	MOSFET (Metal Oxide)	300 V	210A (Tc)	10V	4.5V @ 8mA	375 nC @ 10 V	24200 pF @ 25 V	±20V	-	695W (Tc)	4.6mOhm @ 105A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFA20N85XHV-TRL	IXYS	MOSFET N-CH 850V 20A TO263HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263HV Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	850 V	20A (Tc)	10V	5.5V @ 2.5mA	63 nC @ 10 V	1660 pF @ 25 V	±30V	-	540W (Tc)	330mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263HV	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTT72N10	IXYS	MOSFET N-CH 100V 72A TO268 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTT140N075L2HV	IXYS	MOSFET N-CH 75V 140A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXTT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	75 V	140A (Tc)	10V	4.5V @ 250µA	275 nC @ 10 V	9300 pF @ 25 V	±20V	-	540W (Tc)	11mOhm @ 70A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268HV (IXTT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXFP44N25X3	IXYS	MOSFET N-CH 250V 44A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	250 V	44A (Tc)	10V	4.5V @ 1mA	33 nC @ 10 V	2200 pF @ 25 V	±20V	-	240W (Tc)	40mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IXTA340N04T4-TRL	IXYS	MOSFET N-CH TO263 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTQ50N28T	IXYS	MOSFET N-CH TO3P FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFH150N25X3HV	IXYS	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	±20V	-	-	-	-	-	-	-
IXTN15N100	IXYS	MOSFET N-CH SOT227 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA15N50L2-TRL	IXYS	MOSFET N-CH 500V 15A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	500 V	15A (Tc)	10V	4.5V @ 250µA	123 nC @ 10 V	4080 pF @ 25 V	±20V	-	300W (Tc)	480mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFM35N30	IXYS	MOSFET N-CH 300V 35A TO204AE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AE Package / Case: TO-204AE	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	300 V	35A (Tc)	10V	4V @ 4mA	200 nC @ 10 V	4800 pF @ 25 V	±20V	-	300W (Tc)	100mOhm @ 17.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-204AE	TO-204AE