Pagina 56 - Prodotti ISSI, Integrated Silicon Solution Inc - Memoria

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS43DR82560B-3DBL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 60TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (10.5x13)	pacchetto: 60-TFBGA	Azione3.904	DRAM	SDRAM - DDR2	2Gb (256M x 8)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	0°C ~ 70°C	Surface Mount	60-TFBGA	60-TWBGA (10.5x13)
IS43DR82560B-3DBLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 60TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (10.5x13)	pacchetto: 60-TFBGA	Azione5.472	DRAM	SDRAM - DDR2	2Gb (256M x 8)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TWBGA (10.5x13)
IS43DR82560B-25EBL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 60TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (10.5x13)	pacchetto: 60-TFBGA	Azione3.152	DRAM	SDRAM - DDR2	2Gb (256M x 8)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TWBGA (10.5x13)
IS43DR82560B-25EBLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 60TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (10.5x13)	pacchetto: 60-TFBGA	Azione3.536	DRAM	SDRAM - DDR2	2Gb (256M x 8)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TWBGA (10.5x13)
IS43DR81280C-3DBI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 60TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (8x10.5)	pacchetto: 60-TFBGA	Azione7.504	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TWBGA (8x10.5)
IS43DR81280B-3DBI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 60TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (8x10.5)	pacchetto: 60-TFBGA	Azione4.800	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TWBGA (8x10.5)
IS43DR81280B-25EBL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 60TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (8x10.5)	pacchetto: 60-TFBGA	Azione5.040	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	400MHz	15ns	450ps	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	60-TFBGA	60-TWBGA (8x10.5)
IS43DR81280B-25EBLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 60TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (8x10.5)	pacchetto: 60-TFBGA	Azione4.784	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	400MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TWBGA (8x10.5)
IS43DR16640B-25EBL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 84TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-TWBGA (8x12.5)	pacchetto: 84-TFBGA	Azione7.760	DRAM	SDRAM - DDR2	1Gb (64M x 16)	Parallel	400MHz	15ns	450ps	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	84-TFBGA	84-TWBGA (8x12.5)
IS43DR16640B-25EBLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 84TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-TWBGA (8x12.5)	pacchetto: 84-TFBGA	Azione7.328	DRAM	SDRAM - DDR2	1Gb (64M x 16)	Parallel	400MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	84-TFBGA	84-TWBGA (8x12.5)
IS43DR16160B-3DBI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 84TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-TWBGA (8x12.5)	pacchetto: 84-TFBGA	Azione6.288	DRAM	SDRAM - DDR2	256Mb (16M x 16)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TC)	Surface Mount	84-TFBGA	84-TWBGA (8x12.5)
IS42S83200J-7BL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 54TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	pacchetto: 54-TFBGA	Azione6.848	DRAM	SDRAM	256Mb (32M x 8)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C	Surface Mount	54-TFBGA	54-TFBGA (8x8)
IS42S83200J-7BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 54TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	pacchetto: 54-TFBGA	Azione6.256	DRAM	SDRAM	256Mb (32M x 8)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C	Surface Mount	54-TFBGA	54-TFBGA (8x8)
IS42S32800G-7BI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 90TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	pacchetto: 90-TFBGA	Azione6.384	DRAM	SDRAM	256Mb (8M x 32)	Parallel	143MHz	-	-	3 V ~ 3.6 V	-40°C ~ 85°C	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS42S32400F-7B-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 128M PARALLEL 90TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	pacchetto: 90-TFBGA	Azione4.864	DRAM	SDRAM	128Mb (4M x 32)	Parallel	143MHz	-	-	3 V ~ 3.6 V	0°C ~ 70°C	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS42S32400F-7BI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 128M PARALLEL 90TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	pacchetto: 90-TFBGA	Azione4.224	DRAM	SDRAM	128Mb (4M x 32)	Parallel	143MHz	-	-	3 V ~ 3.6 V	-40°C ~ 85°C	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS42S32400F-6B-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 128M PARALLEL 90TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	pacchetto: 90-TFBGA	Azione6.400	DRAM	SDRAM	128Mb (4M x 32)	Parallel	166MHz	-	-	3 V ~ 3.6 V	0°C ~ 70°C	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS42S32400F-6BI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 128M PARALLEL 90TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	pacchetto: 90-TFBGA	Azione5.792	DRAM	SDRAM	128Mb (4M x 32)	Parallel	166MHz	-	-	3 V ~ 3.6 V	-40°C ~ 85°C	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS42S32200L-7B-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 64M PARALLEL 90TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (2M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	pacchetto: 90-TFBGA	Azione4.656	DRAM	SDRAM	64Mb (2M x 32)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS42S32200L-7BI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 64M PARALLEL 90TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (2M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	pacchetto: 90-TFBGA	Azione7.888	DRAM	SDRAM	64Mb (2M x 32)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS42S16800F-7B-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 128M PARALLEL 143MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	pacchetto: 54-TFBGA	Azione5.888	DRAM	SDRAM	128Mb (8M x 16)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C	Surface Mount	54-TFBGA	54-TFBGA (8x8)
IS42S16800F-7BI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 128M PARALLEL 143MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	pacchetto: 54-TFBGA	Azione4.736	DRAM	SDRAM	128Mb (8M x 16)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C	Surface Mount	54-TFBGA	54-TFBGA (8x8)
IS42S16800F-6B-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 128M PARALLEL 166MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	pacchetto: 54-TFBGA	Azione7.360	DRAM	SDRAM	128Mb (8M x 16)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C	Surface Mount	54-TFBGA	54-TFBGA (8x8)
IS42S16800F-6BI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 128M PARALLEL 166MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	pacchetto: 54-TFBGA	Azione5.632	DRAM	SDRAM	128Mb (8M x 16)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C	Surface Mount	54-TFBGA	54-TFBGA (8x8)
IS42S16160J-6TI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 166MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	pacchetto: 54-TSOP (0.400", 10.16mm Width)	Azione5.152	DRAM	SDRAM	256Mb (16M x 16)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
IS42S16160G-7BI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 54TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	pacchetto: 54-TFBGA	Azione4.272	DRAM	SDRAM	256Mb (16M x 16)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C	Surface Mount	54-TFBGA	54-TFBGA (8x8)
IS42S16160G-6TI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 166MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	pacchetto: 54-TSOP (0.400", 10.16mm Width)	Azione5.504	DRAM	SDRAM	256Mb (16M x 16)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
IS42S16160G-6BI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 54TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	pacchetto: 54-TFBGA	Azione3.456	DRAM	SDRAM	256Mb (16M x 16)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C	Surface Mount	54-TFBGA	54-TFBGA (8x8)

IS43DR82560B-3DBL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 60TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (10.5x13)

pacchetto: 60-TFBGA

Azione3.904

DRAM

SDRAM - DDR2

2Gb (256M x 8)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

0°C ~ 70°C

Surface Mount

60-TFBGA

60-TWBGA (10.5x13)

IS43DR82560B-3DBLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 60TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (10.5x13)

pacchetto: 60-TFBGA

Azione5.472

DRAM

SDRAM - DDR2

2Gb (256M x 8)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TWBGA (10.5x13)

IS43DR82560B-25EBL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 60TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (10.5x13)

pacchetto: 60-TFBGA

Azione3.152

DRAM

SDRAM - DDR2

2Gb (256M x 8)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TWBGA (10.5x13)

IS43DR82560B-25EBLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 60TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (10.5x13)

pacchetto: 60-TFBGA

Azione3.536

DRAM

SDRAM - DDR2

2Gb (256M x 8)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TWBGA (10.5x13)

IS43DR81280C-3DBI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 60TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)

pacchetto: 60-TFBGA

Azione7.504

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TWBGA (8x10.5)

IS43DR81280B-3DBI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 60TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)

pacchetto: 60-TFBGA

Azione4.800

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TWBGA (8x10.5)

IS43DR81280B-25EBL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 60TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)

pacchetto: 60-TFBGA

Azione5.040

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

400MHz

15ns

450ps

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

60-TFBGA

60-TWBGA (8x10.5)

IS43DR81280B-25EBLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 60TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)

pacchetto: 60-TFBGA

Azione4.784

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

400MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TWBGA (8x10.5)

IS43DR16640B-25EBL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 84TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)

pacchetto: 84-TFBGA

Azione7.760

DRAM

SDRAM - DDR2

1Gb (64M x 16)

Parallel

400MHz

15ns

450ps

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

84-TFBGA

84-TWBGA (8x12.5)

IS43DR16640B-25EBLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 84TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)

pacchetto: 84-TFBGA

Azione7.328

DRAM

SDRAM - DDR2

1Gb (64M x 16)

Parallel

400MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

84-TFBGA

84-TWBGA (8x12.5)

IS43DR16160B-3DBI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 84TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)

pacchetto: 84-TFBGA

Azione6.288

DRAM

SDRAM - DDR2

256Mb (16M x 16)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TC)

Surface Mount

84-TFBGA

84-TWBGA (8x12.5)

IS42S83200J-7BL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 54TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

pacchetto: 54-TFBGA

Azione6.848

DRAM

SDRAM

256Mb (32M x 8)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C

Surface Mount

54-TFBGA

54-TFBGA (8x8)

IS42S83200J-7BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 54TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

pacchetto: 54-TFBGA

Azione6.256

DRAM

SDRAM

256Mb (32M x 8)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C

Surface Mount

54-TFBGA

54-TFBGA (8x8)

IS42S32800G-7BI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 90TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

pacchetto: 90-TFBGA

Azione6.384

DRAM

SDRAM

256Mb (8M x 32)

Parallel

143MHz

-

3 V ~ 3.6 V

-40°C ~ 85°C

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS42S32400F-7B-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 128M PARALLEL 90TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

pacchetto: 90-TFBGA

Azione4.864

DRAM

SDRAM

128Mb (4M x 32)

Parallel

143MHz

-

3 V ~ 3.6 V

0°C ~ 70°C

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS42S32400F-7BI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 128M PARALLEL 90TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

pacchetto: 90-TFBGA

Azione4.224

DRAM

SDRAM

128Mb (4M x 32)

Parallel

143MHz

-

3 V ~ 3.6 V

-40°C ~ 85°C

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS42S32400F-6B-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 128M PARALLEL 90TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

pacchetto: 90-TFBGA

Azione6.400

DRAM

SDRAM

128Mb (4M x 32)

Parallel

166MHz

-

3 V ~ 3.6 V

0°C ~ 70°C

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS42S32400F-6BI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 128M PARALLEL 90TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

pacchetto: 90-TFBGA

Azione5.792

DRAM

SDRAM

128Mb (4M x 32)

Parallel

166MHz

-

3 V ~ 3.6 V

-40°C ~ 85°C

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS42S32200L-7B-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 64M PARALLEL 90TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (2M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

pacchetto: 90-TFBGA

Azione4.656

DRAM

SDRAM

64Mb (2M x 32)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS42S32200L-7BI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 64M PARALLEL 90TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (2M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

pacchetto: 90-TFBGA

Azione7.888

DRAM

SDRAM

64Mb (2M x 32)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS42S16800F-7B-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 128M PARALLEL 143MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

pacchetto: 54-TFBGA

Azione5.888

DRAM

SDRAM

128Mb (8M x 16)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C

Surface Mount

54-TFBGA

54-TFBGA (8x8)

IS42S16800F-7BI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 128M PARALLEL 143MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

pacchetto: 54-TFBGA

Azione4.736

DRAM

SDRAM

128Mb (8M x 16)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C

Surface Mount

54-TFBGA

54-TFBGA (8x8)

IS42S16800F-6B-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 128M PARALLEL 166MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

pacchetto: 54-TFBGA

Azione7.360

DRAM

SDRAM

128Mb (8M x 16)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C

Surface Mount

54-TFBGA

54-TFBGA (8x8)

IS42S16800F-6BI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 128M PARALLEL 166MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

pacchetto: 54-TFBGA

Azione5.632

DRAM

SDRAM

128Mb (8M x 16)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C

Surface Mount

54-TFBGA

54-TFBGA (8x8)

IS42S16160J-6TI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 166MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

pacchetto: 54-TSOP (0.400", 10.16mm Width)

Azione5.152

DRAM

SDRAM

256Mb (16M x 16)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

IS42S16160G-7BI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 54TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

pacchetto: 54-TFBGA

Azione4.272

DRAM

SDRAM

256Mb (16M x 16)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C

Surface Mount

54-TFBGA

54-TFBGA (8x8)

IS42S16160G-6TI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 166MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

pacchetto: 54-TSOP (0.400", 10.16mm Width)

Azione5.504

DRAM

SDRAM

256Mb (16M x 16)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

IS42S16160G-6BI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 54TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

pacchetto: 54-TFBGA

Azione3.456

DRAM

SDRAM

256Mb (16M x 16)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C

Surface Mount

54-TFBGA

54-TFBGA (8x8)