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Infineon Technologies |
IGBT 650V 14A 33.3W PG-TO220-3
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 14A
- Current - Collector Pulsed (Icm): 45A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Power - Max: 33.3W
- Switching Energy: 120µJ (on), 50µJ (off)
- Input Type: Standard
- Gate Charge: 38nC
- Td (on/off) @ 25°C: 17ns/160ns
- Test Condition: 400V, 7.5A, 39 Ohm, 15V
- Reverse Recovery Time (trr): 48ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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pacchetto: TO-220-3 |
Azione8.772 |
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Infineon Technologies |
IGBT 600V 80A 333W TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 80A
- Current - Collector Pulsed (Icm): 150A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
- Power - Max: 333W
- Switching Energy: 2.6mJ
- Input Type: Standard
- Gate Charge: 310nC
- Td (on/off) @ 25°C: 26ns/299ns
- Test Condition: 400V, 50A, 7 Ohm, 15V
- Reverse Recovery Time (trr): 143ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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pacchetto: TO-247-3 |
Azione103.464 |
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Infineon Technologies |
MOSFET N-CH 650V 12A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 440µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione2.368 |
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Infineon Technologies |
MOSFET N-CH 55V 30A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: P-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione999.096 |
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Infineon Technologies |
MOSFET N-CH 200V 3.4A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 4.2A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MZ
- Package / Case: DirectFET? Isometric MZ
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pacchetto: DirectFET? Isometric MZ |
Azione6.672 |
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Infineon Technologies |
MOSFET N-CH 8TDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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pacchetto: 8-PowerTDFN |
Azione3.712 |
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Infineon Technologies |
MOSFET N-CH 600V 23.8A TO220-FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 750µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 11.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-FP
- Package / Case: TO-220-3 Full Pack
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pacchetto: TO-220-3 Full Pack |
Azione20.928 |
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Infineon Technologies |
MOSFET P-CH 40V 180A TO263-7
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 410µA
- Gate Charge (Qg) (Max) @ Vgs: 286nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 18700pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
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pacchetto: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Azione4.512 |
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Infineon Technologies |
TRANSISTOR NPN RF 12V SOT-323
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
- Gain: 10.5dB ~ 16dB
- Power - Max: 580mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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pacchetto: SC-70, SOT-323 |
Azione3.952 |
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Infineon Technologies |
IC SECONDARY SIDE CTRLR 8DSO
- Applications: Secondary-Side Controller
- Voltage - Input: -
- Voltage - Supply: 8 V ~ 42 V
- Current - Supply: 1.5mA
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione7.744 |
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Infineon Technologies |
IC SWITCH HI-SIDE 1CH D-PAK-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 6 V ~ 35 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 2A
- Rds On (Typ): 55 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-252-6, DPak (5 Leads + Tab)
- Supplier Device Package: D-Pak 5-Lead
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pacchetto: TO-252-6, DPak (5 Leads + Tab) |
Azione5.760 |
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Infineon Technologies |
IC SLIC VOICE ACCESS PDSO-20
- Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
- Interface: IOM-2, PCM
- Number of Circuits: 2
- Voltage - Supply: 5V
- Current - Supply: 105mA
- Power (Watts): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
- Supplier Device Package: P-DSO-20
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pacchetto: 20-SOIC (0.433", 11.00mm Width) Exposed Pad |
Azione4.032 |
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Infineon Technologies |
IC LINE INTERFACE SLIC PDSO-24
- Function: Subscriber Line Interface Concept (SLIC)
- Interface: -
- Number of Circuits: 1
- Voltage - Supply: 5V
- Current - Supply: 2.8mA
- Power (Watts): 730mW
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 24-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: PG-DSO-24
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pacchetto: 24-SOIC (0.295", 7.50mm Width) |
Azione5.808 |
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Infineon Technologies |
IC MCU 32BIT 8MB FLASH 292LFBGA
- Core Processor: TriCore?
- Core Size: 32-Bit
- Speed: 300MHz
- Connectivity: ASC, CAN, Ethernet, FlexRay, HSSL, I2C, LIN, MSC, PSI5, QSPI, SENT
- Peripherals: DMA, WDT
- Number of I/O: 263
- Program Memory Size: 8MB (8M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 384K x 8
- RAM Size: 2.75M x 8
- Voltage - Supply (Vcc/Vdd): 3.3V, 5V
- Data Converters: A/D 60x12b, 10 x Sigma-Delta
- Oscillator Type: External
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 292-LFBGA
- Supplier Device Package: PG-LFBGA-292-6
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pacchetto: 292-LFBGA |
Azione6.928 |
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Infineon Technologies |
IC FILTER/ESD PROT WLP-8-6
- Function: -
- Applications: -
- Number of Channels: -
- Interface: -
- Voltage - Supply: -
- Operating Temperature: -
- Specifications: -
- Package / Case: 8-UFBGA, WLCSP
- Supplier Device Package: WLP-8-6
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pacchetto: 8-UFBGA, WLCSP |
Azione7.184 |
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Infineon Technologies |
IC XPHASE CONTROL 28-MLPQ
- Applications: Processor
- Current - Supply: 14mA
- Voltage - Supply: 9.5 V ~ 16 V
- Operating Temperature: 0°C ~ 100°C
- Mounting Type: Surface Mount
- Package / Case: 28-VFQFN Exposed Pad
- Supplier Device Package: 28-MLPQ (5x5)
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pacchetto: 28-VFQFN Exposed Pad |
Azione9.204 |
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Infineon Technologies |
DIODE MOD 2200V 700A BGPB60E2A-1
- Diode Configuration: 1 Pair Series Connection
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): 2200 V
- Current - Average Rectified (Io) (per Diode): 700A
- Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 2200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 mA @ 2.2 kV
- Operating Temperature - Junction: 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB60E2A-1
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pacchetto: - |
Request a Quote |
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Infineon Technologies |
IC FLASH NOR 48FBGA
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacchetto: - |
Request a Quote |
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Infineon Technologies |
IC SRAM 32MBIT PARALLEL 48FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 32Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55 ns
- Voltage - Supply: 2.2V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-FBGA (6x8)
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pacchetto: - |
Request a Quote |
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Infineon Technologies |
STD SPI
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 64Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 2ms
- Access Time: 6 ns
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
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pacchetto: - |
Request a Quote |
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Infineon Technologies |
SIC 2N-CH 1200V 200A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
- Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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pacchetto: - |
Request a Quote |
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Infineon Technologies |
IGBT TRENCH FS 600V 80A TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
- Power - Max: 178 W
- Switching Energy: 2.7mJ (on), 2.35J (off)
- Input Type: Standard
- Gate Charge: 440 nC
- Td (on/off) @ 25°C: 33ns/340ns
- Test Condition: 400V, 75A, 5Ohm, 15V
- Reverse Recovery Time (trr): 107 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-AI
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pacchetto: - |
Azione600 |
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Infineon Technologies |
PROFET
- Switch Type: Relay, Solenoid Driver
- Number of Outputs: 2
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: Logic
- Voltage - Load: 3.1V ~ 18V
- Voltage - Supply (Vcc/Vdd): 3.1V ~ 18V
- Current - Output (Max): 3.5A
- Rds On (Typ): 19mOhm
- Input Type: Non-Inverting
- Features: Load Discharge, Slew Rate Controlled
- Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-TSDSO-14
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pacchetto: - |
Azione3.000 |
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Infineon Technologies |
TRENCH 40<-<100V PG-TO263-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 282A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 267µA
- Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-14
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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pacchetto: - |
Azione3.462 |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 44ns/324ns
- Test Condition: 400V, 30A, 11Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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pacchetto: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BT 1.0625MB FLSH 64LQFP
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
- Core Size: 32-Bit Dual-Core
- Speed: 100MHz, 160MHz
- Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
- Number of I/O: 49
- Program Memory Size: 1.0625MB (1.0625M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 96K x 8
- RAM Size: 128K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 45x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-LQFP (10x10)
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pacchetto: - |
Azione4.650 |
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Infineon Technologies |
LOW POWER ECONO AG-ECONO2C-211
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Power - Max: 210 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2C
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pacchetto: - |
Azione30 |
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Infineon Technologies |
IC PSRAM 128MBIT SPI/OCTL 24FBGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 128Mbit
- Memory Interface: SPI - Octal I/O
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
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pacchetto: - |
Request a Quote |
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