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Prodotti Infineon Technologies

Record 16.988
Pagina  316/607
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
hot IRL540NLPBF
Infineon Technologies

MOSFET N-CH 100V 36A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 44 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione86.400
hot IRL3715Z
Infineon Technologies

MOSFET N-CH 20V 50A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione399.084
hot IRF3709
Infineon Technologies

MOSFET N-CH 30V 90A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione42.552
IPD127N06LGBTMA1
Infineon Technologies

MOSFET N-CH 60V 50A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.7 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione2.624
BSL372SNH6327XTSA1
Infineon Technologies

MOSFET N-CH 100V 2A 6TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 218µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 329pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSOP6-6
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione5.088
hot IRF6619TR1
Infineon Technologies

MOSFET N-CH 20V 30A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5040pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
pacchetto: DirectFET? Isometric MX
Azione16.548
hot IRFH7911TRPBF
Infineon Technologies

MOSFET 2N-CH 30V 13A/28A PQFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A, 28A
  • Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V
  • Power - Max: 2.4W, 3.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 18-PowerVQFN
  • Supplier Device Package: PQFN (5x6)
pacchetto: 18-PowerVQFN
Azione115.224
BB85702VH7902XTSA1
Infineon Technologies

DIODE TUNING 30V 20MA SC79-2

  • Capacitance @ Vr, F: 0.52pF @ 28V, 1MHz
  • Capacitance Ratio: 12.7
  • Capacitance Ratio Condition: C1/C28
  • Voltage - Peak Reverse (Max): 30V
  • Diode Type: Single
  • Q @ Vr, F: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SC-79
pacchetto: SC-79, SOD-523
Azione5.296
BAT5404WH6327XTSA1
Infineon Technologies

DIODE ARRAY SCHOTTKY 30V SOT323

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
pacchetto: SC-70, SOT-323
Azione4.432
hot IRU1015CM
Infineon Technologies

IC REG LINEAR POS ADJ 1.5A TO263

  • Output Configuration: Positive
  • Output Type: Adjustable
  • Number of Regulators: 1
  • Voltage - Input (Max): 7V
  • Voltage - Output (Min/Fixed): 2.5V
  • Voltage - Output (Max): 3.3V
  • Voltage Dropout (Max): 1.3V @ 1.5A
  • Current - Output: 1.5A
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 10mA
  • PSRR: 70dB (120Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: 0°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
  • Supplier Device Package: TO-263
pacchetto: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Azione36.000
hot IRU3037CFTR
Infineon Technologies

IC REG CTRLR BUCK/BOOST 8TSSOP

  • Output Type: Transistor Driver
  • Function: Step-Up, Step-Down
  • Output Configuration: Positive
  • Topology: Buck, Boost
  • Number of Outputs: 1
  • Output Phases: 1
  • Voltage - Supply (Vcc/Vdd): 4.2 V ~ 25 V
  • Frequency - Switching: 200kHz
  • Duty Cycle (Max): 90%
  • Synchronous Rectifier: Yes
  • Clock Sync: No
  • Serial Interfaces: -
  • Control Features: Enable, Soft Start
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione210.000
IR21593S
Infineon Technologies

IC CTRLR BALLAST DIMMING 16-SOIC

  • Type: Ballast Controller
  • Frequency: 30kHz ~ 230kHz
  • Voltage - Supply: 12 V ~ 16.5 V
  • Current - Supply: 10mA
  • Current - Output Source/Sink: -
  • Dimming: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.154", 3.90mm Width)
Azione5.152
hot IR3556MTRPBF
Infineon Technologies

IC DRIVER GATE 50A PQFN

  • Output Configuration: -
  • Applications: Synchronous Buck Converters, Voltage Regulators
  • Interface: PWM
  • Load Type: Inductive
  • Technology: -
  • Rds On (Typ): -
  • Current - Output / Channel: 50A
  • Current - Peak Output: -
  • Voltage - Supply: 4.5 V ~ 7 V
  • Voltage - Load: 4.5 V ~ 15 V
  • Operating Temperature: -
  • Features: Diode Emulation, Status Flag
  • Fault Protection: Current Limiting, Over Temperature, Over Voltage, UVLO
  • Mounting Type: Surface Mount
  • Package / Case: 30-PowerVFQFN
  • Supplier Device Package: 30-PQFN (6x6)
pacchetto: 30-PowerVFQFN
Azione7.740
IRSM005-800MHTR
Infineon Technologies

IC GATE DRIVER 40V QFN

  • Output Configuration: Half Bridge
  • Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
  • Interface: Logic
  • Load Type: Inductive, Capacitive
  • Technology: Power MOSFET
  • Rds On (Typ): 2.7 mOhm
  • Current - Output / Channel: 80A
  • Current - Peak Output: -
  • Voltage - Supply: 10 V ~ 20 V
  • Voltage - Load: 40V (Max)
  • Operating Temperature: 150°C (TJ)
  • Features: Bootstrap Circuit
  • Fault Protection: UVLO
  • Mounting Type: Surface Mount
  • Package / Case: 27-PowerVQFN
  • Supplier Device Package: 27-PQFN (7x8)
pacchetto: 27-PowerVQFN
Azione7.056
ADM6996A2T1
Infineon Technologies

IC SWITCH CTRLR 10/100 128QFP

  • Protocol: Ethernet
  • Function: Switch
  • Interface: Parallel
  • Standards: 10/100 Base-T/TX PHY
  • Voltage - Supply: 2.8 V ~ 3.465 V
  • Current - Supply: -
  • Operating Temperature: 0°C ~ 115°C
  • Package / Case: 128-BFQFP
  • Supplier Device Package: PG-BFQFP-128
pacchetto: 128-BFQFP
Azione2.176
XMC4400F100F512BAXQMA1
Infineon Technologies

IC MCU 32BIT 512KB FLASH 100LQFP

  • Core Processor: ARM? Cortex?-M4
  • Core Size: 32-Bit
  • Speed: 120MHz
  • Connectivity: CAN, Ethernet, I2C, LIN, SPI, UART, USB
  • Peripherals: DMA, I2S, LED, POR, PWM, WDT
  • Number of I/O: 55
  • Program Memory Size: 512KB (512K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 80K x 8
  • Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
  • Data Converters: A/D 24x12b, D/A 2x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 100-LQFP Exposed Pad
  • Supplier Device Package: PG-LQFP-100-25
pacchetto: 100-LQFP Exposed Pad
Azione4.976
BGS 12AL7-6 E6433
Infineon Technologies

IC SWITCH RF SPDT TSLP7-6

  • Frequency - Lower: 30MHz
  • Frequency - Upper: 3GHz
  • Isolation @ Frequency: 25dB @ 2GHz (typ)
  • Insertion Loss @ Frequency: 0.5dB @ 2GHz
  • IIP3: -
  • Topology: Reflective
  • Circuit: SPDT
  • P1dB: -
  • Features: DC Blocked, Single Line Control
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • RF Type: General Purpose
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: TSLP-7-6
pacchetto: 6-XFDFN Exposed Pad
Azione8.730
IR3541MGB01TRP
Infineon Technologies

IC REGULATOR PG-VQFN-40-902

  • Applications: Controller, DDR, Intel VR12, AMD SVI
  • Voltage - Input: 3.3V
  • Number of Outputs: 2
  • Voltage - Output: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 40-VFQFN Exposed Pad
  • Supplier Device Package: 40-QFN (6x6)
pacchetto: 40-VFQFN Exposed Pad
Azione7.056
TLE4278GXUMA3
Infineon Technologies

IC REG LDO 5V 0.15A 14DSO

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: -
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: -
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.720
IPT60R022S7XTMA1
Infineon Technologies

MOSFET N-CH 600V 23A 8HSOF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 390W (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-2
  • Package / Case: 8-PowerSFN
pacchetto: -
Azione3.384
CY8C4247AZA-M475T
Infineon Technologies

PSOC4 - GENERAL

  • Core Processor: ARM® Cortex®-M0
  • Core Size: 32-Bit
  • Speed: 48MHz
  • Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
  • Number of I/O: 51
  • Program Memory Size: 128KB (128K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x12b SAR; D/A 4x7/8b
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (10x10)
pacchetto: -
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CY95F778ENPMC1-G-103UNE2
Infineon Technologies

MULTI-MARKET MCUS

  • Core Processor: F²MC-8FX
  • Core Size: 8-Bit
  • Speed: 16.25MHz
  • Connectivity: I2C, SIO, UART/USART
  • Peripherals: LCD, LVD, POR, PWM, WDT
  • Number of I/O: 55
  • Program Memory Size: 60KB (60K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 2K x 8
  • Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
  • Data Converters: A/D 8x8/10b
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-LQFP (10x10)
pacchetto: -
Request a Quote
IGOT60R070D1AUMA3
Infineon Technologies

GANFET N-CH

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
  • Vgs (Max): -10V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-DSO-20-87
  • Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
pacchetto: -
Azione3.237
CY90F823APF-G-UJE1
Infineon Technologies

IC MCU 8BIT MICOM

  • Core Processor: -
  • Core Size: -
  • Speed: -
  • Connectivity: -
  • Peripherals: -
  • Number of I/O: -
  • Program Memory Size: -
  • Program Memory Type: -
  • EEPROM Size: -
  • RAM Size: -
  • Voltage - Supply (Vcc/Vdd): -
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
CYAT81655-64AS48T
Infineon Technologies

PSOC BASED - TRUETOUCH

  • Touchscreen: 2 Wire Capacitive
  • Resolution (Bits): -
  • Interface: I2C, SPI
  • Voltage Reference: -
  • Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
  • Current - Supply: -
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: -
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SIDC14D60C8X1SA1
Infineon Technologies

DIODE GEN PURP 600V 50A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: -
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TT425N12KOFHPSA2
Infineon Technologies

SCR MODULE 1.2KV 800A MODULE

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 1.2 kV
  • Current - On State (It (AV)) (Max): 471 A
  • Current - On State (It (RMS)) (Max): 800 A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5 V
  • Current - Gate Trigger (Igt) (Max): 250 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
  • Current - Hold (Ih) (Max): 300 mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
pacchetto: -
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CY2292SXL-1H7
Infineon Technologies

IC 3PLL EPROM CLOCK GEN 16-SOIC

  • Type: Clock Generator
  • PLL: Yes
  • Input: CMOS, Crystal
  • Output: CMOS
  • Number of Circuits: 1
  • Ratio - Input:Output: 1:6
  • Differential - Input:Output: No/No
  • Frequency - Max: 80MHz
  • Divider/Multiplier: Yes/No
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: -
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