Prodotti Infineon Technologies

IGW25T120

Infineon Technologies

IGBT 1200V 50A 190W TO247-3

• IGBT Type: NPT, Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 75A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
• Power - Max: 190W
• Switching Energy: 4.2mJ
• Input Type: Standard
• Gate Charge: 155nC
• Td (on/off) @ 25°C: 50ns/560ns
• Test Condition: 600V, 25A, 22 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

pacchetto: TO-247-3

IRG4BC40FPBF

Infineon Technologies

IGBT 600V 49A 160W TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 49A
• Current - Collector Pulsed (Icm): 196A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
• Power - Max: 160W
• Switching Energy: 370µJ (on), 1.81mJ (off)
• Input Type: Standard
• Gate Charge: 100nC
• Td (on/off) @ 25°C: 26ns/240ns
• Test Condition: 480V, 27A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

pacchetto: TO-220-3

IPD180N10N3GBTMA1

Infineon Technologies

MOSFET N-CH 100V 43A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 33µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 71W (Tc)
• Rds On (Max) @ Id, Vgs: 18 mOhm @ 33A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFSL4620PBF

Infineon Technologies

MOSFET N-CH 200V 24A TO262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 144W (Tc)
• Rds On (Max) @ Id, Vgs: 77.5 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

IRFSL4710PBF

Infineon Technologies

MOSFET N-CH 100V 75A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
• Rds On (Max) @ Id, Vgs: 14 mOhm @ 45A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

IRFS4115TRLPBF

Infineon Technologies

MOSFET N-CH 150V 195A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5270pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 12.1 mOhm @ 62A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF7307PBF

Infineon Technologies

MOSFET N/P-CH 20V 8-SOIC

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

BFP740H6327XTSA1

Infineon Technologies

TRANS RF NPN 42GHZ 4.7V SOT343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 4.7V
• Frequency - Transition: 42GHz
• Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
• Gain: 27dB
• Power - Max: 160mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: SOT-343

pacchetto: SC-82A, SOT-343

BB 565 E7908

Infineon Technologies

DIODE VAR CAP 30V 20MA SCD-80

• Capacitance @ Vr, F: 2.2pF @ 28V, 1MHz
• Capacitance Ratio: 11
• Capacitance Ratio Condition: C1/C28
• Voltage - Peak Reverse (Max): 30V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-80
• Supplier Device Package: PG-SCD80-2

pacchetto: SC-80

IR35204MTRPBF

Infineon Technologies

IC CTRLR PWM MULTIPHASE 40QFN

• Applications: Multiphase Controller
• Current - Supply: -
• Voltage - Supply: 3.3V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: -
• Supplier Device Package: 40-QFN (5x5)

pacchetto: -

6EDM2003L06F15X1SA1

Infineon Technologies

IC GATE DRIVER BARE DIE

• Driven Configuration: -
• Channel Type: -
• Number of Drivers: -
• Gate Type: -
• Voltage - Supply: -
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): -
• Input Type: -
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

PEF 22554 E V3.1

Infineon Technologies

IC LIU E1/T1/J1 160LBGA

• Function: Framer, Line Interface Unit (LIU)
• Interface: E1, HDLC, J1, T1
• Number of Circuits: 4
• Voltage - Supply: 1.8V, 3.3V
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 160-LBGA
• Supplier Device Package: P-LBGA-160

pacchetto: 160-LBGA

ADM8515X-AC-T-1

Infineon Technologies

IC CTRLR LAND USB-ETHER 100-LQFP

• Protocol: Ethernet
• Function: Bridge, USB to Ethernet
• Interface: USB
• Standards: USB 2.0, 10/100 Base-T/TX PHY
• Voltage - Supply: 3 V ~ 3.6 V
• Current - Supply: -
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Supplier Device Package: PG-LQFP-100

pacchetto: 100-LQFP

BGSA11GN10E6327XTSA1

Infineon Technologies

IC SWITCH RF 10TSNP

• Frequency - Lower: -
• Frequency - Upper: -
• Isolation @ Frequency: -
• Insertion Loss @ Frequency: -
• IIP3: -
• Topology: -
• Circuit: -
• P1dB: -
• Features: -
• Impedance: -
• Operating Temperature: -
• Voltage - Supply: -
• RF Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

S25FL064LABMFV001

Infineon Technologies

IC FLASH 64MBIT SPI/QUAD 16SOIC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 108 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

pacchetto: -

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CG8959AMT

Infineon Technologies

IC

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

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FF300R12KE3HOSA1

Infineon Technologies

IGBT MOD 1200V 440A 1450W

• IGBT Type: Trench Field Stop
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 440 A
• Power - Max: 1450 W
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

pacchetto: -

PXE1410CDMG003XTMA1

Infineon Technologies

IC CTLR PRIMARION 40VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

2ED2744S01GXTMA1

Infineon Technologies

160 V HALF BRIDGE SOI GATE DRIVE

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 7V ~ 18V
• Logic Voltage - VIL, VIH: 0.8V, 2V
• Current - Peak Output (Source, Sink): 2A, 4A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 160 V
• Rise / Fall Time (Typ): 24ns, 12ns
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 10-VFDFN Exposed Pad
• Supplier Device Package: PG-VSON-10-5

pacchetto: -

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PEB20256FEV2-1

Infineon Technologies

MUNICH256 MULTI CHANNEL NETWORK

• Function: -
• Interface: -
• Number of Circuits: -
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

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CY9BF121LPMC1-G-MNE2

Infineon Technologies

IC MCU 32BIT 96KB FLASH 64LQFP

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit Single-Core
• Speed: 72MHz
• Connectivity: CSIO, I2C, LINbus, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 50
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 23x12b; D/A 2x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

pacchetto: -

XDPS2201VXUMA1

Infineon Technologies

DIGITAL CHARGER/ADAPTER

• Output Type: Transistor Driver
• Function: Step-Up/Step-Down
• Output Configuration: Positive
• Topology: Flyback
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 10V ~ 24V
• Frequency - Switching: 20kHz ~ 250kHz
• Duty Cycle (Max): -
• Synchronous Rectifier: No
• Clock Sync: No
• Serial Interfaces: -
• Control Features: Enable, Phase Control, Soft Start
• Operating Temperature: -25°C ~ 125°C (TJ)
• Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
• Supplier Device Package: PG-DSO-14-66

pacchetto: -

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FF150R12KE3GHOSA1

Infineon Technologies

IGBT MOD 1200V 225A 780W

• IGBT Type: Trench Field Stop
• Configuration: Single Chopper
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 225 A
• Power - Max: 780 W
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

pacchetto: -

T430N14TOFXPSA1

Infineon Technologies

SCR MODULE 1800V 700A DO200AA

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1.8 kV
• Current - On State (It (AV)) (Max): 433 A
• Current - On State (It (RMS)) (Max): 700 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 200 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AA

pacchetto: -

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BSM300GA120DLCHOSA1

Infineon Technologies

IGBT MOD 1200V 570A 2250W

• IGBT Type: -
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 570 A
• Power - Max: 2250 W
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

pacchetto: -

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BTS247Z

Infineon Technologies

N-CHANNEL POWER MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

pacchetto: -

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CY7C4831-10AC

Infineon Technologies

IC SYNC FIFO 2KX9X2 64LQFP

• Memory Size: 36K (2K x 9 x 2)
• Function: Synchronous
• Data Rate: 100MHz
• Access Time: 8ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Supply (Max): 60mA
• Bus Directional: Bi-Directional
• Expansion Type: Depth, Width
• Programmable Flags Support: Yes
• Retransmit Capability: No
• FWFT Support: No
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (14x14)

pacchetto: -

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T1330N22TOFVTXPSA1

Infineon Technologies

SCR MODULE 2200V 2600A DO200AC

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 2.2 kV
• Current - On State (It (AV)) (Max): 1330 A
• Current - On State (It (RMS)) (Max): 2600 A
• Voltage - Gate Trigger (Vgt) (Max): 2.2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 26500A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Clamp On
• Package / Case: TO-200AC

pacchetto: -

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