Prodotti Infineon Technologies

IRFH7885TRPBF

Infineon Technologies

MOSFET N-CH 80V 22A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.6V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2311pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
• Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PQFN (5x6)
• Package / Case: 8-VQFN

pacchetto: 8-VQFN

IRFZ46NSTRRPBF

Infineon Technologies

MOSFET N-CH 55V 53A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1696pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
• Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 28A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AUIRF1405ZSTRL

Infineon Technologies

MOSFET N-CH 55V 150A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPA126N10N3GXKSA1

Infineon Technologies

MOSFET N-CH 100V 35A TO220-FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 45µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 33W (Tc)
• Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 35A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-FP
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

IPA80R900P7XKSA1

Infineon Technologies

MOSFET N-CH 800V COOLMOS TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 110µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 500V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 26W (Tc)
• Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220 Full Pack
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

IPA60R600P6

Infineon Technologies

MOSFET N-CH 600V 4.9A TO220-FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 557pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 28W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-FP
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

AUIRFR5305TRL

Infineon Technologies

MOSFET P-CH 55V 31A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

BCP54E6327HTSA1

Infineon Technologies

TRANS NPN 45V 1A SOT-223

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
• Power - Max: 2W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

pacchetto: TO-261-4, TO-261AA

BCR555E6433HTMA1

Infineon Technologies

TRANS PREBIAS PNP 300MW SOT23-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 150MHz
• Power - Max: 330mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

BFP 720FESD E6327

Infineon Technologies

TRANS RF NPN 45GHZ 4.7V TSFP4

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 4.7V
• Frequency - Transition: 45GHz
• Noise Figure (dB Typ @ f): 0.5dB ~ 1.3dB @ 150MHz ~ 10GHz
• Gain: 10dB ~ 29dB
• Power - Max: 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Leads
• Supplier Device Package: 4-TSFP

pacchetto: 4-SMD, Flat Leads

TLF4277ELXUMA1

Infineon Technologies

IC PWR SPLY MONITR/OVRVLT 14SSOP

• Applications: Power Supply Monitor, Overvoltage Protection
• Voltage - Input: -
• Voltage - Supply: -
• Current - Supply: -
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-SSOP-14-EP

pacchetto: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad

BTS410E2E3062ABUMA1

Infineon Technologies

IC HIGH SIDE PWR SWITCH T0263-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 4.7 V ~ 42 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.6A
• Rds On (Typ): 190 mOhm
• Input Type: -
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
• Supplier Device Package: PG-TO263-5-2

pacchetto: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

IR22381QPBF

Infineon Technologies

IC IGBT DRIVER 3PHASE 64-MQFP

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT
• Voltage - Supply: 12.5 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2V
• Current - Peak Output (Source, Sink): 350mA, 540mA
• Input Type: Inverting, Non-Inverting
• High Side Voltage - Max (Bootstrap): 1200V
• Rise / Fall Time (Typ): 80ns, 25ns
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 64-BQFP
• Supplier Device Package: 64-MQFP (20x14)

pacchetto: 64-BQFP

IR2131SPBF

Infineon Technologies

IC DRIVER BRIDGE 3-PHASE 28-SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.2V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 40ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 28-SOIC

pacchetto: 28-SOIC (0.295", 7.50mm Width)

C165L25MHAFXUMA1

Infineon Technologies

IC MCU 16BIT ROMLESS 100MQFP

• Core Processor: C166
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: EBI/EMI, SPI, UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 77
• Program Memory Size: -
• Program Memory Type: ROMless
• EEPROM Size: -
• RAM Size: 2K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: -
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 100-BQFP
• Supplier Device Package: 100-MQFP (14x20)

pacchetto: 100-BQFP

BTS3205GXUMA1

Infineon Technologies

IC SWITCH PWR LOSIDE 8DSO

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 10V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 350mA
• Rds On (Typ): 700 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

pacchetto: 8-SOIC (0.154", 3.90mm Width)

IPB043N10NF2SATMA1

Infineon Technologies

AUTOMOTIVE MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 135A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 93µA
• Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
• Rds On (Max) @ Id, Vgs: 4.35mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

CYAT81655-64AA48

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C, SPI
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

pacchetto: -

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IMZA75R140M1HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-4
• Package / Case: TO-247-4

pacchetto: -

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FP50R12W2T7PB11BPSA1

Infineon Technologies

LOW POWER EASY AG-EASY2B-2

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 50 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): 8 µA
• Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY2B

pacchetto: -

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IPP90R500C3

Infineon Technologies

MOSFET N-CH 900V 11A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900 V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 740µA
• Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 156W (Tc)
• Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

pacchetto: -

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BB814E7801GR1HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

• Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
• Capacitance Ratio: 2.25
• Capacitance Ratio Condition: C2/C8
• Voltage - Peak Reverse (Max): 18 V
• Diode Type: 1 Pair Common Cathode
• Q @ Vr, F: 200 @ 2V, 100MHz
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3-1

pacchetto: -

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IPP60R950C6XKSA1

Infineon Technologies

MOSFET N-CH 600V 4.4A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 130µA
• Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 37W (Tc)
• Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

pacchetto: -

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S6J334EHEESE20000

Infineon Technologies

TRAVEO-40NM

• Core Processor: ARM® Cortex®-R5F
• Core Size: 32-Bit
• Speed: 240MHz
• Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
• Peripherals: DMA, I2S, LVD, POR, PWM, WDT
• Number of I/O: 116
• Program Memory Size: 4.16MB (4.16M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 112K x 8
• RAM Size: 544K x 8
• Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
• Data Converters: A/D 35x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 144-LQFP Exposed Pad
• Supplier Device Package: 144-TEQFP (20x20)

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CYT2BL4CAAQ0AZSGS

Infineon Technologies

IC MCU 32BIT 4.063MB FLSH 80LQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 160MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
• Number of I/O: 63
• Program Memory Size: 4.063MB (4.063M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 512K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 52x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 80-LQFP
• Supplier Device Package: 80-LQFP (12x12)

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IPW65R110CFDFKSA2

Infineon Technologies

MOSFET N-CH 650V 31.2A TO247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
• Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 277.8W (Tc)
• Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3-41
• Package / Case: TO-247-3

pacchetto: -

CY8C4046LQI-T412

Infineon Technologies

CONSUMER / IOT MCUS

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, Microwire, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
• Number of I/O: 19
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: -
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-UFQFN Exposed Pad
• Supplier Device Package: 24-QFN (4x4)

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CYT2BL7BAAQ0AZSGS

Infineon Technologies

IC MCU 32BT 4.063MB FLSH 144LQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 160MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
• Number of I/O: 122
• Program Memory Size: 4.063MB (4.063M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 512K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 72x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 144-LQFP
• Supplier Device Package: 144-LQFP (20x20)

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