Prodotti Infineon Technologies - Transistor - JFET

Immagine	Numero di parte	Produttore	Descrizione	pacchetto	Azione	Quantità	Voltage - Breakdown (V(BR)GSS)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Resistance - RDS(On)	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
	IJW120R100T1FKSA1	Infineon Technologies	JFET N-CHAN 26A TO247-3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 1200V Current - Drain (Idss) @ Vds (Vgs=0): 1.5µA @ 1200V Current Drain (Id) - Max: 26A Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 19.5V (VGS) Resistance - RDS(On): 100 mOhm Power - Max: 190W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	pacchetto: TO-247-3	Azione3.424		-	1200V	1.5µA @ 1200V	26A	-	1550pF @ 19.5V (VGS)	100 mOhm	190W	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
	IJW120R070T1FKSA1	Infineon Technologies	JFET N-CHAN 35A TO247-3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 1200V Current - Drain (Idss) @ Vds (Vgs=0): 3.3µA @ 1200V Current Drain (Id) - Max: 35A Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 19.5V (VGS) Resistance - RDS(On): 70 mOhm Power - Max: 238W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	pacchetto: TO-247-3	Azione6.912		-	1200V	3.3µA @ 1200V	35A	-	2000pF @ 19.5V (VGS)	70 mOhm	238W	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3