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Prodotti Infineon Technologies - Transistor - FET, MOSFET - Singoli

Record 8.381
Pagina  294/300
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRFR7446PBF
Infineon Technologies

MOSFET N-CH 40V 56A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 98W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 56A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione120.012
MOSFET (Metal Oxide)
40V
56A (Tc)
6V, 10V
3.9V @ 100µA
130nC @ 10V
3150pF @ 25V
±20V
-
98W (Tc)
3.9 mOhm @ 56A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
IRFS7434-7PPBF
Infineon Technologies

MOSFET N-CH 40V 240A D2PAK-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 315nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10250pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 245W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
pacchetto: TO-263-7, D2Pak (6 Leads + Tab)
Azione7.136
MOSFET (Metal Oxide)
40V
240A (Tc)
6V, 10V
3.9V @ 250µA
315nC @ 10V
10250pF @ 25V
±20V
-
245W (Tc)
1 mOhm @ 100A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7, D2Pak (6 Leads + Tab)
hot IRLR7843CTRPBF
Infineon Technologies

MOSFET N-CH 30V 161A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione60.480
MOSFET (Metal Oxide)
30V
161A (Tc)
4.5V, 10V
2.3V @ 250µA
50nC @ 4.5V
4380pF @ 15V
±20V
-
140W (Tc)
3.3 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
IRLMS2002GTRPBF
Infineon Technologies

MOSFET N-CH 20V 6.5A 6TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro6?(SOT23-6)
  • Package / Case: SOT-23-6
pacchetto: SOT-23-6
Azione4.448
MOSFET (Metal Oxide)
20V
6.5A (Ta)
2.5V, 4.5V
1.2V @ 250µA
22nC @ 5V
1310pF @ 15V
±12V
-
2W (Ta)
30 mOhm @ 6.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
Micro6?(SOT23-6)
SOT-23-6
hot IRLH5036TRPBF
Infineon Technologies

MOSFET N-CH 60V 100A 8-PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (5x6)
  • Package / Case: 8-PowerVDFN
pacchetto: 8-PowerVDFN
Azione36.000
MOSFET (Metal Oxide)
60V
20A (Ta), 100A (Tc)
4.5V, 10V
2.5V @ 150µA
90nC @ 10V
5360pF @ 25V
±16V
-
3.6W (Ta), 160W (Tc)
4.4 mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PQFN (5x6)
8-PowerVDFN
IRF8308MTR1PBF
Infineon Technologies

MOSFET N-CH 30V 27A MX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4404pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 27A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
pacchetto: DirectFET? Isometric MX
Azione4.384
MOSFET (Metal Oxide)
30V
27A (Ta), 150A (Tc)
4.5V, 10V
2.35V @ 100µA
42nC @ 4.5V
4404pF @ 15V
±20V
-
2.8W (Ta), 89W (Tc)
2.5 mOhm @ 27A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MX
DirectFET? Isometric MX
IRF8304MTR1PBF
Infineon Technologies

MOSFET N-CH 30V 28A MX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 28A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
pacchetto: DirectFET? Isometric MX
Azione3.008
MOSFET (Metal Oxide)
30V
28A (Ta), 170A (Tc)
4.5V, 10V
2.35V @ 100µA
42nC @ 4.5V
4700pF @ 15V
±20V
-
2.8W (Ta), 100W (Tc)
2.2 mOhm @ 28A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MX
DirectFET? Isometric MX
IRF8302MTR1PBF
Infineon Technologies

MOSFET N CH 30V 31A MX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 190A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6030pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 31A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
pacchetto: DirectFET? Isometric MX
Azione6.160
MOSFET (Metal Oxide)
30V
31A (Ta), 190A (Tc)
4.5V, 10V
2.35V @ 150µA
53nC @ 4.5V
6030pF @ 15V
±20V
-
2.8W (Ta), 104W (Tc)
1.8 mOhm @ 31A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MX
DirectFET? Isometric MX
IRF6893MTR1PBF
Infineon Technologies

MOSFET N-CH 25V 29A MX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 168A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 13V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 29A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
pacchetto: DirectFET? Isometric MX
Azione3.536
MOSFET (Metal Oxide)
25V
29A (Ta), 168A (Tc)
4.5V, 10V
2.1V @ 100µA
38nC @ 4.5V
3480pF @ 13V
±16V
-
2.1W (Ta), 69W (Tc)
1.6 mOhm @ 29A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MX
DirectFET? Isometric MX
IRF6892STR1PBF
Infineon Technologies

MOSFET N-CH 25V 28A S3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 125A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2510pF @ 13V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 28A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? S3C
  • Package / Case: DirectFET? Isometric S3C
pacchetto: DirectFET? Isometric S3C
Azione5.712
MOSFET (Metal Oxide)
25V
28A (Ta), 125A (Tc)
4.5V, 10V
2.1V @ 50µA
25nC @ 4.5V
2510pF @ 13V
±16V
-
2.1W (Ta), 42W (Tc)
1.7 mOhm @ 28A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? S3C
DirectFET? Isometric S3C
IRF6810STR1PBF
Infineon Technologies

MOSFET N CH 25V 16A S1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1038pF @ 13V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 16A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET S1
  • Package / Case: DirectFET? Isometric S1
pacchetto: DirectFET? Isometric S1
Azione3.008
MOSFET (Metal Oxide)
25V
16A (Ta), 50A (Tc)
4.5V, 10V
2.1V @ 25µA
11nC @ 4.5V
1038pF @ 13V
±16V
-
2.1W (Ta), 20W (Tc)
5.2 mOhm @ 16A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET S1
DirectFET? Isometric S1
IRF6728MTR1PBF
Infineon Technologies

MOSFET N-CH 30V 23A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4110pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 23A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
pacchetto: DirectFET? Isometric MX
Azione5.008
MOSFET (Metal Oxide)
30V
23A (Ta), 140A (Tc)
4.5V, 10V
2.35V @ 100µA
42nC @ 4.5V
4110pF @ 15V
±20V
-
2.1W (Ta), 75W (Tc)
2.5 mOhm @ 23A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MX
DirectFET? Isometric MX
IPU60R950C6BKMA1
Infineon Technologies

MOSFET N-CH 600V 4.4A TO-251

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione7.760
MOSFET (Metal Oxide)
600V
4.4A (Tc)
10V
3.5V @ 130µA
1.5nC @ 10V
280pF @ 100V
±20V
-
37W (Tc)
950 mOhm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPak, TO-251AA
IPU60R2K0C6BKMA1
Infineon Technologies

MOSFET N-CH 600V 2.4A TO-251

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 22.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 760mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione2.928
MOSFET (Metal Oxide)
600V
2.4A (Tc)
10V
3.5V @ 60µA
6.7nC @ 10V
140pF @ 100V
±20V
-
22.3W (Tc)
2 Ohm @ 760mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPak, TO-251AA
IRF8327STR1PBF
Infineon Technologies

MOSFET N-CH 30V 14A SQ

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 14A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? SQ
  • Package / Case: DirectFET? Isometric SQ
pacchetto: DirectFET? Isometric SQ
Azione2.528
MOSFET (Metal Oxide)
30V
14A (Ta), 60A (Tc)
4.5V, 10V
2.4V @ 25µA
14nC @ 4.5V
1430pF @ 15V
±20V
-
2.2W (Ta), 42W (Tc)
7.3 mOhm @ 14A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? SQ
DirectFET? Isometric SQ
hot IPD60R600P6
Infineon Technologies

MOSFET N-CH 600V 7.3A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 557pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione6.976
MOSFET (Metal Oxide)
600V
7.3A (Tc)
10V
-
12nC @ 10V
557pF @ 100V
±20V
-
63W (Tc)
600 mOhm @ 2.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
IPU50R950CE
Infineon Technologies

MOSFET N-CH 500V 4.3A TO251

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 34W (Tc)
  • Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.2A, 13V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione7.696
MOSFET (Metal Oxide)
500V
4.3A (Tc)
13V
3.5V @ 100µA
10.5nC @ 10V
231pF @ 100V
±20V
-
34W (Tc)
950 mOhm @ 1.2A, 13V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPak, TO-251AA
IRFHM4234TRPBF
Infineon Technologies

MOSFET N-CH 25V 20A PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1011pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: 8-TQFN Exposed Pad
pacchetto: 8-TQFN Exposed Pad
Azione4.784
MOSFET (Metal Oxide)
25V
20A (Ta)
4.5V, 10V
2.1V @ 25µA
17nC @ 10V
1011pF @ 13V
±20V
-
2.8W (Ta), 28W (Tc)
4.4 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
-
8-TQFN Exposed Pad
IRFHM4226TRPBF
Infineon Technologies

MOSFET N CH 25V 28A PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: 8-TQFN Exposed Pad
pacchetto: 8-TQFN Exposed Pad
Azione5.312
MOSFET (Metal Oxide)
25V
28A (Ta)
4.5V, 10V
2.1V @ 50µA
32nC @ 10V
2000pF @ 13V
±20V
-
2.7W (Ta), 39W (Tc)
2.2 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
-
8-TQFN Exposed Pad
hot IRFH4234TRPBF
Infineon Technologies

MOSFET N-CH 25V 22A PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1011pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 27W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 30A
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (5x6)
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione5.360
MOSFET (Metal Oxide)
25V
22A (Ta)
4.5V, 10V
2.1V @ 25µA
17nC @ 10V
1011pF @ 13V
±20V
-
3.5W (Ta), 27W (Tc)
4.6 mOhm @ 30A
-55°C ~ 150°C (TJ)
Surface Mount
PQFN (5x6)
8-PowerTDFN
IRFH4213TRPBF
Infineon Technologies

MOSFET N-CH 25V 41A 8PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3420pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (5x6)
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione5.760
MOSFET (Metal Oxide)
25V
41A (Ta)
4.5V, 10V
2.1V @ 100µA
54nC @ 10V
3420pF @ 13V
±20V
-
3.6W (Ta), 89W (Tc)
1.35 mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PQFN (5x6)
8-PowerTDFN
IRFH4213DTRPBF
Infineon Technologies

MOSFET N-CH 25V 40A 8PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3520pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (5x6)
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione7.344
MOSFET (Metal Oxide)
25V
40A (Ta)
4.5V, 10V
2.1V @ 100µA
55nC @ 10V
3520pF @ 13V
±20V
-
3.6W (Ta), 96W (Tc)
1.35 mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PQFN (5x6)
8-PowerTDFN
hot IRFH4210TRPBF
Infineon Technologies

MOSFET N-CH 25V 45A 8PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4812pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (5x6)
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione6.976
MOSFET (Metal Oxide)
25V
45A (Ta)
4.5V, 10V
2.1V @ 100µA
74nC @ 10V
4812pF @ 13V
±20V
-
3.6W (Ta), 104W (Tc)
1.35 mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PQFN (5x6)
8-PowerTDFN
hot AUIRFR8405
Infineon Technologies

MOSFET N-CH 40V 100A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5171pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 163W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.98 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione5.728
MOSFET (Metal Oxide)
40V
100A (Tc)
10V
3.9V @ 100µA
155nC @ 10V
5171pF @ 25V
±20V
-
163W (Tc)
1.98 mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRFR8403
Infineon Technologies

MOSFET N-CH 40V 100A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3171pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 99W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 76A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione2.816
MOSFET (Metal Oxide)
40V
100A (Tc)
10V
3.9V @ 100µA
99nC @ 10V
3171pF @ 25V
±20V
-
99W (Tc)
3.1 mOhm @ 76A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot AUIRFR8401
Infineon Technologies

MOSFET N-CH 40V 100A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.25 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione5.216
MOSFET (Metal Oxide)
40V
100A (Tc)
10V
3.9V @ 50µA
63nC @ 10V
2200pF @ 25V
±20V
-
79W (Tc)
4.25 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRFS8409
Infineon Technologies

MOSFET N-CH 40V 195A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14240pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione6.448
MOSFET (Metal Oxide)
40V
195A (Tc)
10V
3.9V @ 250µA
450nC @ 10V
14240pF @ 25V
±20V
-
375W (Tc)
1.2 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRFS8408-7P
Infineon Technologies

MOSFET N-CH 40V 240A D2PAK-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 315nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10250pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 294W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione7.168
MOSFET (Metal Oxide)
40V
240A (Tc)
10V
3.9V @ 250µA
315nC @ 10V
10250pF @ 25V
±20V
-
294W (Tc)
1 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB