Pagina 13 - Prodotti Infineon Technologies - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti Infineon Technologies - Transistor - FET, MOSFET - Singoli

Record 8.381
Pagina  13/300
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPB65R099CFD7AATMA1
Infineon Technologies

MOSFET N-CH 650V 24A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 630µA
  • Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 127W (Tc)
  • Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
4.5V @ 630µA
53 nC @ 10 V
2513 pF @ 400 V
±20V
-
127W (Tc)
99mOhm @ 12.5A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPW65R110CFDFKSA1
Infineon Technologies

MOSFET N-CH 650V 31.2A TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 277.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-1
  • Package / Case: TO-247-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
650 V
31.2A (Tc)
10V
4.5V @ 1.3mA
118 nC @ 10 V
3240 pF @ 100 V
±20V
-
277.8W (Tc)
110mOhm @ 12.7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-1
TO-247-3
IPW65R110CFDFKSA2
Infineon Technologies

MOSFET N-CH 650V 31.2A TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 277.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-41
  • Package / Case: TO-247-3
pacchetto: -
Azione624
MOSFET (Metal Oxide)
650 V
31.2A (Tc)
10V
4.5V @ 1.3mA
118 nC @ 10 V
3240 pF @ 100 V
±20V
-
277.8W (Tc)
110mOhm @ 12.7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
IPDQ65R125CFD7XTMA1
Infineon Technologies

HIGH POWER_NEW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 390µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-22-1
  • Package / Case: 22-PowerBSOP Module
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
4.5V @ 390µA
32 nC @ 10 V
1566 pF @ 400 V
±20V
-
160W (Tc)
125mOhm @ 7.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-HDSOP-22-1
22-PowerBSOP Module
DF17MR12W1M1HFB68BPSA1
Infineon Technologies

LOW POWER EASY

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 5.15V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 800 V
  • Vgs (Max): +20V, -7V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: -
  • Package / Case: Module
pacchetto: -
Azione27
SiCFET (Silicon Carbide)
1200 V
45A (Tj)
15V, 18V
5.15V @ 20mA
149 nC @ 18 V
4400 pF @ 800 V
+20V, -7V
-
-
16.2mOhm @ 50A, 18V
-40°C ~ 175°C (TJ)
Chassis Mount
-
Module
IPD70N12S311ATMA2
Infineon Technologies

MOSFET_(120V 300V)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 83µA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-11
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
120 V
70A (Tc)
10V
4V @ 83µA
65 nC @ 10 V
4355 pF @ 25 V
±20V
-
125W (Tc)
11.1mOhm @ 70A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-11
TO-252-3, DPAK (2 Leads + Tab), SC-63
BSC014N04LSATMA1
Infineon Technologies

MOSFET N-CH 40V 32/100A SUPERSO8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSO8
  • Package / Case: 8-PowerTDFN
pacchetto: -
Azione61.683
MOSFET (Metal Oxide)
40 V
32A (Ta), 100A (Tc)
4.5V, 10V
2V @ 250µA
61 nC @ 10 V
4300 pF @ 20 V
±20V
-
2.5W (Ta), 96W (Tc)
1.4mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSO8
8-PowerTDFN
IPF05N03LAG
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-23
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
25 V
50A (Tc)
4.5V, 10V
2V @ 50µA
25 nC @ 5 V
3110 pF @ 15 V
±20V
-
94W (Tc)
5.1mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-23
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD06P005NATMA1
Infineon Technologies

MOSFET P-CH 60V 6.5A TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
60 V
6.5A (Tc)
10V
4V @ 270µA
10.6 nC @ 10 V
420 pF @ 30 V
±20V
-
28W (Tc)
250mOhm @ 6.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
BSC014N03LSGATMA1
Infineon Technologies

MOSFET N-CH 30V 34A/100A TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-1
  • Package / Case: 8-PowerTDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
30 V
34A (Ta), 100A (Tc)
4.5V, 10V
2.2V @ 250µA
131 nC @ 10 V
10000 pF @ 15 V
±20V
-
2.5W (Ta), 139W (Tc)
1.4mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
IPW65R045C7300XKSA1
Infineon Technologies

MOSFET N-CH 650V 46A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.25mA
  • Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
650 V
46A (Tc)
10V
4V @ 1.25mA
93 nC @ 10 V
4340 pF @ 400 V
±20V
-
227W (Tc)
45mOhm @ 24.9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
IPL65R200CFD7AUMA1
Infineon Technologies

COOLMOS CFD7 SUPERJUNCTION MOSFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 260µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 81W (Tc)
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 5.2A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-VSON-4
  • Package / Case: 4-PowerTSFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
650 V
14A (Tc)
10V
4.5V @ 260µA
23 nC @ 10 V
1044 pF @ 400 V
±20V
-
81W (Tc)
200mOhm @ 5.2A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-VSON-4
4-PowerTSFN
BSC096N10LS5ATMA1
Infineon Technologies

MOSFET N-CH 100V 40A TDSON-8-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 36µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-6
  • Package / Case: 8-PowerTDFN
pacchetto: -
Azione25.755
MOSFET (Metal Oxide)
100 V
40A (Tc)
4.5V, 10V
2.3V @ 36µA
14.6 nC @ 4.5 V
2100 pF @ 50 V
±20V
-
3W (Ta), 83W (Tc)
9.6mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
IAUCN04S7N009ATMA1
Infineon Technologies

MOSFET_(20V 40V)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 175A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-34
  • Package / Case: 8-PowerTDFN
pacchetto: -
Azione3.000
MOSFET (Metal Oxide)
40 V
175A
10V
-
-
-
-
-
-
-
-55°C ~ 175°C
Surface Mount
PG-TDSON-8-34
8-PowerTDFN
BSO301SPHXUMA1
Infineon Technologies

MOSFET P-CH 30V 12.6A 8DSO

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.79W (Ta)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-DSO-8
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Azione24.984
MOSFET (Metal Oxide)
30 V
12.6A (Ta)
4.5V, 10V
2V @ 250µA
136 nC @ 10 V
5890 pF @ 25 V
±20V
-
1.79W (Ta)
8mOhm @ 14.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-DSO-8
8-SOIC (0.154", 3.90mm Width)
IPP65R060CFD7XKSA1
Infineon Technologies

650V FET COOLMOS TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 860µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 171W (Tc)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacchetto: -
Azione1.290
MOSFET (Metal Oxide)
650 V
36A (Tc)
10V
4.5V @ 860µA
68 nC @ 10 V
3288 pF @ 400 V
±20V
-
171W (Tc)
60mOhm @ 16.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPT039N15N5ATMA1
Infineon Technologies

OPTIMOS 5 POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4.6V @ 257µA
  • Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8
  • Package / Case: 8-PowerSFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
150 V
21A (Ta), 190A (Tc)
8V, 10V
4.6V @ 257µA
98 nC @ 10 V
7700 pF @ 75 V
±20V
-
3.8W (Ta), 319W (Tc)
3.9mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8
8-PowerSFN
SPB21N50C3ATMA1
Infineon Technologies

MOSFET N-CH 560V 21A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 560 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione8.709
MOSFET (Metal Oxide)
560 V
21A (Tc)
10V
3.9V @ 1mA
95 nC @ 10 V
2400 pF @ 25 V
±20V
-
208W (Tc)
190mOhm @ 13.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPLK70R1K4P7ATMA1
Infineon Technologies

MOSFET N-CH 700V TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
pacchetto: -
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MOSFET (Metal Oxide)
700 V
-
-
-
-
-
-
-
-
-
-
Surface Mount
PG-TDSON-8
8-PowerTDFN
IRFP4368PBFXKMA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75 V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 19230 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.85mOhm @ 195A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
75 V
195A (Tc)
10V
4V @ 250µA
570 nC @ 10 V
19230 pF @ 50 V
±20V
-
520W (Tc)
1.85mOhm @ 195A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
IPA90R340C3XKSA1
Infineon Technologies

MOSFET N-CH 900V 15A TO220-FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
900 V
15A (Tc)
10V
3.5V @ 1mA
94 nC @ 10 V
2400 pF @ 100 V
±20V
-
35W (Tc)
340mOhm @ 9.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
IPA90R340C3XKSA2
Infineon Technologies

MOSFET N-CH 900V 15A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione948
MOSFET (Metal Oxide)
900 V
15A (Tc)
10V
3.5V @ 1mA
94 nC @ 10 V
2400 pF @ 100 V
±20V
-
35W (Tc)
340mOhm @ 9.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
BSB012N03LX3GXUMA1
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPZA60R099P7XKSA1
Infineon Technologies

MOSFET N-CH 600V 31A TO247-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 530µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 117W (Tc)
  • Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4
  • Package / Case: TO-247-4
pacchetto: -
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MOSFET (Metal Oxide)
600 V
31A (Tc)
10V
4V @ 530µA
45 nC @ 10 V
1952 pF @ 400 V
±20V
-
117W (Tc)
99mOhm @ 10.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-4
TO-247-4
IPP60R360CFD7XKSA1
Infineon Technologies

MOSFET 600V TO220-3-1

  • FET Type: -
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
-
-
-
-
-
±20V
-
-
-
-
Through Hole
PG-TO220-3-1
TO-220-3
AUIRFS8408-7TRR
Infineon Technologies

MOSFET N-CH 40V 240A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 294W (Tc)
  • Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-900
  • Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
40 V
240A (Tc)
10V
3.9V @ 250µA
315 nC @ 10 V
10250 pF @ 25 V
±20V
-
294W (Tc)
1mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-900
TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
IPF014N08NF2SATMA1
Infineon Technologies

TRENCH 40<-<100V PG-TO263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 282A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 267µA
  • Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-14
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
pacchetto: -
Azione3.462
MOSFET (Metal Oxide)
80 V
282A (Tc)
6V, 10V
3.8V @ 267µA
255 nC @ 10 V
12000 pF @ 40 V
±20V
-
300W (Tc)
1.4mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-14
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
AUIRF1405-INF
Infineon Technologies

AUTOMOTIVE HEXFET N CHANNEL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
55 V
75A (Tc)
-
4V @ 250µA
260 nC @ 10 V
5480 pF @ 25 V
±20V
-
330W (Tc)
5.3mOhm @ 101A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3