Pagina 9 - Prodotti Infineon Technologies - Diodi - Raddrizzatori - Singoli | Heisener Electronics
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Prodotti Infineon Technologies - Diodi - Raddrizzatori - Singoli

Record 805
Pagina  9/29
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
D450S20TXPSA1
Infineon Technologies

DIODE GEN PURP 2KV 443A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 443A
  • Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 6.2 µs
  • Current - Reverse Leakage @ Vr: 10 mA @ 2000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -25°C ~ 180°C
pacchetto: -
Request a Quote
2000 V
443A
2.25 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
6.2 µs
10 mA @ 2000 V
-
Clamp On
DO-200AA, A-PUK
-
-25°C ~ 180°C
GLHUELSE1627XPSA1
Infineon Technologies

DUMMY 57

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SIDC14D120H8X1SA1
Infineon Technologies

DIODE GP 1.2KV 25A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 25 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: -
Request a Quote
1200 V
25A
1.97 V @ 25 A
Standard Recovery >500ns, > 200mA (Io)
-
20 µA @ 1200 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
IDK08G120C5XTMA1
Infineon Technologies

DIODE SIC 1.2KV 22.8A TO263-1

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 22.8A
  • Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
  • Capacitance @ Vr, F: 365pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione1.548
1200 V
22.8A
1.95 V @ 8 A
No Recovery Time > 500mA (Io)
-
40 µA @ 1200 V
365pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-2-1
-55°C ~ 175°C
IDD09SG60CXTMA2
Infineon Technologies

DIODE SIL CARB 600V 9A TO252-3

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 9A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 80 µA @ 600 V
  • Capacitance @ Vr, F: 280pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
600 V
9A
2.1 V @ 9 A
No Recovery Time > 500mA (Io)
0 ns
80 µA @ 600 V
280pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
IDWD10G120C5XKSA1
Infineon Technologies

DIODE SIL CARB 1.2KV 34A TO247-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 34A
  • Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
  • Capacitance @ Vr, F: 730pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: PG-TO247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
1200 V
34A
1.65 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
80 µA @ 1200 V
730pF @ 1V, 1MHz
Through Hole
TO-247-2
PG-TO247-2
-55°C ~ 175°C
AIDW40S65C5XKSA1
Infineon Technologies

DIODE SIL CARB 650V 40A TO247-3

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 120 µA @ 650 V
  • Capacitance @ Vr, F: 1138pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-41
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: -
Azione789
650 V
40A
1.7 V @ 40 A
No Recovery Time > 500mA (Io)
0 ns
120 µA @ 650 V
1138pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3-41
-40°C ~ 175°C
SIDC81D120H8X1SA3
Infineon Technologies

DIODE GEN PURP 1.2KV 150A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 150 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: -
Request a Quote
1200 V
150A
2.15 V @ 150 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1200 V
-
-
-
-
-40°C ~ 175°C
IDDD04G65C6XTMA1
Infineon Technologies

DIODE SIL CARB 650V 13A HDSOP-10

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 13A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 14 µA @ 420 V
  • Capacitance @ Vr, F: 205pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 10-PowerSOP Module
  • Supplier Device Package: PG-HDSOP-10-1
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione14.805
650 V
13A
-
No Recovery Time > 500mA (Io)
0 ns
14 µA @ 420 V
205pF @ 1V, 1MHz
Surface Mount
10-PowerSOP Module
PG-HDSOP-10-1
-55°C ~ 175°C
BAT54WE6327
Infineon Technologies

DIODE SCHOTT 30V 200MA SOT323-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
  • Operating Temperature - Junction: 150°C
pacchetto: -
Request a Quote
30 V
200mA
800 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
2 µA @ 25 V
10pF @ 1V, 1MHz
Surface Mount
SC-70, SOT-323
PG-SOT323-3
150°C
SIDC06D60E6X7SA1
Infineon Technologies

DIODE GEN PURP 600V 10A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
600 V
10A
1.25 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-55°C ~ 150°C
DZ435N40KHPSA1
Infineon Technologies

DIODE GEN PURP 4KV 700A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4000 V
  • Current - Average Rectified (Io): 700A
  • Voltage - Forward (Vf) (Max) @ If: 1.71 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 4000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: -
Azione9
4000 V
700A
1.71 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 4000 V
-
Chassis Mount
Module
Module
-40°C ~ 150°C
38DN06B02ELEMXPSA1
Infineon Technologies

DIODE GP 600V 5140A D-ELEM-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5140A
  • Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: BG-D-ELEM-1
  • Operating Temperature - Junction: 180°C (Max)
pacchetto: -
Azione54
600 V
5140A
960 mV @ 4500 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 600 V
-
Clamp On
DO-200AC, K-PUK
BG-D-ELEM-1
180°C (Max)
SIDC06D65C8X1SA1
Infineon Technologies

DIODE GEN PURP 650V 20A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 20 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 240 nA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: -
Request a Quote
650 V
20A
1.87 V @ 20 A
Standard Recovery >500ns, > 200mA (Io)
-
240 nA @ 650 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
IDWD100E120D7XKSA1
Infineon Technologies

INDUSTRY 14

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Azione720
-
-
-
-
-
-
-
-
-
-
-
D1800N36TVFXPSA1
Infineon Technologies

DIODE GEN PURP 3.6KV 1800A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3600 V
  • Current - Average Rectified (Io): 1800A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
pacchetto: -
Request a Quote
3600 V
1800A
1.32 V @ 1500 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 3600 V
-
Clamp On
DO-200AC, K-PUK
-
-40°C ~ 160°C
SIDC06D120H8X1SA2
Infineon Technologies

DIODE GP 1.2KV 7.5A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: -
Request a Quote
1200 V
7.5A
1.97 V @ 7.5 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1200 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
D740N46TXPSA1
Infineon Technologies

DIODE GEN PURP 4.6KV 750A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4600 V
  • Current - Average Rectified (Io): 750A
  • Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 700 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 70 mA @ 4600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
pacchetto: -
Request a Quote
4600 V
750A
1.45 V @ 700 A
Standard Recovery >500ns, > 200mA (Io)
-
70 mA @ 4600 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 160°C
D931SH65TXPSA1
Infineon Technologies

DIODE GEN PURP 6.5KV 1220A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6500 V
  • Current - Average Rectified (Io): 1220A
  • Voltage - Forward (Vf) (Max) @ If: 5.6 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 6500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: -
  • Operating Temperature - Junction: 0°C ~ 140°C
pacchetto: -
Request a Quote
6500 V
1220A
5.6 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 6500 V
-
Chassis Mount
DO-200AD
-
0°C ~ 140°C
D1800N44TVFXPSA1
Infineon Technologies

DIODE GEN PURP 4.4KV 1800A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4400 V
  • Current - Average Rectified (Io): 1800A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 4400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
pacchetto: -
Request a Quote
4400 V
1800A
1.32 V @ 1500 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 4400 V
-
Clamp On
DO-200AC, K-PUK
-
-40°C ~ 160°C
SIDC03D120H6X1SA3
Infineon Technologies

DIODE GP 1.2KV 3A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
1200 V
3A
1.6 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1200 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
GATELEADWHRD394XXPSA1
Infineon Technologies

STD THYR/DIODEN DISC

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
IDT02S60C
Infineon Technologies

DIODE SIL CARB 600V 3A TO220-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 3 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 15 µA @ 600 V
  • Capacitance @ Vr, F: 60pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
600 V
3A
2.4 V @ 3 A
No Recovery Time > 500mA (Io)
0 ns
15 µA @ 600 V
60pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
D1481N62TXPSA1
Infineon Technologies

DIODE GEN PURP 6.2KV 2200A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6200 V
  • Current - Average Rectified (Io): 2200A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 6200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
pacchetto: -
Request a Quote
6200 V
2200A
1.8 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 6200 V
-
Clamp On
DO-200AC, K-PUK
-
-40°C ~ 160°C
ND171N16KHPSA1
Infineon Technologies

DIODE GEN PURP 1.6KV 171A PB34-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 171A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB34-1
  • Operating Temperature - Junction: -40°C ~ 135°C
pacchetto: -
Request a Quote
1600 V
171A
-
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1600 V
-
Chassis Mount
Module
BG-PB34-1
-40°C ~ 135°C
ND171N16KHPSA2
Infineon Technologies

DIODE GEN PURP 1.6KV 171A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 171A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
  • Operating Temperature - Junction: 150°C
pacchetto: -
Request a Quote
1600 V
171A
1.26 V @ 500 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1600 V
-
Chassis Mount
Module
-
150°C
IDWD75E65E7XKSA1
Infineon Technologies

INDUSTRY 14

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: PG-TO247-2-2
  • Operating Temperature - Junction: -
pacchetto: -
Azione720
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-
-
-
-
-
-
Through Hole
TO-247-2
PG-TO247-2-2
-
D371S45TXPSA1
Infineon Technologies

DIODE GEN PURP 4.5KV 510A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 510A
  • Voltage - Forward (Vf) (Max) @ If: 3.9 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 125°C
pacchetto: -
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4500 V
510A
3.9 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 4500 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 125°C