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Prodotti Global Power Technologies Group

Record 373
Pagina  4/13
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pacchetto
Azione
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GPA040A120L-FD
Global Power Technologies Group

IGBT 1200V 80A 480W TO264

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
  • Power - Max: 480W
  • Switching Energy: 5.3mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 480nC
  • Td (on/off) @ 25°C: 55ns/200ns
  • Test Condition: 600V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 200ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
pacchetto: TO-264-3, TO-264AA
Azione25.218
GSID100A120T2P2
Global Power Technologies Group

SILICON IGBT MODULES

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 710W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 13.7nF @ 25V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: Module
Azione4.288
GSID150A120S3B1
Global Power Technologies Group

SILICON IGBT MODULES

  • IGBT Type: -
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 300A
  • Power - Max: 940W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 14nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: D-3 Module
  • Supplier Device Package: D3
pacchetto: D-3 Module
Azione2.928
GSID200A120S5C1
Global Power Technologies Group

IGBT MODULE 1200V 335A

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 335A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 22.4nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: Module
Azione5.456
GHIS060A120S-A1
Global Power Technologies Group

IGBT BOOST CHP 1200V 120A SOT227

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 120A
  • Power - Max: 680W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
  • Current - Collector Cutoff (Max): 2mA
  • Input Capacitance (Cies) @ Vce: 8nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione6.800
GHIS080A060S-A1
Global Power Technologies Group

IGBT BOOST CHOP 600V 160A SOT227

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 160A
  • Power - Max: 380W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A
  • Current - Collector Cutoff (Max): 2mA
  • Input Capacitance (Cies) @ Vce: 5.44nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione5.152
GP2M020A050H
Global Power Technologies Group

MOSFET N-CH 500V 18A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 290W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione7.648
GP2M013A050F
Global Power Technologies Group

MOSFET N-CH 500V 13A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1798pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione5.216
GP1M013A050H
Global Power Technologies Group

MOSFET N-CH 500V 13A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1918pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 183W (Tc)
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione7.264
GP1M008A050CG
Global Power Technologies Group

MOSFET N-CH 500V 8A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 937pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione6.624
GP1M005A050HS
Global Power Technologies Group

MOSFET N-CH 500V 4A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 602pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 92.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.85 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione6.144
GP2M023A050N
Global Power Technologies Group

MOSFET N-CH 500V 23A TO3PN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3270pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 347W (Tc)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: TO-3P-3, SC-65-3
Azione3.120
GP2M004A065CG
Global Power Technologies Group

MOSFET N-CH 650V 4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 98.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione7.664
GP1M018A020FG
Global Power Technologies Group

MOSFET N-CH 200V 18A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 170 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione4.160
GP1M018A020CG
Global Power Technologies Group

MOSFET N-CH 200V 18A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 170 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione5.248
GP1M015A050H
Global Power Technologies Group

MOSFET N-CH 500V 14A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2263pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 231W (Tc)
  • Rds On (Max) @ Id, Vgs: 440 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione4.192
GDP30S120B
Global Power Technologies Group

DIODE SCHOTTKY 1.2KV 30A TO247-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 30A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: 1790pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 135°C
pacchetto: TO-247-2
Azione3.840
GDP06S060D
Global Power Technologies Group

DIODE SCHOTTKY 600V 6A TO263-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: 243pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263-2
  • Operating Temperature - Junction: -55°C ~ 135°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione5.968
GP2D030A060B
Global Power Technologies Group

DIODE SCHOTTKY 600V 30A TO247-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 30A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: 1581pF @ 1V, 1MHZ
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-2
Azione6.168
GDP24D060B
Global Power Technologies Group

DIODE SCHOTTKY 600V 12A TO247-3

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 12A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Operating Temperature - Junction: -55°C ~ 135°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
pacchetto: TO-247-3
Azione7.600
GHXS010A060S-D4
Global Power Technologies Group

DIODE SBD SCHOTT 600V 10A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione4.848
GHXS050A060S-D4
Global Power Technologies Group

DIODE SCHOTT SBD 600V 50A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione6.368
GSXF060A120S1-D3
Global Power Technologies Group

DIODE FAST REC 1200V 60A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2.35V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 90ns
  • Current - Reverse Leakage @ Vr: 25µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione6.720
GSXF100A100S1-D3
Global Power Technologies Group

DIODE FAST REC 1000V 100A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 2.35V @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 125ns
  • Current - Reverse Leakage @ Vr: 25µA @ 1000V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione5.088
GSXD060A020S1-D3
Global Power Technologies Group

DIODE SCHOTTKY 200V 60A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 200V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione6.896
GSXD100A006S1-D3
Global Power Technologies Group

DIODE SCHOTTKY 60V 100A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 60V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione7.776
GSXF120A020S1-D3
Global Power Technologies Group

DIODE FAST REC 200V 120A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 120A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 25µA @ 200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione5.920
GSXD060A015S1-D3
Global Power Technologies Group

DIODE SCHOTTKY 150V 60A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 150V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione5.680
GSXD050A012S1-D3
Global Power Technologies Group

DIODE SCHOTTKY 120V 50A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io) (per Diode): 50A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 50A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 120V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione5.520
GHXS020A060S-D1
Global Power Technologies Group

MOD SBD BRIDGE 600V 20A SOT227

  • Diode Type: Single Phase
  • Technology: Silicon Carbide Schottky
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione2.100