Prodotti Exar Corporation - Transistor - FET, MOSFET - Singoli

Immagine	Numero di parte	Produttore	Descrizione	pacchetto	Azione	Quantità	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
	XR46000ESETR	Exar Corporation	MOSFET N-CH 600V 1.5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 8 Ohm @ 750mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	pacchetto: TO-261-4, TO-261AA	Azione21.600		MOSFET (Metal Oxide)	600V	1.5A (Tc)	10V	4V @ 250µA	7.5nC @ 10V	170pF @ 25V	±30V	-	20W (Tc)	8 Ohm @ 750mA, 10V	150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA