Prodotti Diodes Incorporated

FRBST1061

Diodes Incorporated

OSC VCXO 61.44MHZ CMOS SMD

• Type: VCXO
• Frequency: 61.44MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±50ppm
• Operating Temperature: -40°C ~ 85°C
• Current - Supply (Max): 10mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
• Height - Seated (Max): 0.061" (1.55mm)

pacchetto: 6-SMD, No Lead

2N7002TA

Diodes Incorporated

MOSFET N-CH 60V 115MA SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 330mW (Ta)
• Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

BC847BT-7

Diodes Incorporated

TRANS NPN 45V 0.1A SMD SOT-523

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 150mW
• Frequency - Transition: 100MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: SOT-523

pacchetto: SOT-523

2DD2679-13

Diodes Incorporated

TRANS NPN 30V 2A SOT89-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 370mV @ 75mA, 1.5A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
• Power - Max: 2W
• Frequency - Transition: 240MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

pacchetto: TO-243AA

UF3001

Diodes Incorporated

DIODE GEN PURP 50V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: 75pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-201AD, Axial

SDT8A100P5-7

Diodes Incorporated

SCHOTTKY RECTIFIER PDI5

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: PowerDI? 5
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-277, 3-PowerDFN

RS1BB-13-F

Diodes Incorporated

DIODE GEN PURP 100V 1A SMB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-214AA, SMB

SBR0560S1-7

Diodes Incorporated

DIODE SBR 60V 500MA SOD123

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: SOD-123

AP1086K25L-U

Diodes Incorporated

IC REG LINEAR 2.5V 1.5A TO263-2

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 12V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.4V @ 1.5A
• Current - Output: 1.5A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 60dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263-2

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AP7343D-29FS4-7B

Diodes Incorporated

IC REG LINEAR 2.9V 300MA 4DFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.25V
• Voltage - Output (Min/Fixed): 2.9V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.3V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA
• PSRR: 75dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: X2-DFN1010-4

pacchetto: 4-XDFN Exposed Pad

AP9101DN-AITRG1

Diodes Incorporated

IC BATTERY MANAGER MULTI

• Function: -
• Battery Chemistry: -
• Number of Cells: -
• Fault Protection: -
• Interface: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

74LVC2G14FX4-7

Diodes Incorporated

IC GATE INV DUAL X2-DFN1409-6

• Logic Type: Inverter
• Number of Circuits: 2
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 40µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: 0.25 V ~ 1.2 V
• Logic Level - High: 1.5 V ~ 3.6 V
• Max Propagation Delay @ V, Max CL: 4.7ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN1409-6
• Package / Case: 6-XFDFN

pacchetto: 6-XFDFN

PI3PCIE3415ZHE

Diodes Incorporated

IC MULTIPLEXER PCIE 4CH 42TQFN

• Type: Buffer, Multiplexer
• Applications: PCIe
• Input: -
• Output: -
• Data Rate (Max): 8Gbps
• Number of Channels: 4 x 2:1
• Delay Time: -
• Signal Conditioning: -
• Capacitance - Input: -
• Voltage - Supply: 3.3V
• Current - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: 42-VFQFN Exposed Pad
• Supplier Device Package: 42-TQFN (9x3.5)

pacchetto: 42-VFQFN Exposed Pad

PS8AES02WEX

Diodes Incorporated

PIR CONTROLLER SO-16

• Type: -
• Input Type: -
• Output Type: -
• Interface: -
• Current - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

SMCJ100A-13

Diodes Incorporated

TVS DIODE 100VWM 162VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 100V
• Voltage - Breakdown (Min): 111V
• Voltage - Clamping (Max) @ Ipp: 162V
• Current - Peak Pulse (10/1000µs): 9.3A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC

pacchetto: DO-214AB, SMC

SMCJ15CA-13

Diodes Incorporated

TVS DIODE 15VWM 24.4VC SMC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 15V
• Voltage - Breakdown (Min): 16.7V
• Voltage - Clamping (Max) @ Ipp: 24.4V
• Current - Peak Pulse (10/1000µs): 61.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC

pacchetto: DO-214AB, SMC

MMBZ20VAL-7

Diodes Incorporated

TVS DIODE 17VWM 28VC SOT23-3

• Type: Zener
• Unidirectional Channels: 2
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 17V
• Voltage - Breakdown (Min): 19V
• Voltage - Clamping (Max) @ Ipp: 28V
• Current - Peak Pulse (10/1000µs): 1.4A
• Power - Peak Pulse: 40W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

1.5KE300A-T

Diodes Incorporated

TVS DIODE 256VWM 414VC D0201

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 256V
• Voltage - Breakdown (Min): 285V
• Voltage - Clamping (Max) @ Ipp: 414V
• Current - Peak Pulse (10/1000µs): 5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: DO-201

pacchetto: DO-201AA, DO-27, Axial

1.5KE10A-T

Diodes Incorporated

TVS DIODE 8.55VWM 14.5VC DO201

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 8.55V
• Voltage - Breakdown (Min): 9.5V
• Voltage - Clamping (Max) @ Ipp: 14.5V
• Current - Peak Pulse (10/1000µs): 103A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: DO-201

pacchetto: DO-201AA, DO-27, Axial

AH211Z4-BG1

Diodes Incorporated

MAGNETIC SWITCH LATCH TO94

• Function: Latch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 9mT Trip, -9mT Release
• Test Condition: 25°C
• Voltage - Supply: 3.5 V ~ 16 V
• Current - Supply (Max): 8mA
• Current - Output (Max): 400mA
• Output Type: Open Collector
• Features: Temperature Compensated
• Operating Temperature: -20°C ~ 85°C (TA)
• Package / Case: 4-SIP
• Supplier Device Package: TO-94

pacchetto: 4-SIP

AH175-PG-B-B

Diodes Incorporated

MAGNETIC SWITCH LATCH 3SIP

• Function: Latch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 8mT Trip, -8mT Release
• Test Condition: 25°C
• Voltage - Supply: 3.5 V ~ 20 V
• Current - Supply (Max): 6mA
• Current - Output (Max): 25mA
• Output Type: Open Collector
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 150°C (TA)
• Package / Case: 3-SIP
• Supplier Device Package: 3-SIP

pacchetto: 3-SIP

AH3764Q-P-A

Diodes Incorporated

MAGNETIC SWITCH LATCH 3SIP

• Function: Latch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 6mT Trip, -6mT Release
• Test Condition: -40°C ~ 150°C
• Voltage - Supply: 3 V ~ 28 V
• Current - Supply (Max): 4mA
• Current - Output (Max): 60mA
• Output Type: Open Drain
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 150°C (TA)
• Package / Case: 3-SIP Module
• Supplier Device Package: 3-SIP

pacchetto: 3-SIP Module

PI7C9X760BCLEX

Diodes Incorporated

SPI BRIDGE TSSOP-16 T&R 2.5K

• Protocol: I²C
• Function: Bridge, I²C/SPI to UART
• Interface: UART
• Standards: -
• Voltage - Supply: 1.62 V ~ 3.63 V
• Current - Supply: -
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

pacchetto: 16-TSSOP (0.173", 4.40mm Width)

PI6CB184Q2ZHQEX

Diodes Incorporated

CLOCK BUFFER W-QFN5050-32

• Type: Clock Buffer
• Number of Circuits: 1
• Ratio - Input:Output: 1:4
• Differential - Input:Output: Yes/Yes
• Input: HCSL
• Output: HCSL
• Frequency - Max: 200MHz
• Voltage - Supply: 1.7V ~ 1.9V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 32-WFQFN Exposed Pad
• Supplier Device Package: 32-TQFN (5x5)

pacchetto: 32-WFQFN Exposed Pad

DMN67D8LV-7

Diodes Incorporated

MOSFET BVDSS: 41V 60V SOT563 T&R

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

pacchetto: -

Request a Quote

SDM20N40AQ-7

Diodes Incorporated

SCHOTTKY DIODE SOT23 T&R 3K

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io) (per Diode): 200mA
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 200 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15 µA @ 30 V
• Operating Temperature - Junction: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: -

Request a Quote

1N5406G_HF

Diodes Incorporated

STANDARD RECOVERY RECTIFIER DO-2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2 µs
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: -

Request a Quote

DMP32D9UFO-7B

Diodes Incorporated

MOSFET BVDSS: 25V~30V X2-DFN0604

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 15 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 320mW (Ta)
• Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN0604-3
• Package / Case: 3-XFDFN

pacchetto: -