Prodotti Diodes Incorporated

FN2500157

Diodes Incorporated

OSCILLATOR XO 25.000MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 25MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 2.5V
• Frequency Stability: ±50ppm
• Operating Temperature: -40°C ~ 85°C
• Current - Supply (Max): 15mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
• Height - Seated (Max): 0.071" (1.80mm)

pacchetto: 4-SMD, No Lead

FH4800014

Diodes Incorporated

CRYSTAL 48MHZ 10PF SMD

• Type: MHz Crystal
• Frequency: 48MHz
• Frequency Stability: ±10ppm
• Frequency Tolerance: ±10ppm
• Load Capacitance: 10pF
• ESR (Equivalent Series Resistance): 60 Ohm
• Operating Mode: Fundamental
• Operating Temperature: -30°C ~ 85°C
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
• Height - Seated (Max): 0.028" (0.70mm)

pacchetto: 4-SMD, No Lead

DMG4N60SJ3

Diodes Incorporated

MOSFET NCH 600V 3A TO251

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 532pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 41W (Tc)
• Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-251
• Package / Case: TO-251-3 Long Leads, IPak, TO-251AB

pacchetto: TO-251-3 Long Leads, IPak, TO-251AB

DMT10H015LCG-7

Diodes Incorporated

MOSFET NCH 100V 9.4A 8VDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1871pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 155°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: V-DFN3333-8
• Package / Case: 8-VDFN Exposed Pad

pacchetto: 8-VDFN Exposed Pad

DMC3026LSD-13

Diodes Incorporated

MOSFET N/P-CH 30V 6.5A/6.2A 8SO

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6.5A, 6.2A
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
• Power - Max: 1.2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

ZTX449STZ

Diodes Incorporated

TRANS NPN 30V 1A E-LINE

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
• Power - Max: 1W
• Frequency - Transition: 150MHz
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: E-Line-3, Formed Leads
• Supplier Device Package: E-Line (TO-92 compatible)

pacchetto: E-Line-3, Formed Leads

DXT651-13

Diodes Incorporated

TRANS NPN 60V 3A SOT89-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
• Power - Max: 1W
• Frequency - Transition: 200MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

pacchetto: TO-243AA

ZXTN2018FTA

Diodes Incorporated

TRANS NPN 60V 5A SOT23-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 5A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 210mV @ 300mA, 6A
• Current - Collector Cutoff (Max): 20nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
• Power - Max: 1.2W
• Frequency - Transition: 130MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

DNBT8105-7

Diodes Incorporated

TRANS NPN 60V 1A SOT23-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
• Power - Max: 600mW
• Frequency - Transition: 150MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

SBR8B60P5-7D

Diodes Incorporated

DIODE SBR 60V 5A POWERDI5

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 8A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 220µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI? 5
• Supplier Device Package: PowerDI?5
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: PowerDI? 5

BAS19W-7-F

Diodes Incorporated

DIODE GEN PURP 100V 200MA SOT323

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 100V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: SC-70, SOT-323

SDM20U30-7

Diodes Incorporated

DIODE SCHOTTKY 30V 200MA SOD523

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150µA @ 30V
• Capacitance @ Vr, F: 20pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523
• Operating Temperature - Junction: -65°C ~ 125°C

pacchetto: SC-79, SOD-523

ZSR300N8TA

Diodes Incorporated

IC REG LINEAR 3V 200MA 8SOP

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 20V
• Voltage - Output (Min/Fixed): 3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 600µA
• PSRR: 62dB (120Hz)
• Control Features: -
• Protection Features: Over Temperature, Short Circuit
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.154", 3.90mm Width)

AP7361C-12ER-13

Diodes Incorporated

IC REG LINEAR 1.2V 1A SOT223R-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 1.2V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.7V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 80µA
• PSRR: 75dB ~ 55dB (1kHz ~ 10kHz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223R-3

pacchetto: TO-261-4, TO-261AA

APX803S05-40SA-7

Diodes Incorporated

RESET GENERATOR SOT23

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 20 ms Minimum
• Voltage - Threshold: 4V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

APX803L-21SA-7

Diodes Incorporated

RESET GENERATOR SOT23

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: -
• Voltage - Threshold: 2.1V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

APX810-29SRG-7

Diodes Incorporated

IC MPU RESET CIRC 2.93V SOT23R-3

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active High
• Reset Timeout: 140 ms Minimum
• Voltage - Threshold: 2.93V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT23R

pacchetto: TO-236-3, SC-59, SOT-23-3

TLC27L1BCS-13

Diodes Incorporated

IC OPAMP GENERAL PURPOSE 8-SO

• Amplifier Type: CMOS
• Number of Circuits: 1
• Output Type: -
• Slew Rate: 0.04 V/µs
• Gain Bandwidth Product: 110kHz
• -3db Bandwidth: -
• Current - Input Bias: 0.7pA
• Voltage - Input Offset: 2mV
• Current - Supply: 14µA
• Current - Output / Channel: 30mA
• Voltage - Supply, Single/Dual (±): 3 V ~ 16 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

PI3HDX511AZLEX

Diodes Incorporated

IC LEVEL SHIFTER 32TQFN

• Applications: HDMI Redriver, Level Shifter
• Interface: -
• Voltage - Supply: 3.3V
• Package / Case: -
• Supplier Device Package: -
• Mounting Type: -

pacchetto: -

PI90LV028AWE

Diodes Incorporated

IC DUAL LVDS LINE RECEIVR 8-SOIC

• Type: Receiver
• Protocol: LVDS
• Number of Drivers/Receivers: 0/2
• Duplex: -
• Receiver Hysteresis: -
• Data Rate: 400Mbps
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacchetto: 8-SOIC (0.154", 3.90mm Width)

AH182-PG-B

Diodes Incorporated

MAGNETIC SWITCH UNIPOLAR 3SIP

• Function: Unipolar Switch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 6mT Trip, 1mT Release
• Test Condition: 25°C
• Voltage - Supply: 2.5 V ~ 5.5 V
• Current - Supply (Max): 10µA
• Current - Output (Max): 10mA
• Output Type: Open Drain
• Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 3-SIP
• Supplier Device Package: 3-SIP

pacchetto: 3-SIP

PT7M7812RTAE

Diodes Incorporated

IC SUPERVISOR 2.63V SOT23-5

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active High
• Reset Timeout: 140 ms Minimum
• Voltage - Threshold: 2.63V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-23-5

pacchetto: SC-74A, SOT-753

DMP3165SVT-7

Diodes Incorporated

MOSFET BVDSS: 25V-30V TSOT26

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 287 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta)
• Rds On (Max) @ Id, Vgs: 95mOhm @ 2.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSOT-26
• Package / Case: SOT-23-6 Thin, TSOT-23-6

pacchetto: -

Request a Quote

SDM1A30CSP-7

Diodes Incorporated

DIODE SCHOTT 30V 1A X3-WLB1006-2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 525 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 30 V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-XDFN
• Supplier Device Package: X3-WLB1006-2
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

PI6C49CB04AJWEX

Diodes Incorporated

IC CLK BUFFER 1:4 160MHZ 8SOIC

• Type: Fanout Buffer (Distribution)
• Number of Circuits: 1
• Ratio - Input:Output: 1:4
• Differential - Input:Output: No/No
• Input: LVCMOS, LVTTL
• Output: LVCMOS, LVTTL
• Frequency - Max: 160 MHz
• Voltage - Supply: 1.425V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacchetto: -

Request a Quote

PI3USB4002AQ1ZUAEX

Diodes Incorporated

IC SWITCH SPST X 2 10OHM 10UQFN

• Switch Circuit: SPST
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 2
• On-State Resistance (Max): 10Ohm
• Channel-to-Channel Matching (ΔRon): 500mOhm
• Voltage - Supply, Single (V+): 2.7V ~ 5.5V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): -
• -3db Bandwidth: 1GHz
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 5pF
• Current - Leakage (IS(off)) (Max): 1µA
• Crosstalk: -35dB @ 240MHz
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 10-UFQFN
• Supplier Device Package: 10-UQFN (1.5x2)

pacchetto: -

DMTH63M6LPSW-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2479 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.3W (Ta), 84.7W (Tc)
• Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerDI5060-8 (Type UX)
• Package / Case: 8-PowerTDFN

pacchetto: -

Request a Quote

AL3022MTR-BG1

Diodes Incorporated

IC LED DRIVER CTRLR PWM 8SO

• Type: DC DC Controller
• Topology: Step-Up (Boost)
• Internal Switch(s): No
• Number of Outputs: 1
• Voltage - Supply (Min): 4V
• Voltage - Supply (Max): 18V
• Voltage - Output: 0.2V ~ 18V
• Current - Output / Channel: -
• Frequency: 140kHz
• Dimming: Analog, PWM
• Applications: Backlight
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

pacchetto: -

Request a Quote