Prodotti Diodes Incorporated

FN0400063

Diodes Incorporated

OSCILLATOR XO 4.000MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 4MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±50ppm
• Operating Temperature: -40°C ~ 85°C
• Current - Supply (Max): 15mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
• Height - Seated (Max): 0.071" (1.80mm)

pacchetto: 4-SMD, No Lead

DMP21D0UFB-7

Diodes Incorporated

MOSFET P-CH 20V 0.77A DFN1006-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 76.5pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 430mW (Ta)
• Rds On (Max) @ Id, Vgs: 495 mOhm @ 400mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 3-DFN1006 (1.0x0.6)
• Package / Case: 3-UFDFN

pacchetto: 3-UFDFN

DMP4015SK3Q-13

Diodes Incorporated

MOSFET P-CH 40V 14A TO252 DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 47.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 4234pF @ 20V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 3.5W (Ta)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 9.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

DMHC3025LSD-13

Diodes Incorporated

MOSFET 2N/2P-CH 30V 8SO

• FET Type: 2 N and 2 P-Channel (H-Bridge)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6A, 4.2A
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
• Power - Max: 1.5W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

DDTC124XCA-7

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT23-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

MMSZ5237BS-7

Diodes Incorporated

DIODE ZENER 8.2V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 6.5V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

pacchetto: SC-76, SOD-323

BZT52C20S-7

Diodes Incorporated

DIODE ZENER 20V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±6%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 14V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

pacchetto: SC-76, SOD-323

DDZ20C-7

Diodes Incorporated

DIODE ZENER 20V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±3%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 28 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 15V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

pacchetto: SOD-123

BZX84C7V5TS-7-F

Diodes Incorporated

DIODE ZENER ARRAY 7.5V SOT363

• Configuration: 3 Independent
• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±6%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 5V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

pacchetto: 6-TSSOP, SC-88, SOT-363

DZ23C9V1-7

Diodes Incorporated

DIODE ZENER ARRAY 9.1V SOT23-3

• Configuration: 1 Pair Common Cathode
• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

ZC933ATA

Diodes Incorporated

DIODE VAR CAP 42PF 1A SOT23-3

• Capacitance @ Vr, F: 12pF @ 4V, 50MHz
• Capacitance Ratio: -
• Capacitance Ratio Condition: -
• Voltage - Peak Reverse (Max): 12V
• Diode Type: Single
• Q @ Vr, F: 150 @ 4V, 50MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

DSR8V600

Diodes Incorporated

DIODE GEN PURP 600V 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 3.2V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 23ns
• Current - Reverse Leakage @ Vr: 20µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: TO-220-2

MBR1060

Diodes Incorporated

DIODE SCHOTTKY 60V 10A TO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 60V
• Capacitance @ Vr, F: 400pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: TO-220-2

1N4148W-7

Diodes Incorporated

DIODE GEN PURP 100V 300MA SOD123

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 300mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: SOD-123

SBR1U200P1-7

Diodes Incorporated

DIODE SBR 200V 1A POWERDI123

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 820mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 50µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: POWERDI?123
• Supplier Device Package: PowerDI? 123
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: POWERDI?123

S2M-13-F

Diodes Incorporated

DIODE GEN PURP 1KV 1.5A SMB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-214AA, SMB

AP1117Y33L-13

Diodes Incorporated

IC REG LINEAR 3.3V 1A SOT89-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 18V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.4V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 60dB (180Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

pacchetto: TO-243AA

PT7M8202B33TA5EX-2017

Diodes Incorporated

IC REG LINEAR 300MA SOT25

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

PT8A3243WE

Diodes Incorporated

HEATER CONTROLLER SO-8

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

74LVC2G38HK3-7

Diodes Incorporated

LOGIC LVC 2 GATE X2-DFN1410-8

• Logic Type: NAND Gate
• Number of Circuits: 2
• Number of Inputs: 4
• Features: Open Drain
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 10µA
• Current - Output High, Low: -, 32mA
• Logic Level - Low: 0.1 V ~ 0.8 V
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 50pF
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN1410-8
• Package / Case: 8-XFDFN

pacchetto: 8-XFDFN

74AUP2G17FW3-7

Diodes Incorporated

IC BUFFER SCHMITT TRIG DL 6DFN

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 1
• Input Type: Schmitt Trigger
• Output Type: Push-Pull
• Current - Output High, Low: 4mA, 4mA
• Voltage - Supply: 0.8 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN
• Supplier Device Package: X2-DFN0910-6

pacchetto: 6-XFDFN

PI3HDMI412FTBE

Diodes Incorporated

IC DVI/HDMI MUX/DEMUX 48BQSOP

• Applications: Video
• Interface: -
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 48-FSOP (0.154", 3.90mm Width)
• Supplier Device Package: 48-BQSOP
• Mounting Type: Surface Mount

pacchetto: 48-FSOP (0.154", 3.90mm Width)

PI7C9X20505GPBNDE

Diodes Incorporated

IC PCIE PACKET SWITCH 256BGA

• Applications: Packet Switch, 5-Port/5-Lane
• Interface: PCI Express
• Voltage - Supply: -
• Package / Case: 256-BGA
• Supplier Device Package: 256-PBGA (17x17)
• Mounting Type: Surface Mount

pacchetto: 256-BGA

AH3765Q-P-B

Diodes Incorporated

MAGNETIC SWITCH LATCH 3SIP

• Function: Latch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 9mT Trip, -9mT Release
• Test Condition: -40°C ~ 150°C
• Voltage - Supply: 3 V ~ 28 V
• Current - Supply (Max): 4mA
• Current - Output (Max): 60mA
• Output Type: Open Drain
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 150°C (TA)
• Package / Case: 3-SIP Module
• Supplier Device Package: 3-SIP

pacchetto: 3-SIP Module

AP3441SHE-7B

Diodes Incorporated

IC REG BUCK ADJ 3A UDFN2020-8

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 2.7V
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.6V
• Voltage - Output (Max): 5.5V
• Current - Output: 3A
• Frequency - Switching: 1MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-VFDFN Exposed Pad
• Supplier Device Package: U-DFN2020-8

pacchetto: 8-VFDFN Exposed Pad

DMN6017SFV-7

Diodes Incorporated

MOSFET N-CH 60V 35A POWERDI3333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2711 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8 (Type UX)
• Package / Case: 8-PowerVDFN

pacchetto: -

DMP22D4UFO-7B

Diodes Incorporated

MOSFET P-CH 20V 530MA 3DFN

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 28.7 pF @ 15 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 820mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN0604-3
• Package / Case: 3-XFDFN

pacchetto: -

DMN1019USNQ-13

Diodes Incorporated

MOSFET BVDSS: 8V~24V SC59 T&R 10

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12 V
• Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 800mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds: 2426 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 680mW (Ta)
• Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-59-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacchetto: -

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