Prodotti Diodes Incorporated

DMN65D8LQ-13

Diodes Incorporated

MOSFET N-CH 60V SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 370mW (Ta)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 115mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

DMNH6008SPSQ-13

Diodes Incorporated

MOSFET NCH 60V 16.5A POWERDI

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 88A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2597pF @ 30V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI5060-8
• Package / Case: 8-PowerTDFN

pacchetto: 8-PowerTDFN

DMC1018UPD-13

Diodes Incorporated

MOSFET N/P-CH 12V POWERDI5060

• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 12V, 20V
• Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
• Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V
• Power - Max: 2.3W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: PowerDI5060-8

pacchetto: 8-PowerTDFN

MMSTA92-7

Diodes Incorporated

TRANS PNP 300V 0.1A SC70-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 300V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Current - Collector Cutoff (Max): 250nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
• Power - Max: 200mW
• Frequency - Transition: 50MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

pacchetto: SC-70, SOT-323

MMST2222A-7

Diodes Incorporated

TRANS NPN 40V 0.6A SC70-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 200mW
• Frequency - Transition: 300MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

pacchetto: SC-70, SOT-323

BCX5610TA

Diodes Incorporated

TRANS NPN 80V 1A SOT89

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 1W
• Frequency - Transition: 150MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89

pacchetto: TO-243AA

DCX100NS-7

Diodes Incorporated

TRANS NPN/PNP PREBIAS SOT563

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 50mA, 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k, 1k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 33 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

pacchetto: SOT-563, SOT-666

DDZ8V2BQ-7

Diodes Incorporated

DIODE ZENER SOD123

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±3%
• Power - Max: 310mW
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 6.5V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

pacchetto: SOD-123

MBR1650

Diodes Incorporated

DIODE SCHOTTKY 50V 16A TO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 16A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 50V
• Capacitance @ Vr, F: 450pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: TO-220-2

D5G-T

Diodes Incorporated

DIODE GEN PURP 600V 1A T1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: T1, Axial
• Supplier Device Package: T-1
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: T1, Axial

MBRB10150CT-13

Diodes Incorporated

DIODE SCHOTTKY 150V 10A D2PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 890mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 150V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AP2132UMP-1.8TRG1

Diodes Incorporated

IC REG LINEAR POS ADJ 2A 8SOP

• Output Configuration: Positive
• Output Type: Adjustable (Fixed)
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.6V (1.8V)
• Voltage - Output (Max): 3V
• Voltage Dropout (Max): 0.45V @ 2A
• Current - Output: 2A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 300µA
• PSRR: 60dB (100Hz ~ 1kHz)
• Control Features: Enable, Power Good
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: 8-PSOP

pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

AP7335-10SNG-7

Diodes Incorporated

IC REG LINEAR 1V 300MA 6DFN2020

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 1V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.3V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 80µA
• PSRR: 65dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: 6-DFN2020 (2x2)

pacchetto: 6-UDFN Exposed Pad

AP1186K5-18L-13

Diodes Incorporated

IC REG LINEAR 1.8V 1.5A TO263-5

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 16V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.38V @ 1.5A
• Current - Output: 1.5A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 25mA
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
• Supplier Device Package: TO-263-5

pacchetto: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

PT7M7433TAEX-2017

Diodes Incorporated

RESET GENERATOR SOT25

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: 90 ms Minimum
• Voltage - Threshold: Adjustable/Selectable
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

AP2815BM-G1

Diodes Incorporated

IC USB POWER SWITCH 8SOIC

• Switch Type: USB Switch
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 2.7 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.5A
• Rds On (Typ): 60 mOhm
• Input Type: Non-Inverting
• Features: Status Flag
• Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacchetto: 8-SOIC (0.154", 3.90mm Width)

AP9101CAK6-CBTRG1

Diodes Incorporated

MULTICELL BATT MANAGER SOT26

• Function: -
• Battery Chemistry: -
• Number of Cells: -
• Fault Protection: -
• Interface: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

PI3USB20LEX

Diodes Incorporated

IC USB SWITCH QUAD 2X1 16TSSOP

• Applications: USB
• Multiplexer/Demultiplexer Circuit: 2:1
• Switch Circuit: -
• Number of Channels: 4
• On-State Resistance (Max): 8 Ohm
• Voltage - Supply, Single (V+): 3 V ~ 3.6 V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 500MHz
• Features: Bi-Directional, USB 2.0
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

pacchetto: 16-TSSOP (0.173", 4.40mm Width)

PI2DBS212ZHE

Diodes Incorporated

IC MUX/DEMUX 2X2 28TQFN

• Applications: Telecommunications
• Multiplexer/Demultiplexer Circuit: 2:1
• Switch Circuit: -
• Number of Channels: 2
• On-State Resistance (Max): 10 Ohm
• Voltage - Supply, Single (V+): 1.2 V ~ 1.8 V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 2GHz
• Features: SATA
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 28-VFQFN Exposed Pad
• Supplier Device Package: 28-TQFN-EP (3.5x5.5)

pacchetto: 28-VFQFN Exposed Pad

SXF620011

Diodes Incorporated

CLOCK SAW OSCILLATOR SEAM7050

• Type: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Input: -
• Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

PI49FCT3807CSE

Diodes Incorporated

IC CLK BUFFER 1:10 100MHZ 20SOIC

• Type: Fanout Buffer (Distribution)
• Number of Circuits: 1
• Ratio - Input:Output: 1:10
• Differential - Input:Output: No/No
• Input: CMOS, TTL
• Output: CMOS, TTL
• Frequency - Max: 100MHz
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SOIC

pacchetto: 20-SOIC (0.295", 7.50mm Width)

1.5KE18CA-T

Diodes Incorporated

TVS DIODE 15.3VWM 25.2VC DO201A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 15.3V
• Voltage - Breakdown (Min): 17.1V
• Voltage - Clamping (Max) @ Ipp: 25.2V
• Current - Peak Pulse (10/1000µs): 59.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: DO-201

pacchetto: DO-201AA, DO-27, Axial

AH49HNTR-G1

Diodes Incorporated

SENSOR LINEAR ANALOG SOT23-3

• Type: Linear
• Technology: Hall Effect
• Axis: Single
• Output Type: Analog Voltage
• Sensing Range: ±300mT
• Voltage - Supply: 3 V ~ 8 V
• Current - Supply (Max): 3.2mA
• Current - Output (Max): -
• Resolution: -
• Bandwidth: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Features: -
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

AP22615AWU-7

Diodes Incorporated

IC LOAD SWITCH TSOT26

• Switch Type: USB Switch
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N/P-Channel
• Interface: On/Off
• Voltage - Load: 0 V ~ 23 V
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Current - Output (Max): 3A
• Rds On (Typ): 40 mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Status Flag
• Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: TSOT-26

pacchetto: SOT-23-6 Thin, TSOT-23-6

AP7345D-2833RH4-7

Diodes Incorporated

LDO CMOS LOWCURR X2-DFN1612-8

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 2
• Voltage - Input (Max): 5.25V
• Voltage - Output (Min/Fixed): 2.8V, 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.3V @ 300mA, 0.29V @ 300mA
• Current - Output: 300mA, 300mA
• Current - Quiescent (Iq): 140µA
• Current - Supply (Max): 70µA
• PSRR: 75dB (1kHz)
• Control Features: Current Limit, Enable
• Protection Features: Short Circuit
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-XFDFN Exposed Pad
• Supplier Device Package: X2-DFN1612-8

pacchetto: 8-XFDFN Exposed Pad

SDT15H50P5-13D

Diodes Incorporated

DIODE SCHOTTKY 50V 15A PWRDI5 5K

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 50 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI™ 5
• Supplier Device Package: PowerDI™ 5
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

BSS138DWK-13

Diodes Incorporated

MOSFET 2N-CH 50V 0.31A SOT363

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
• Rds On (Max) @ Id, Vgs: 2.6Ohm @ 200mA, 10V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
• Power - Max: 330mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

pacchetto: -

Request a Quote

MSB40M-13

Diodes Incorporated

LOW POWER BRIDGE MSBL T&R 2.5K

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 4 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Lead
• Supplier Device Package: MSBL

pacchetto: -

Request a Quote