Prodotti Diodes Incorporated - PMIC - Gate driver | Heisener Electronics
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Prodotti Diodes Incorporated - PMIC - Gate driver

Record 94
Pagina  1/4
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DGD05473FNQ-7
Diodes Incorporated

HV GATE DRIVER U-DFN3030-10

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.7V ~ 14V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 2.5A
  • Input Type: CMOS/TTL
  • High Side Voltage - Max (Bootstrap): 50V
  • Rise / Fall Time (Typ): 16ns, 12ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN3030-10
pacchetto: 10-UFDFN Exposed Pad
Azione2.368
Independent
2
N-Channel MOSFET
4.7V ~ 14V
0.8V, 2.4V
1.5A, 2.5A
CMOS/TTL
50V
16ns, 12ns
150°C (TJ)
Surface Mount
10-UFDFN Exposed Pad
U-DFN3030-10
DGD0590AFU-7
Diodes Incorporated

HV GATE DRIVER V-QFN3030-8

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 5.5V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1A, 3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 50V
  • Rise / Fall Time (Typ): 27ns, 29ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VQFN Exposed Pad
  • Supplier Device Package: V-QFN3030-8 (Type TH)
pacchetto: 8-VQFN Exposed Pad
Azione5.424
Independent
2
N-Channel MOSFET
4.5V ~ 5.5V
-
1A, 3A
Non-Inverting
50V
27ns, 29ns
150°C (TJ)
Surface Mount
8-VQFN Exposed Pad
V-QFN3030-8 (Type TH)
DGD0590FU-7
Diodes Incorporated

IC GATE DRV HALFBRD QFN3030-8 3K

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 5.5V
  • Logic Voltage - VIL, VIH: 1V, 3.3V
  • Current - Peak Output (Source, Sink): 1A, 3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 50V
  • Rise / Fall Time (Typ): 27ns, 29ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VQFN Exposed Pad
  • Supplier Device Package: V-QFN3030-8
pacchetto: 8-VQFN Exposed Pad
Azione7.408
Independent
2
N-Channel MOSFET
4.5V ~ 5.5V
1V, 3.3V
1A, 3A
Non-Inverting
50V
27ns, 29ns
-40°C ~ 150°C (TJ)
Surface Mount
8-VQFN Exposed Pad
V-QFN3030-8
DGD05463M10-13
Diodes Incorporated

IC GATE DRV HALFBRDG 10MSOP 2.5K

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 14V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 2.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 50V
  • Rise / Fall Time (Typ): 17ns, 12ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 10-MSOP
pacchetto: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Azione5.408
Synchronous
2
N-Channel MOSFET
4.5V ~ 14V
0.8V, 2.4V
1.5A, 2.5A
Non-Inverting
50V
17ns, 12ns
-40°C ~ 150°C (TJ)
Surface Mount
10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
10-MSOP
DGD36030S28-13
Diodes Incorporated

HV GATE DRIVER SO-28

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.504
-
-
-
-
-
-
-
-
-
-
-
-
-
DGD0636MS28-13
Diodes Incorporated

HV GATE DRIVER SO-28

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10V ~ 20V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 100V
  • Rise / Fall Time (Typ): 90ns, 35ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SO
pacchetto: 28-SOIC (0.295", 7.50mm Width)
Azione4.960
3-Phase
6
IGBT, N-Channel MOSFET
10V ~ 20V
0.8V, 2.4V
200mA, 350mA
Inverting
100V
90ns, 35ns
150°C (TJ)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SO
DGD2012S8-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDG 8SO 2.5K

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10V ~ 20V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 1.9A, 2.3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 200V
  • Rise / Fall Time (Typ): 40ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione3.488
Independent
2
N-Channel MOSFET
10V ~ 20V
0.8V, 2.5V
1.9A, 2.3A
Non-Inverting
200V
40ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DGD2005S8-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDG 8SO 2.5K

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10V ~ 20V
  • Logic Voltage - VIL, VIH: 0.6V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 200V
  • Rise / Fall Time (Typ): 100ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.728
Independent
2
N-Channel MOSFET
10V ~ 20V
0.6V, 2.5V
290mA, 600mA
Non-Inverting
200V
100ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DGD0215WT-7
Diodes Incorporated

IC GATE DRIVER SOT25

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 18V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.9A, 1.8A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 15ns, 15ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
  • Supplier Device Package: TSOT-25
pacchetto: SOT-23-5 Thin, TSOT-23-5
Azione3.008
Single
1
IGBT, N-Channel MOSFET
4.5V ~ 18V
0.8V, 2.4V
1.9A, 1.8A
Inverting
-
15ns, 15ns
-40°C ~ 125°C (TA)
Surface Mount
SOT-23-5 Thin, TSOT-23-5
TSOT-25
DGD0216WT-7
Diodes Incorporated

IC GATE DRIVER SOT25

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 18V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.9A, 1.8A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 15ns, 15ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
  • Supplier Device Package: TSOT-25
pacchetto: SOT-23-5 Thin, TSOT-23-5
Azione5.872
Single
1
IGBT, N-Channel MOSFET
4.5V ~ 18V
0.8V, 2.4V
1.9A, 1.8A
Non-Inverting
-
15ns, 15ns
-40°C ~ 125°C (TA)
Surface Mount
SOT-23-5 Thin, TSOT-23-5
TSOT-25
DGD2003S8-13
Diodes Incorporated

IC GATE HV DRVR SO-8

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10V ~ 20V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 200V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO Type TH
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione23.640
Synchronous
2
N-Channel MOSFET
10V ~ 20V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
200V
70ns, 35ns
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO Type TH
DGD23892S28-13
Diodes Incorporated

IC GATE DRVR HALF-BRDG 28SO 1.5K

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10V ~ 15V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 350mA, 650mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SO
pacchetto: 28-SOIC (0.295", 7.50mm Width)
Azione2.144
3-Phase
6
IGBT, N-Channel MOSFET
10V ~ 15V
0.8V, 2.4V
350mA, 650mA
Inverting
600V
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SO
DGD0636S28-13
Diodes Incorporated

IC GATE DRVR HALF-BRDG 28SO 1.5K

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10V ~ 20V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 100V
  • Rise / Fall Time (Typ): 90ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SO
pacchetto: 28-SOIC (0.295", 7.50mm Width)
Azione4.272
3-Phase
6
N-Channel MOSFET
10V ~ 20V
0.8V, 2.4V
200mA, 350mA
Inverting
100V
90ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SO
DGD2136MS28-13
Diodes Incorporated

HV GATE DRIVER SO-28

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10V ~ 20V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 90ns, 35ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SO
pacchetto: 28-SOIC (0.295", 7.50mm Width)
Azione7.616
3-Phase
6
IGBT, N-Channel MOSFET
10V ~ 20V
0.8V, 2.4V
200mA, 350mA
Inverting
600V
90ns, 35ns
150°C (TJ)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SO
DGD2164MS14-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 14SOIC

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
DGD0211CWTQ-7
Diodes Incorporated

HV Gate Driver TSOT25 T&R 3K

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 18V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.9A, 1.8A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 15ns, 15ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
  • Supplier Device Package: TSOT-25
pacchetto: -
Azione7.728
Single
1
N-Channel MOSFET
4.5V ~ 18V
0.8V, 2.4V
1.9A, 1.8A
Inverting, Non-Inverting
-
15ns, 15ns
-40°C ~ 125°C (TA)
Surface Mount
SOT-23-5 Thin, TSOT-23-5
TSOT-25
DGD0280WTQ-7
Diodes Incorporated

HV GATE DRIVER TSOT25 T&R 3K

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 18V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2.5A, 2.8A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 15ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
  • Supplier Device Package: TSOT-25
pacchetto: -
Request a Quote
Single
1
IGBT, N-Channel MOSFET
4.5V ~ 18V
0.8V, 2V
2.5A, 2.8A
Non-Inverting
-
20ns, 15ns
-40°C ~ 125°C (TA)
Surface Mount
SOT-23-5 Thin, TSOT-23-5
TSOT-25
DGD2388MS20-13
Diodes Incorporated

HV Gate Driver SO-20 T&R 1.5K

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10V ~ 20V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 420mA, 750mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600 V
  • Rise / Fall Time (Typ): 45ns, 25ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SO Type TH
pacchetto: -
Azione13.440
3-Phase
6
N-Channel MOSFET
10V ~ 20V
0.8V, 2.4V
420mA, 750mA
Non-Inverting
600 V
45ns, 25ns
-40°C ~ 125°C (TA)
Surface Mount
20-SOIC (0.295", 7.50mm Width)
20-SO Type TH
DGD0579UFNQ-7
Diodes Incorporated

HV GATE DRIVER W-DFN3030-10 T&R

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 7V ~ 18V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 1.5A, 2.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 100 V
  • Rise / Fall Time (Typ): 19ns, 15ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 10-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN3030-10
pacchetto: -
Request a Quote
Independent
2
N-Channel MOSFET
7V ~ 18V
0.8V, 2.5V
1.5A, 2.5A
Non-Inverting
100 V
19ns, 15ns
-40°C ~ 125°C (TA)
Surface Mount
10-UFDFN Exposed Pad
U-DFN3030-10
DGD0597FUQ-7
Diodes Incorporated

HV GATE DRIVER V-QFN3030-8 T&R 3

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 5.5V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 1.5A, 2.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 40 V
  • Rise / Fall Time (Typ): 7ns, 5ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VQFN Exposed Pad
  • Supplier Device Package: V-QFN3030-8
pacchetto: -
Azione9.000
Independent
2
N-Channel MOSFET
4.5V ~ 5.5V
0.8V, 2.5V
1.5A, 2.5A
Non-Inverting
40 V
7ns, 5ns
-40°C ~ 125°C (TA)
Surface Mount
8-VQFN Exposed Pad
V-QFN3030-8
DGD05791UFN-7
Diodes Incorporated

HV GATE DRIVER U-DFN3030-10 T&R

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6.5V ~ 18V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 1.5A, 2.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 100 V
  • Rise / Fall Time (Typ): 19ns, 15ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 10-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN3030-10
pacchetto: -
Request a Quote
Independent
2
N-Channel MOSFET
6.5V ~ 18V
0.8V, 2.5V
1.5A, 2.5A
Non-Inverting
100 V
19ns, 15ns
-40°C ~ 125°C (TA)
Surface Mount
10-UFDFN Exposed Pad
U-DFN3030-10
DGD0636M28-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 28SOIC

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
DGD0211CWT-7
Diodes Incorporated

HV GATE DRIVER TSOT25 T&R 3K

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 18V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.9A, 1.8A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 15ns, 15ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
  • Supplier Device Package: TSOT-25
pacchetto: -
Azione23.382
Single
1
IGBT, N-Channel MOSFET
4.5V ~ 18V
0.8V, 2.4V
1.9A, 1.8A
Inverting, Non-Inverting
-
15ns, 15ns
-40°C ~ 125°C (TA)
Surface Mount
SOT-23-5 Thin, TSOT-23-5
TSOT-25
DGD0280WT-7
Diodes Incorporated

HV GATE DRIVER SOT25

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 18V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2.5A, 2.8A
  • Input Type: CMOS, TTL
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 15ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
  • Supplier Device Package: TSOT-23-5
pacchetto: -
Azione15.090
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5V ~ 18V
0.8V, 2V
2.5A, 2.8A
CMOS, TTL
-
20ns, 15ns
-40°C ~ 125°C (TA)
Surface Mount
SOT-23-5 Thin, TSOT-23-5
TSOT-23-5
ZXGD3004E6QTA
Diodes Incorporated

TRANSISTOR GATE DRIVER SOT26 T&R

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Independent
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 40V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 8A, 8A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 14ns, 14ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
pacchetto: -
Request a Quote
Independent
1
IGBT, N-Channel MOSFET
40V
-
8A, 8A
Non-Inverting
-
14ns, 14ns
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
DGD0597FU-7
Diodes Incorporated

HV GATE DRIVER V-QFN3030-8 T&R 3

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 5.5V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 1.5A, 2.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 40 V
  • Rise / Fall Time (Typ): 7ns, 5ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VQFN Exposed Pad
  • Supplier Device Package: V-QFN3030-8
pacchetto: -
Azione8.865
Independent
2
N-Channel MOSFET
4.5V ~ 5.5V
0.8V, 2.5V
1.5A, 2.5A
Non-Inverting
40 V
7ns, 5ns
-40°C ~ 125°C (TA)
Surface Mount
8-VQFN Exposed Pad
V-QFN3030-8
DGD0579UFN-7
Diodes Incorporated

HV GATE DRIVER,W-DFN3030-10,T&R,

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6.5V ~ 18V
  • Logic Voltage - VIL, VIH: 0.8V, 6.5V
  • Current - Peak Output (Source, Sink): 1.5A, 2.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 100 V
  • Rise / Fall Time (Typ): 19ns, 15ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: W-DFN3030-10
pacchetto: -
Azione19.878
Independent
2
N-Channel MOSFET
6.5V ~ 18V
0.8V, 6.5V
1.5A, 2.5A
Non-Inverting
100 V
19ns, 15ns
-40°C ~ 125°C (TA)
Surface Mount
10-WFDFN Exposed Pad
W-DFN3030-10
DGD1003FTA-13
Diodes Incorporated

HV GATE DRIVER V-DFN3035-8(TYPE

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10V ~ 20V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 150 V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN
  • Supplier Device Package: V-DFN3035-8
pacchetto: -
Azione15.000
Independent
2
IGBT, N-Channel MOSFET
10V ~ 20V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
150 V
70ns, 35ns
-40°C ~ 125°C (TA)
Surface Mount
8-VDFN
V-DFN3035-8