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Prodotti WeEn Semiconductors

Record 884
Pagina  14/32
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
BTA216B-600F,118
WeEn Semiconductors

TRIAC 600V 16A D2PAK

  • Triac Type: Standard
  • Voltage - Off State: 600V
  • Current - On State (It (RMS)) (Max): 16A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 150A
  • Current - Gate Trigger (Igt) (Max): 25mA
  • Current - Hold (Ih) (Max): 30mA
  • Configuration: Single
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione3.424
BTA410Y-800BT,127
WeEn Semiconductors

TRIAC 800V 10A TO220AB

  • Triac Type: Standard
  • Voltage - Off State: 800V
  • Current - On State (It (RMS)) (Max): 10A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 110A
  • Current - Gate Trigger (Igt) (Max): 50mA
  • Current - Hold (Ih) (Max): 60mA
  • Configuration: Single
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Isolated Tab
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3 Isolated Tab
Azione5.504
BTA312X-800C,127
WeEn Semiconductors

TRIAC 800V 12A TO220-3

  • Triac Type: Standard
  • Voltage - Off State: 800V
  • Current - On State (It (RMS)) (Max): 12A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 95A, 105A
  • Current - Gate Trigger (Igt) (Max): 35mA
  • Current - Hold (Ih) (Max): 35mA
  • Configuration: Single
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220F
pacchetto: TO-220-3 Full Pack, Isolated Tab
Azione6.640
BTA212-600D,127
WeEn Semiconductors

TRIAC SENS GATE 600V 12A TO220AB

  • Triac Type: Logic - Sensitive Gate
  • Voltage - Off State: 600V
  • Current - On State (It (RMS)) (Max): 12A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 95A, 105A
  • Current - Gate Trigger (Igt) (Max): 5mA
  • Current - Hold (Ih) (Max): 15mA
  • Configuration: Single
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione7.456
BTA206X-800CT/L03Q
WeEn Semiconductors

BTA206X-800CT/L03/TO-220F/STAN

  • Triac Type: Standard
  • Voltage - Off State: 800V
  • Current - On State (It (RMS)) (Max): 6A
  • Voltage - Gate Trigger (Vgt) (Max): 1V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 66A
  • Current - Gate Trigger (Igt) (Max): 35mA
  • Current - Hold (Ih) (Max): 35mA
  • Configuration: Single
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220F
pacchetto: TO-220-3 Full Pack, Isolated Tab
Azione4.800
BTA201-600E/L02EP
WeEn Semiconductors

BTA201-600E/L02/TO-92/STANDARD

  • Triac Type: Standard
  • Voltage - Off State: 600V
  • Current - On State (It (RMS)) (Max): 1A
  • Voltage - Gate Trigger (Vgt) (Max): 1V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 12.5A, 13.7A
  • Current - Gate Trigger (Igt) (Max): 10mA
  • Current - Hold (Ih) (Max): 12mA
  • Configuration: Single
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione2.768
BTA2008-600EQP
WeEn Semiconductors

BTA2008-600E/TO-92/STANDARD MA

  • Triac Type: Standard
  • Voltage - Off State: 600V
  • Current - On State (It (RMS)) (Max): 800mA
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 9A, 9.9A
  • Current - Gate Trigger (Igt) (Max): 10mA
  • Current - Hold (Ih) (Max): 12mA
  • Configuration: Single
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione4.032
BT131-600DQP
WeEn Semiconductors

TRIAC SENS GATE 600V 1A TO92-3

  • Triac Type: Logic - Sensitive Gate
  • Voltage - Off State: 600V
  • Current - On State (It (RMS)) (Max): 1A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 12.5A, 13.7A
  • Current - Gate Trigger (Igt) (Max): 5mA
  • Current - Hold (Ih) (Max): 10mA
  • Configuration: Single
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione2.720
BT137-800E,127
WeEn Semiconductors

TRIAC SENS GATE 800V 8A TO220AB

  • Triac Type: Logic - Sensitive Gate
  • Voltage - Off State: 800V
  • Current - On State (It (RMS)) (Max): 8A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A
  • Current - Gate Trigger (Igt) (Max): 10mA
  • Current - Hold (Ih) (Max): 20mA
  • Configuration: Single
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione106.716
BTA316B-600B,118
WeEn Semiconductors

TRIAC 600V 16A D2PAK

  • Triac Type: Standard
  • Voltage - Off State: 600V
  • Current - On State (It (RMS)) (Max): 16A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 150A
  • Current - Gate Trigger (Igt) (Max): 50mA
  • Current - Hold (Ih) (Max): 60mA
  • Configuration: Single
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione14.028
TYN16X-600CTNQ
WeEn Semiconductors

TYN16X-600CTN/TO-220F/STANDARD

  • Voltage - Off State: -
  • Voltage - Gate Trigger (Vgt) (Max): -
  • Current - Gate Trigger (Igt) (Max): -
  • Voltage - On State (Vtm) (Max): -
  • Current - On State (It (AV)) (Max): -
  • Current - On State (It (RMS)) (Max): -
  • Current - Hold (Ih) (Max): -
  • Current - Off State (Max): -
  • Current - Non Rep. Surge 50, 60Hz (Itsm): -
  • SCR Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.456
BT169D/01,112
WeEn Semiconductors

THYRISTOR 400V 50MA TO92-3

  • Voltage - Off State: 400V
  • Voltage - Gate Trigger (Vgt) (Max): 800mV
  • Current - Gate Trigger (Igt) (Max): 200µA
  • Voltage - On State (Vtm) (Max): 1.7V
  • Current - On State (It (AV)) (Max): 500mA
  • Current - On State (It (RMS)) (Max): 800mA
  • Current - Hold (Ih) (Max): 5mA
  • Current - Off State (Max): 100µA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
  • SCR Type: Sensitive Gate
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione2.992
BT152-800R,127
WeEn Semiconductors

THYRISTOR 20A 800V TO220AB

  • Voltage - Off State: 800V
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 32mA
  • Voltage - On State (Vtm) (Max): 1.75V
  • Current - On State (It (AV)) (Max): 13A
  • Current - On State (It (RMS)) (Max): 20A
  • Current - Hold (Ih) (Max): 60mA
  • Current - Off State (Max): 1mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 220A
  • SCR Type: Standard Recovery
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione29.520
BYR29X-600,127
WeEn Semiconductors

DIODE GEN PURP 600V 8A TO220F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220FP
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: TO-220-2 Full Pack, Isolated Tab
Azione4.704
BYC30W-600PQ
WeEn Semiconductors

DIODE GEN PURP 600V 30A TO247-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.75V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 22ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: TO-247-2
Azione26.256
BYV430J-600PQ
WeEn Semiconductors

BYV430J-600PQ TO3PF STANDARD

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.216
BYV42E-150,127
WeEn Semiconductors

DIODE ARRAY GP 150V 30A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 28ns
  • Current - Reverse Leakage @ Vr: 100µA @ 150V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione34.392
BYQ28X-200,127
WeEn Semiconductors

DIODE ARRAY GP 200V 10A TO220-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220-3
pacchetto: TO-220-3 Full Pack, Isolated Tab
Azione95.166
NXPSC12650B6J
WeEn Semiconductors

DIODE SIL CARBIDE 650V 12A D2PAK

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 80 µA @ 650 V
  • Capacitance @ Vr, F: 380pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: -
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WB30FV60ALZ
WeEn Semiconductors

WB30FV60AL/NAU000/NO MARK*CHIPS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Wafer
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: -
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WN3S30100CQ
WeEn Semiconductors

DIODE ARR SCHOT 100V 15A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 100 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: -
Azione18.000
BYC30-1200PQ
WeEn Semiconductors

DIODE GEN PURP 1.2KV 30A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65 ns
  • Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: -
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BYV40W-600PQ
WeEn Semiconductors

DIODE GEN PURP 600V 40A TO247-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 79 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: -
Request a Quote
NXPSC04650X6Q
WeEn Semiconductors

DIODE SIL CARBIDE 650V 4A TO220F

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 170 µA @ 650 V
  • Capacitance @ Vr, F: 130pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220F
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: -
Azione8.478
WNSC2D16650CJQ
WeEn Semiconductors

DIODE ARR SIC SCHOT 650V TO3PF

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 650 V
  • Operating Temperature - Junction: 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PF
pacchetto: -
Azione7.107
WNSC6D20650B6J
WeEn Semiconductors

DIODE SIL CARBIDE 650V 20A D2PAK

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 80 µA @ 650 V
  • Capacitance @ Vr, F: 780pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: 175°C
pacchetto: -
Azione15.024
BYV5ED-600PJ
WeEn Semiconductors

DIODE GEN PURP 600V 5A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Operating Temperature - Junction: 175°C
pacchetto: -
Azione22.470
WNSC5D30650CW6Q
WeEn Semiconductors

DIODE ARR SIC 650V 30A TO247-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
pacchetto: -
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