Prodotti Vishay Semiconductor Diodes Division

VS-VSKU105/14

Vishay Semiconductor Diodes Division

MODULE THYRISTOR 105A ADD-A-PAK

• Structure: Common Cathode - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1400V
• Current - On State (It (AV)) (Max): 105A
• Current - On State (It (RMS)) (Max): 165A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 2000A, 2094A
• Current - Hold (Ih) (Max): 250mA
• Operating Temperature: -40°C ~ 130°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 4)

pacchetto: ADD-A-PAK (3 + 4)

VS-VSKH105/10

Vishay Semiconductor Diodes Division

MODULE DIODE 1000V 105A ADD-A-PA

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1000V
• Current - On State (It (AV)) (Max): 105A
• Current - On State (It (RMS)) (Max): 235A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 2000A, 2094A
• Current - Hold (Ih) (Max): 250mA
• Operating Temperature: -40°C ~ 130°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3)

pacchetto: ADD-A-PAK (3)

BZX384C8V2-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 8.2V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 700nA @ 5V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

pacchetto: SC-76, SOD-323

TLZ27A-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 27V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 40nA @ 23V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF

pacchetto: DO-213AC, MINI-MELF, SOD-80

BZX55C6V2-TAP

Vishay Semiconductor Diodes Division

DIODE ZENER 6.2V 500MW DO35

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

pacchetto: DO-204AH, DO-35, Axial

BZT52B12-E3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 500MW SOD-123

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±2%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 9V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

pacchetto: SOD-123

RGP10JHE3/53

Vishay Semiconductor Diodes Division

DIODE SW 1A 600V 250NS DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AL, DO-41, Axial

IRKE56/06A

Vishay Semiconductor Diodes Division

DIODE MODULE 600V 60A ADD-A-PAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10mA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (2)
• Supplier Device Package: ADD-A-PAK?
• Operating Temperature - Junction: -

pacchetto: ADD-A-PAK (2)

VS-T85HF100

Vishay Semiconductor Diodes Division

DIODE MODULE 1KV 85A D-55

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 85A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-55 T-Module
• Supplier Device Package: D-55
• Operating Temperature - Junction: -

pacchetto: D-55 T-Module

GI1401-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: TO-220-2

AU2PK-M3/86A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.3A TO277A

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1.3A (DC)
• Voltage - Forward (Vf) (Max) @ If: 2.5V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Capacitance @ Vr, F: 29pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-277, 3-PowerDFN

SS5P5HM3_A/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 5A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 690mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150µA @ 50V
• Capacitance @ Vr, F: 200pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-277, 3-PowerDFN

SE10PD-M3/85A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO220AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 780ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-220AA

SS2PH6-M3/85A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 2A DO220AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2µA @ 60V
• Capacitance @ Vr, F: 93pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-220AA

BAQ334-TR3

Vishay Semiconductor Diodes Division

DIODE GEN 60V 200MA MICROMELF

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1nA @ 30V
• Capacitance @ Vr, F: 3pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: MicroMELF
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: 2-SMD, No Lead

1N4006-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-204AL, DO-41, Axial

VS-150UR100D

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 150A DO205

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 1.47V @ 600A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15mA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: DO-205AA (DO-8)
• Operating Temperature - Junction: -40°C ~ 180°C

pacchetto: DO-205AA, DO-8, Stud

VS-25F20

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 25A DO203AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 78A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 12mA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-203AA
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-203AA, DO-4, Stud

BYV27-100-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 100V 2A SOD57

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.07V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: SOD-57, Axial
• Supplier Device Package: SOD-57
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: SOD-57, Axial

SBLB25L20CTHE3/45

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 20V TO263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io) (per Diode): 12.5A
• Voltage - Forward (Vf) (Max) @ If: 490mV @ 12.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 900µA @ 20V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

1.5KA7.5AHE3/54

Vishay Semiconductor Diodes Division

TVS DIODE 6.4VWM 11.3VC 1.5KA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 6.4V
• Voltage - Breakdown (Min): 7.13V
• Voltage - Clamping (Max) @ Ipp: 11.3V
• Current - Peak Pulse (10/1000µs): 133A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KA

pacchetto: DO-201AA, DO-27, Axial

1.5KE150CHE3/73

Vishay Semiconductor Diodes Division

TVS DIODE 121VWM 215VC 1.5KE

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 121V
• Voltage - Breakdown (Min): 136V
• Voltage - Clamping (Max) @ Ipp: 215V
• Current - Peak Pulse (10/1000µs): 7A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

pacchetto: DO-201AA, DO-27, Axial

TGL41-47-E3/97

Vishay Semiconductor Diodes Division

TVS DIODE 38.1VWM 67.8VC MELF

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 38.1V
• Voltage - Breakdown (Min): 42.3V
• Voltage - Clamping (Max) @ Ipp: 67.8V
• Current - Peak Pulse (10/1000µs): 5.9A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

pacchetto: DO-213AB, MELF

SM6S30A-E3/2D

Vishay Semiconductor Diodes Division

TVS DIODE 30VWM 48.4VC DO218AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 30V
• Voltage - Breakdown (Min): 33.3V
• Voltage - Clamping (Max) @ Ipp: 48.4V
• Current - Peak Pulse (10/1000µs): 95A
• Power - Peak Pulse: 4600W (4.6kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-218AB
• Supplier Device Package: DO-218AB

pacchetto: DO-218AB

SA70AHE3/73

Vishay Semiconductor Diodes Division

TVS DIODE 70VWM 113VC DO204AC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 70V
• Voltage - Breakdown (Min): 77.8V
• Voltage - Clamping (Max) @ Ipp: 113V
• Current - Peak Pulse (10/1000µs): 4.4A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

pacchetto: DO-204AC, DO-15, Axial

VTVS15GSMF-M3-08

Vishay Semiconductor Diodes Division

TVS DIODE 25VC 15.89A DO219AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 15.1V
• Voltage - Breakdown (Min): 17.6V
• Voltage - Clamping (Max) @ Ipp: 25V
• Current - Peak Pulse (10/1000µs): 15.89A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 684pF @ 1MHz
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

pacchetto: DO-219AB

SMBJ7.0A-M3/5B

Vishay Semiconductor Diodes Division

TVS DIODE 7VWM 12VC DO-215AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 7V
• Voltage - Breakdown (Min): 7.78V
• Voltage - Clamping (Max) @ Ipp: 12V
• Current - Peak Pulse (10/1000µs): 50A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

pacchetto: DO-214AA, SMB

SMCJ78A-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 78VWM 126VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 78V
• Voltage - Breakdown (Min): 86.7V
• Voltage - Clamping (Max) @ Ipp: 126V
• Current - Peak Pulse (10/1000µs): 11.9A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

pacchetto: DO-214AB, SMC