Prodotti Vishay Semiconductor Diodes Division

VS-16RIA60

Vishay Semiconductor Diodes Division

SCR MED POWER 600V 16A TO-48

• Voltage - Off State: 600V
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 60mA
• Voltage - On State (Vtm) (Max): 1.75V
• Current - On State (It (AV)) (Max): 16A
• Current - On State (It (RMS)) (Max): 35A
• Current - Hold (Ih) (Max): 130mA
• Current - Off State (Max): 10mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 340A, 360A
• SCR Type: Standard Recovery
• Operating Temperature: -65°C ~ 125°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: TO-208AA, TO-48-3, Stud
• Supplier Device Package: TO-208AA (TO-48)

pacchetto: TO-208AA, TO-48-3, Stud

VS-40TPS12A-M3

Vishay Semiconductor Diodes Division

SCR 1200V 55A TO-247

• Voltage - Off State: 1200V
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Voltage - On State (Vtm) (Max): 1.85V
• Current - On State (It (AV)) (Max): 35A
• Current - On State (It (RMS)) (Max): 55A
• Current - Hold (Ih) (Max): 200mA
• Current - Off State (Max): 500µA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 500A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

pacchetto: TO-247-3

BZG05C6V2TR3

Vishay Semiconductor Diodes Division

DIODE ZENER 1.25W DO214AC

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: -
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC

pacchetto: DO-214AC, SMA

SMZG3792B-E3/52

Vishay Semiconductor Diodes Division

DIODE ZENER 13V 1.5W DO215AA

• Voltage - Zener (Nom) (Vz): 13V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 7.5 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 9.9V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: DO-215AA (SMBG)

pacchetto: DO-215AA, SMB Gull Wing

BZG05C15-HE3-TR

Vishay Semiconductor Diodes Division

DIODE ZENER 15V 1.25W DO214AC

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 11V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC

pacchetto: DO-214AC, SMA

MMBZ4688-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 4.7V 350MW SOT23-3

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±5%
• Power - Max: 350mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 10µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

MMBZ5241B-HE3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 11V 225MW SOT23-3

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±5%
• Power - Max: 225mW
• Impedance (Max) (Zzt): 22 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 8.4V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

MMBZ5238B-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 8.7V 225MW SOT23-3

• Voltage - Zener (Nom) (Vz): 8.7V
• Tolerance: ±5%
• Power - Max: 225mW
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 6.5V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

SS5P4HM3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 5A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250µA @ 40V
• Capacitance @ Vr, F: 280pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-277, 3-PowerDFN

183NQ080

Vishay Semiconductor Diodes Division

DIODE MODULE 80V 180A HALF-PAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 180A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 180A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 4.5mA @ 80V
• Capacitance @ Vr, F: 4150pF @ 5V, 1MHz
• Mounting Type: Chassis Mount
• Package / Case: D-67 HALF-PAK
• Supplier Device Package: HALF-PAK
• Operating Temperature - Junction: -

pacchetto: D-67 HALF-PAK

VS-150KR10A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 150A DO205AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 35mA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: DO-205AA (DO-8)
• Operating Temperature - Junction: -40°C ~ 200°C

pacchetto: DO-205AA, DO-8, Stud

VS-71HFR40

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 70A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 70A
• Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15mA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-203AB, DO-5, Stud

VS-20ETS12-M3

Vishay Semiconductor Diodes Division

DIODE INPUT RECT 20A TO-220AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: TO-220-3

S4PG-M3/86A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 4A TO277A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5µs
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-277, 3-PowerDFN

ES07B-M-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 500MA DO219

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: 4pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-219AB

S5K-E3/57T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 5A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5µs
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AB, SMC

S1FLM-GS18

Vishay Semiconductor Diodes Division

DIODE SW 1000V DO-219AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8µs
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Capacitance @ Vr, F: 4pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-219AB

SE20PB-M3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1.6A DO220AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1.6A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.2µs
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: 13pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-220AA

VS-VSKD320-04PBF

Vishay Semiconductor Diodes Division

DIODE GEN 400V 160A MAGNAPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io) (per Diode): 160A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 400V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (2)
• Supplier Device Package: MAGN-A-PAK?

pacchetto: MAGN-A-PAK (2)

30CPQ030

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 30V TO247AC

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 540mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.75mA @ 30V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

pacchetto: TO-247-3

FEPB16AT-E3/45

Vishay Semiconductor Diodes Division

DIODE ARRAY GP 50V 8A TO263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io) (per Diode): 8A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

3KBP02M-E4/72

Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 200V 3A KBPM

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBPM
• Supplier Device Package: KBPM

pacchetto: 4-SIP, KBPM

SM8S10AHE3/2D

Vishay Semiconductor Diodes Division

TVS DIODE 10VWM 17VC DO218AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 10V
• Voltage - Breakdown (Min): 11.1V
• Voltage - Clamping (Max) @ Ipp: 17V
• Current - Peak Pulse (10/1000µs): 388A
• Power - Peak Pulse: 6600W (6.6kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-218AB
• Supplier Device Package: DO-218AB

pacchetto: DO-218AB

SMBJ110-E3/5B

Vishay Semiconductor Diodes Division

TVS DIODE 110VWM 196VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 110V
• Voltage - Breakdown (Min): 122V
• Voltage - Clamping (Max) @ Ipp: 196V
• Current - Peak Pulse (10/1000µs): 3.1A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

pacchetto: DO-214AA, SMB

SM5S36HE3/2D

Vishay Semiconductor Diodes Division

TVS DIODE 36VWM 64.3VC DO218AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 36V
• Voltage - Breakdown (Min): 40V
• Voltage - Clamping (Max) @ Ipp: 64.3V
• Current - Peak Pulse (10/1000µs): 56A
• Power - Peak Pulse: 3600W (3.6kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-218AB
• Supplier Device Package: DO-218AB

pacchetto: DO-218AB

5KP78AHE3/54

Vishay Semiconductor Diodes Division

TVS DIODE 78VWM 126VC P600

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 78V
• Voltage - Breakdown (Min): 86.7V
• Voltage - Clamping (Max) @ Ipp: 126V
• Current - Peak Pulse (10/1000µs): 39.7A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

pacchetto: P600, Axial

1.5KE11AHE3_A/D

Vishay Semiconductor Diodes Division

TVS DIODE 9.4VWM 15.6VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 9.4V
• Voltage - Breakdown (Min): 10.5V
• Voltage - Clamping (Max) @ Ipp: 15.6V
• Current - Peak Pulse (10/1000µs): 96.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

pacchetto: DO-201AA, DO-27, Axial

SM15T22A-M3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 18.8VWM 30.6VC DO-214A

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 18.8V
• Voltage - Breakdown (Min): 20.9V
• Voltage - Clamping (Max) @ Ipp: 30.6V
• Current - Peak Pulse (10/1000µs): 49A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

pacchetto: DO-214AB, SMC