Prodotti Vishay Semiconductor Diodes Division

VS-ST183S08PFN1

Vishay Semiconductor Diodes Division

SCR 800V 306A TO-93

• Voltage - Off State: 800V
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 200mA
• Voltage - On State (Vtm) (Max): 1.8V
• Current - On State (It (AV)) (Max): 195A
• Current - On State (It (RMS)) (Max): 306A
• Current - Hold (Ih) (Max): 600mA
• Current - Off State (Max): 40mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 4120A, 4310A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: TO-209AB, TO-93-4, Stud
• Supplier Device Package: TO-209AB (TO-93)

pacchetto: TO-209AB, TO-93-4, Stud

VLZ3V6B-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 3.72V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 3.72V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: SOD-80 QuadroMELF

pacchetto: SOD-80 Variant

BZD27B11P-HE3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 11V 0.8W DO-219AB

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 4µA @ 8.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

pacchetto: DO-219AB

BZD27B33P-E3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 33V 0.8W DO-219AB

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 24V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

pacchetto: DO-219AB

BZT52C3V6-G3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 3.6V 410MW SOD123

• Voltage - Zener (Nom) (Vz): 3.6V
• Tolerance: ±5%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

pacchetto: SOD-123

BZT52C9V1-E3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 9.1V 410MW SOD123

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±5%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 4.8 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

pacchetto: SOD-123

MMBZ5226C-HE3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 3.3V 225MW SOT23-3

• Voltage - Zener (Nom) (Vz): 3.3V
• Tolerance: ±2%
• Power - Max: 225mW
• Impedance (Max) (Zzt): 28 Ohms
• Current - Reverse Leakage @ Vr: 25µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

GLL4744A-E3/96

Vishay Semiconductor Diodes Division

DIODE ZENER 15V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 14 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 11.4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF DO-213AB

pacchetto: DO-213AB, MELF

SML4744A-E3/61

Vishay Semiconductor Diodes Division

DIODE ZENER 15V 1W DO214AC

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 14 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 11.4V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

pacchetto: DO-214AC, SMA

RGP02-12EHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 500MA DO204

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 300ns
• Current - Reverse Leakage @ Vr: 5µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AL, DO-41, Axial

MBRS340TR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A SMC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 525mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AB, SMC

VS-1N3214R

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10mA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-203AB, DO-5, Stud

NSB8KTHE3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 8A TO263AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Capacitance @ Vr, F: 55pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AS4PDHM3_A/H

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 2.4A TO277A

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 2.4A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8µs
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-277, 3-PowerDFN

SS5P10-E3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 5A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-277, 3-PowerDFN

EGF1DHE3/5CA

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO214BA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214BA
• Supplier Device Package: DO-214BA (GF1)
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-214BA

1N6478-E3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO213AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-213AB, MELF (Glass)

SE20DGHM3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3.9A TO263AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 3.9A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 20A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 25µA @ 400V
• Capacitance @ Vr, F: 150pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
• Supplier Device Package: TO-263AC (SMPD)
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab) Variant

VSSB410S-E3/52T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 1.9A DO214AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1.9A (DC)
• Voltage - Forward (Vf) (Max) @ If: 770mV @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250µA @ 100V
• Capacitance @ Vr, F: 230pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: DO-214AA, SMB

VS-HFA12PA120C-N3

Vishay Semiconductor Diodes Division

DIODE STANDARD 1200V 6A TO247AC

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 6A
• Voltage - Forward (Vf) (Max) @ If: 3V @ 6A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 26ns
• Current - Reverse Leakage @ Vr: 5µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

pacchetto: TO-247-3

GSIB2580-E3/45

Vishay Semiconductor Diodes Division

DIODE 25A 800V GSIB-5S

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 3.5A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 12.5A
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GSIB-5S
• Supplier Device Package: GSIB-5S

pacchetto: 4-SIP, GSIB-5S

P4KE56HE3/73

Vishay Semiconductor Diodes Division

TVS DIODE 45.4VWM 80.5VC AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 45.4V
• Voltage - Breakdown (Min): 50.4V
• Voltage - Clamping (Max) @ Ipp: 80.5V
• Current - Peak Pulse (10/1000µs): 5A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

P4KA10HE3/73

Vishay Semiconductor Diodes Division

TVS DIODE 8.1VWM 15VC AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 8.1V
• Voltage - Breakdown (Min): 9V
• Voltage - Clamping (Max) @ Ipp: 15V
• Current - Peak Pulse (10/1000µs): 26.7A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

1.5KE36AHE3_A/C

Vishay Semiconductor Diodes Division

TVS DIODE 30.8VWM 49.9VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 30.8V
• Voltage - Breakdown (Min): 34.2V
• Voltage - Clamping (Max) @ Ipp: 49.9V
• Current - Peak Pulse (10/1000µs): 30.1A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

pacchetto: DO-201AA, DO-27, Axial

SMCJ10CA-M3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 10VWM 17VC DO-214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 10V
• Voltage - Breakdown (Min): 11.1V
• Voltage - Clamping (Max) @ Ipp: 17V
• Current - Peak Pulse (10/1000µs): 88.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)

pacchetto: DO-214AB, SMC

SMCJ7.5A-M3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 7.5VWM 12.9VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 7.5V
• Voltage - Breakdown (Min): 8.33V
• Voltage - Clamping (Max) @ Ipp: 12.9V
• Current - Peak Pulse (10/1000µs): 116.3A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)

pacchetto: DO-214AB, SMC

VTVS43GSMF-M3-18

Vishay Semiconductor Diodes Division

TVS DIODE 73VC 5.39A DO219AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 43.2V
• Voltage - Breakdown (Min): 50.03V
• Voltage - Clamping (Max) @ Ipp: 73V
• Current - Peak Pulse (10/1000µs): 5.39A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 292pF @ 1MHz
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

pacchetto: DO-219AB

SMCJ130CA-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 130VWM 209VC SMC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 130V
• Voltage - Breakdown (Min): 144V
• Voltage - Clamping (Max) @ Ipp: 209V
• Current - Peak Pulse (10/1000µs): 7.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

pacchetto: DO-214AB, SMC