Pagina 338 - Prodotti Vishay Semiconductor Diodes Division - Diodi - Raddrizzatori - Singoli | Heisener Electronics
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Prodotti Vishay Semiconductor Diodes Division - Diodi - Raddrizzatori - Singoli

Record 10.373
Pagina  338/371
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
AU3PMHM3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 1.4A TO277

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: 42pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione5.264
1000V
1.4A (DC)
2.5V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 1000V
42pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU3PMHM3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 1.4A TO277

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: 42pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione3.952
1000V
1.4A (DC)
2.5V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 1000V
42pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU3PKHM3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.4A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 42pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione4.224
800V
1.4A (DC)
2.5V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 800V
42pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU3PKHM3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.4A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 42pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione7.808
800V
1.4A (DC)
2.5V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 800V
42pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU3PJHM3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.7A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.7A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 72pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione4.224
600V
1.7A (DC)
1.9V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
72pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU3PJHM3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.7A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.7A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 72pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione5.744
600V
1.7A (DC)
1.9V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
72pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU3PGHM3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.7A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.7A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 72pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione7.520
400V
1.7A (DC)
1.9V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 400V
72pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU3PGHM3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.7A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.7A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 72pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione3.472
400V
1.7A (DC)
1.9V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 400V
72pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU3PDHM3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.7A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.7A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 72pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione3.328
200V
1.7A (DC)
1.9V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 200V
72pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU3PDHM3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.7A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.7A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 72pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione2.592
200V
1.7A (DC)
1.9V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 200V
72pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU2PMHM3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 1.3A TO277

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1.3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: 29pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione5.920
1000V
1.3A (DC)
2.5V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 1000V
29pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU2PMHM3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 1.3A TO277

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1.3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: 29pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione3.696
1000V
1.3A (DC)
2.5V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 1000V
29pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU2PKHM3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.3A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1.3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 29pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione5.408
800V
1.3A (DC)
2.5V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 800V
29pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU2PKHM3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.3A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1.3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 29pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione5.184
800V
1.3A (DC)
2.5V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 800V
29pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU2PJHM3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.6A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 42pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione3.696
600V
1.6A (DC)
1.9V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
42pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU2PJHM3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.6A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 42pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione5.664
600V
1.6A (DC)
1.9V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
42pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU2PGHM3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.6A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 42pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione5.760
400V
1.6A (DC)
1.9V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 400V
42pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU2PGHM3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.6A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 42pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione2.960
400V
1.6A (DC)
1.9V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 400V
42pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU2PDHM3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.6A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 42pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione2.096
200V
1.6A (DC)
1.9V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 200V
42pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU2PDHM3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.6A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 42pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione6.128
200V
1.6A (DC)
1.9V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 200V
42pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AS4PMHM3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 2.4A TO277

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 2.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione4.016
1000V
2.4A (DC)
962mV @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 1000V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AS4PMHM3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 2.4A TO277

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 2.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione5.056
1000V
2.4A (DC)
962mV @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 1000V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AS4PKHM3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 2.4A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 2.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione4.512
800V
2.4A (DC)
962mV @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 800V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AS4PKHM3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 2.4A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 2.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione2.560
800V
2.4A (DC)
962mV @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 800V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AS4PJHM3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 2.4A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione4.816
600V
2.4A (DC)
962mV @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AS4PJHM3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 2.4A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione4.368
600V
2.4A (DC)
962mV @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AS4PGHM3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 2.4A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione7.856
400V
2.4A (DC)
962mV @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 400V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AS4PGHM3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 2.4A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione4.384
400V
2.4A (DC)
962mV @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 400V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C