Prodotti Toshiba Semiconductor and Storage

GT10G131(TE12L,Q)

Toshiba Semiconductor and Storage

IGBT 400V 1W 8-SOIC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 400V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 4V, 200A
• Power - Max: 1W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 3.1µs/2µs
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP (5.5x6.0)

pacchetto: 8-SOIC (0.173", 4.40mm Width)

TPCP8103-H(TE85LFM

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 4.8A PS-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 840mW (Ta)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.4A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PS-8 (2.9x2.4)
• Package / Case: 8-SMD, Flat Lead

pacchetto: 8-SMD, Flat Lead

TK17A80W,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 800V 17A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 850µA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 300V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 290 mOhm @ 8.5A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

TPH4R003NL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 63A 8SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 36W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

pacchetto: 8-PowerVDFN

2SC2655-O(TE6,F,M)

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
• Power - Max: 900mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

pacchetto: TO-226-3, TO-92-3 Long Body

RN2112,LF(CB

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1W SSM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

pacchetto: SC-75, SOT-416

RN1905,LF

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

pacchetto: 6-TSSOP, SC-88, SOT-363

CRY68(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE ZENER 6.8V 700MW SFLAT

• Voltage - Zener (Nom) (Vz): 6.8V
• Tolerance: ±10%
• Power - Max: 700mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: S-FLAT (1.6x3.5)

pacchetto: SOD-123F

TB6551FG(O,EL,DRY)

Toshiba Semiconductor and Storage

IC MOTOR CONTROLLER PAR 24SSOP

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Controller - Commutation, Direction Management
• Output Configuration: Pre-Driver - Half Bridge (3)
• Interface: Parallel
• Technology: Bi-CMOS
• Step Resolution: -
• Applications: Fan Controller
• Current - Output: -
• Voltage - Supply: 6 V ~ 10 V
• Voltage - Load: -
• Operating Temperature: -30°C ~ 115°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-SOP (0.236", 6.00mm Width)
• Supplier Device Package: 24-SSOP

pacchetto: 24-SOP (0.236", 6.00mm Width)

TB62212FTAG,C8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48QFN

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (8)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 2A
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 10 V ~ 38 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

pacchetto: 48-VFQFN Exposed Pad

TC7SPN3125TU,LF

Toshiba Semiconductor and Storage

BUS BUFFER UNI UF6

• Translator Type: Voltage Level
• Channel Type: Unidirectional
• Number of Circuits: 1
• Channels per Circuit: 1
• Voltage - VCCA: 1.1V ~ 2.7V
• Voltage - VCCB: 1.65V ~ 3.6V
• Input Signal: -
• Output Signal: -
• Output Type: Tri-State, Non-Inverted
• Data Rate: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Features: -
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, Flat Leads
• Supplier Device Package: UF6

pacchetto: 6-SMD, Flat Leads

TC7WP3125FK(T5L,F)

Toshiba Semiconductor and Storage

IC BUS SWITCH SPST DUAL US8

• Type: Bus Switch
• Circuit: 2 x 1:1
• Independent Circuits: 1
• Current - Output High, Low: 12mA, 12mA
• Voltage Supply Source: Dual Supply
• Voltage - Supply: 1.1 V ~ 2.7 V, 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)
• Supplier Device Package: US8

pacchetto: 8-VFSOP (0.091", 2.30mm Width)

TC74VHCT74AFTEL

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG DUAL 14TSSOP

• Function: Set(Preset) and Reset
• Type: D-Type
• Output Type: Differential
• Number of Elements: 2
• Number of Bits per Element: 1
• Clock Frequency: 140MHz
• Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Iq): 2µA
• Input Capacitance: 4pF
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

pacchetto: 14-TSSOP (0.173", 4.40mm Width)

TLP290(TP,SE

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 50% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: AC, DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 4-SOIC (0.179", 4.55mm)
• Supplier Device Package: 4-SO

pacchetto: 4-SOIC (0.179", 4.55mm)

TLP2770(D4,E

Toshiba Semiconductor and Storage

OPTOISO 5KV TRI-STATE S06L

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 5000Vrms
• Common Mode Transient Immunity (Min): 20kV/µs
• Input Type: DC
• Output Type: Tri-State
• Current - Output / Channel: 10mA
• Data Rate: 20MBd
• Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
• Rise / Fall Time (Typ): 1.3ns, 1ns
• Voltage - Forward (Vf) (Typ): 1.5V
• Current - DC Forward (If) (Max): 8mA
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 6-SO

pacchetto: 6-SOIC (0.295", 7.50mm Width)

TLP116A(E)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV PUSH PULL SO6-5

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 3750Vrms
• Common Mode Transient Immunity (Min): 10kV/µs
• Input Type: DC
• Output Type: Push-Pull, Totem Pole
• Current - Output / Channel: 10mA
• Data Rate: 20MBd
• Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
• Rise / Fall Time (Typ): 15ns, 15ns
• Voltage - Forward (Vf) (Typ): 1.58V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
• Supplier Device Package: 6-SO, 5 Lead

pacchetto: 6-SOIC (0.179", 4.55mm Width) 5 Leads

TC4538BP(N,F)

Toshiba Semiconductor and Storage

IC MULTIVIBRATR 100NS 16DIP

• Logic Type: Monostable
• Independent Circuits: 2
• Schmitt Trigger Input: No
• Propagation Delay: 100ns
• Current - Output High, Low: 9mA, 15mA
• Voltage - Supply: 3V ~ 18V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-DIP

pacchetto: 16-DIP (0.300", 7.62mm)

74HC273D

Toshiba Semiconductor and Storage

IC FF D-TYPE SNGL 8BIT 20SOIC

• Function: Master Reset
• Type: D-Type
• Output Type: Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 8
• Clock Frequency: 66MHz
• Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 5.2mA, 5.2mA
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Iq): 4µA
• Input Capacitance: 3pF
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)

pacchetto: 20-SOIC (0.295", 7.50mm Width)

74VHC126FT

Toshiba Semiconductor and Storage

IC BUF NON-INVERT 5.5V 14TSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 4
• Number of Bits per Element: 1
• Input Type: -
• Output Type: 3-State
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 14-TSSOP

pacchetto: 14-TSSOP (0.173", 4.40mm Width)

TMP86PH06UG(C,JZ)

Toshiba Semiconductor and Storage

IC MCU 8BIT 16KB OTP 44LQFP

• Core Processor: -
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: EBI/EMI
• Peripherals: -
• Number of I/O: 8
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: OTP
• EEPROM Size: -
• RAM Size: 512 x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
• Data Converters: -
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 44-LQFP
• Supplier Device Package: 44-LQFP (10x10)

pacchetto: 44-LQFP

TB9051FTG,EL

Toshiba Semiconductor and Storage

MOTOR CONTROLLER SINGLE CHANNEL

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Pre-Driver - Half Bridge (2)
• Interface: PWM
• Technology: Bi-CMOS
• Step Resolution: -
• Applications: Automotive
• Current - Output: 6A
• Voltage - Supply: 4.5V ~ 5.5V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 28-PowerQFN
• Supplier Device Package: 28-QFN (6x6)

pacchetto: 28-PowerQFN

TCR5BM12,L3F

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) LINEAR VOLTAGE

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.2V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.15V @ 500mA
• Current - Output: 500mA
• Current - Quiescent (Iq): 36µA
• Current - Supply (Max): -
• PSRR: 98dB (1kHz)
• Control Features: Current Limit, Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: 5-DFNB (1.2x1.2)

pacchetto: 4-XDFN Exposed Pad

CRG05-TE85L-Q-M

Toshiba Semiconductor and Storage

DIODE GEN PURP 800V 1A S-FLAT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: S-FLAT (1.6x3.5)
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: -

RN2902-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): 10kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

pacchetto: -

2SA1971-TE12L-F

Toshiba Semiconductor and Storage

PB-FREE POWER TRANSISTOR PW-MINI

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500 mA
• Voltage - Collector Emitter Breakdown (Max): 400 V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
• Power - Max: 500 mW
• Frequency - Transition: 35MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PW-MINI

pacchetto: -

2SC6026MFV-Y-L3F

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A VESM

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 150 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
• Power - Max: 150 mW
• Frequency - Transition: 60MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

pacchetto: -

TCR2LE095-LM-CT

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.95V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.48V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 2 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

pacchetto: -

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RN1106MFV-L3XHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

pacchetto: -