Pagina 78 - Prodotti Toshiba Semiconductor and Storage

Numero di parte	Produttore	Descrizione	pacchetto	Azione
SSM5H12TU(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 1.9A UFV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 123pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 133 mOhm @ 1A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFV Package / Case: 6-SMD (5 Leads), Flat Lead	pacchetto: 6-SMD (5 Leads), Flat Lead	Azione6.608
2SJ360(F)	Toshiba Semiconductor and Storage	MOSFET P-CH 60V 1A SC-62 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 730 mOhm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PW-MINI Package / Case: TO-243AA	pacchetto: TO-243AA	Azione7.328
TPCA8A01-H(TE12L,Q	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 36A SOP8 ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 36A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 18A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	pacchetto: 8-PowerVDFN	Azione6.848
TPC8132,LQ(S	Toshiba Semiconductor and Storage	MOSFET P-CH 40V 7A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 10V Vgs (Max): +20V, -25V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione6.240
TK35A65W5,S5X	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 35A TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 2.1mA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 17.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	pacchetto: TO-220-3 Full Pack, Isolated Tab	Azione7.896
2SC4793(PAIO,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 1A 230V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	pacchetto: TO-220-3 Full Pack	Azione5.536
2SC3672-O(T2ASH,FM	Toshiba Semiconductor and Storage	TRANS NPN 100MA 300V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V Power - Max: 1W Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	pacchetto: SC-71	Azione2.176
2SC4116SU-Y,LF	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.15A USM Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	pacchetto: SC-70, SOT-323	Azione3.960.000
2SC3326-A,LF	Toshiba Semiconductor and Storage	TRANS NPN 20V 0.3A S-MINI Transistor Type: NPN Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V Power - Max: 150mW Frequency - Transition: 30MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione269.646
2SA1837(F,M)	Toshiba Semiconductor and Storage	TRANS PNP 230V 1A TO220NIS Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	pacchetto: TO-220-3 Full Pack	Azione278.208
RN2103ACT(TPL3)	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 0.1W CST3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	pacchetto: SC-101, SOT-883	Azione90.396
HN2C01FU-GR(T5L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN 50V 0.15A US6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione28.278
JDH3D01STE85LF	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 4V 25MA SSM Diode Type: Schottky Voltage - Peak Reverse (Max): 4V Current - Max: 25mA Capacitance @ Vr, F: 0.6pF @ 0.2V, 1MHz Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: 125°C (TJ) Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	pacchetto: SC-75, SOT-416	Azione3.808
TA78DS05CP,6NSNF(J	Toshiba Semiconductor and Storage	IC REG LINEAR 30MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 30mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	pacchetto: TO-226-3, TO-92-3 Long Body	Azione5.424
TCR3DM105,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 1.05V 300MA 4DFN Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.05V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): 65µA ~ 78µA PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-UDFN Exposed Pad Supplier Device Package: 4-DFN (1x1)	pacchetto: 4-UDFN Exposed Pad	Azione82.116
74HC123D(BJ)	Toshiba Semiconductor and Storage	IC MULTIVIBRATR DUAL MONO 16SOIC Logic Type: Monostable Independent Circuits: 2 Schmitt Trigger Input: Yes Propagation Delay: 40ns Current - Output High, Low: 5.2mA, 5.2mA Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	pacchetto: 16-SOIC (0.154", 3.90mm Width)	Azione7.696
TC74LCX373FTELM	Toshiba Semiconductor and Storage	IC LATCH OCTAL D-TYPE 20-TSSOP Logic Type: D-Type Latch Circuit: 8:8 Output Type: Tri-State Voltage - Supply: 1.65 V ~ 3.6 V Independent Circuits: 1 Delay Time - Propagation: 1.5ns Current - Output High, Low: 24mA, 24mA Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	pacchetto: 20-TSSOP (0.173", 4.40mm Width)	Azione2.100
TC7WH02FU,LJ(CT	Toshiba Semiconductor and Storage	IC GATE NOR 2CH 2-INP SM8 Logic Type: NOR Gate Number of Circuits: 2 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: - Logic Level - High: - Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 8-SSOP Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Azione7.040
TMP87P808MG(KYZ)	Toshiba Semiconductor and Storage	IC MCU 8BIT 8KB OTP 28SOP Core Processor: 870 Core Size: 8-Bit Speed: 8MHz Connectivity: - Peripherals: - Number of I/O: 20 Program Memory Size: 8KB (8K x 8) Program Memory Type: OTP EEPROM Size: - RAM Size: 256 x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 5.5 V Data Converters: A/D 6x8b Oscillator Type: External Operating Temperature: -30°C ~ 70°C (TA) Mounting Type: - Package / Case: 28-SOIC (0.345", 8.77mm Width) Supplier Device Package: 28-SOP	pacchetto: 28-SOIC (0.345", 8.77mm Width)	Azione5.072
LTA150B851F	Toshiba Semiconductor and Storage	LCD 15" 1024X768 XGA LVDS Display Type: TFT - Color Display Mode: Transmissive Touchscreen: - Diagonal Screen Size: 15" (381.00mm) Viewing Area: 304.13mm W x 228.10mm H Backlight: CCFL Dot Pixels: 1024 x 768 (XGA) Interface: LVDS Graphics Color: Red, Green, Blue (RGB) Background Color: -	pacchetto: -	Azione8.982
DF3A3.6FV(TPL3,Z)	Toshiba Semiconductor and Storage	TVS DIODE 1.8VWM VESM Type: Zener Unidirectional Channels: 2 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 1.8V Voltage - Breakdown (Min): 3.4V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 110pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	pacchetto: SOT-723	Azione2.646
TLP170A(F)	Toshiba Semiconductor and Storage	IC PHOTORELAY MOSFET 4-SOP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 2 Ohm Load Current: 400mA Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 60 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 4-SOP (0.173", 4.40mm) Supplier Device Package: 4-SOP (2.54mm) Relay Type: Relay	pacchetto: 4-SOP (0.173", 4.40mm)	Azione19.560
TLP590B(C,F)	Toshiba Semiconductor and Storage	OPTOISOLATOR 2.5KV PHVOLT 6-DIP Number of Channels: 1 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): - Current Transfer Ratio (Max): - Turn On / Turn Off Time (Typ): 200µs, 1ms Rise / Fall Time (Typ): - Input Type: DC Output Type: Photovoltaic Voltage - Output (Max): 7V Current - Output / Channel: 12µA Voltage - Forward (Vf) (Typ): 1.4V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): - Operating Temperature: -55°C ~ 125°C Mounting Type: Through Hole Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads Supplier Device Package: 6-DIP, 5 Lead	pacchetto: 6-DIP (0.300", 7.62mm), 5 Leads	Azione8.064
74HC126D	Toshiba Semiconductor and Storage	IC BUFFER NON-INVERT 6V 14SOP Logic Type: Buffer, Non-Inverting Number of Elements: 4 Number of Bits per Element: 1 Input Type: - Output Type: 3-State Current - Output High, Low: 7.8mA, 7.8mA Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOP	pacchetto: 14-SOIC (0.154", 3.90mm Width)	Azione14.988
TCR3UG12A,LF	Toshiba Semiconductor and Storage	IC REG LIN 1.2V 300MA 4WCSP-F Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.2V Voltage - Output (Max): - Voltage Dropout (Max): 0.857V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 580nA Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Inrush Current, Over Current, Thermal Shutdown Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Supplier Device Package: 4-WCSP-F (0.65x0.65)	pacchetto: 4-XFBGA, WLCSP	Azione52.242
XPW6R30ANB-L1XHQ	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 45A 8DSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-DSOP Advance Package / Case: 8-PowerVDFN	pacchetto: -	Azione2.286
TK190E65Z-S1X	Toshiba Semiconductor and Storage	650V DTMOS VI TO-220 190MOHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 610µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	pacchetto: -	Azione363
TCR2LN21-LF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=2.1V I=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.1V Voltage - Output (Max): - Voltage Dropout (Max): 0.54V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 2 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	pacchetto: -	Azione26.079

SSM5H12TU(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 1.9A UFV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 123pF @ 15V
Vgs (Max): ±12V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 133 mOhm @ 1A, 4V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: UFV
Package / Case: 6-SMD (5 Leads), Flat Lead

pacchetto: 6-SMD (5 Leads), Flat Lead

Azione6.608

2SJ360(F)

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 1A SC-62

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 730 mOhm @ 500mA, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PW-MINI
Package / Case: TO-243AA

pacchetto: TO-243AA

Azione7.328

TPCA8A01-H(TE12L,Q

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 36A SOP8 ADV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 18A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

pacchetto: 8-PowerVDFN

Azione6.848

TPC8132,LQ(S

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 7A 8SOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 10V
Vgs (Max): +20V, -25V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 3.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione6.240

TK35A65W5,S5X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 35A TO220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 2.1mA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 95 mOhm @ 17.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack, Isolated Tab

pacchetto: TO-220-3 Full Pack, Isolated Tab

Azione7.896

2SC4793(PAIO,F,M)

Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

pacchetto: TO-220-3 Full Pack

Azione5.536

2SC3672-O(T2ASH,FM

Toshiba Semiconductor and Storage

TRANS NPN 100MA 300V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Power - Max: 1W
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

pacchetto: SC-71

Azione2.176

2SC4116SU-Y,LF

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A USM

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

pacchetto: SC-70, SOT-323

Azione3.960.000

2SC3326-A,LF

Toshiba Semiconductor and Storage

TRANS NPN 20V 0.3A S-MINI

Transistor Type: NPN
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Power - Max: 150mW
Frequency - Transition: 30MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione269.646

2SA1837(F,M)

Toshiba Semiconductor and Storage

TRANS PNP 230V 1A TO220NIS

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 70MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

pacchetto: TO-220-3 Full Pack

Azione278.208

RN2103ACT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W CST3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

pacchetto: SC-101, SOT-883

Azione90.396

HN2C01FU-GR(T5L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A US6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione28.278

JDH3D01STE85LF

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 4V 25MA SSM

Diode Type: Schottky
Voltage - Peak Reverse (Max): 4V
Current - Max: 25mA
Capacitance @ Vr, F: 0.6pF @ 0.2V, 1MHz
Resistance @ If, F: -
Power Dissipation (Max): -
Operating Temperature: 125°C (TJ)
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

pacchetto: SC-75, SOT-416

Azione3.808

TA78DS05CP,6NSNF(J

Toshiba Semiconductor and Storage

IC REG LINEAR 30MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 30mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

pacchetto: TO-226-3, TO-92-3 Long Body

Azione5.424

TCR3DM105,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 1.05V 300MA 4DFN

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.05V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): 65µA ~ 78µA
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-UDFN Exposed Pad
Supplier Device Package: 4-DFN (1x1)

pacchetto: 4-UDFN Exposed Pad

Azione82.116

74HC123D(BJ)

Toshiba Semiconductor and Storage

IC MULTIVIBRATR DUAL MONO 16SOIC

Logic Type: Monostable
Independent Circuits: 2
Schmitt Trigger Input: Yes
Propagation Delay: 40ns
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

pacchetto: 16-SOIC (0.154", 3.90mm Width)

Azione7.696

TC74LCX373FTELM

Toshiba Semiconductor and Storage

IC LATCH OCTAL D-TYPE 20-TSSOP

Logic Type: D-Type Latch
Circuit: 8:8
Output Type: Tri-State
Voltage - Supply: 1.65 V ~ 3.6 V
Independent Circuits: 1
Delay Time - Propagation: 1.5ns
Current - Output High, Low: 24mA, 24mA
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

pacchetto: 20-TSSOP (0.173", 4.40mm Width)

Azione2.100

TC7WH02FU,LJ(CT

Toshiba Semiconductor and Storage

IC GATE NOR 2CH 2-INP SM8

Logic Type: NOR Gate
Number of Circuits: 2
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: -
Logic Level - High: -
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Azione7.040

TMP87P808MG(KYZ)

Toshiba Semiconductor and Storage

IC MCU 8BIT 8KB OTP 28SOP

Core Processor: 870
Core Size: 8-Bit
Speed: 8MHz
Connectivity: -
Peripherals: -
Number of I/O: 20
Program Memory Size: 8KB (8K x 8)
Program Memory Type: OTP
EEPROM Size: -
RAM Size: 256 x 8
Voltage - Supply (Vcc/Vdd): 2.7 V ~ 5.5 V
Data Converters: A/D 6x8b
Oscillator Type: External
Operating Temperature: -30°C ~ 70°C (TA)
Mounting Type: -
Package / Case: 28-SOIC (0.345", 8.77mm Width)
Supplier Device Package: 28-SOP

pacchetto: 28-SOIC (0.345", 8.77mm Width)

Azione5.072

LTA150B851F

Toshiba Semiconductor and Storage

LCD 15" 1024X768 XGA LVDS

Display Type: TFT - Color
Display Mode: Transmissive
Touchscreen: -
Diagonal Screen Size: 15" (381.00mm)
Viewing Area: 304.13mm W x 228.10mm H
Backlight: CCFL
Dot Pixels: 1024 x 768 (XGA)
Interface: LVDS
Graphics Color: Red, Green, Blue (RGB)
Background Color: -

pacchetto: -

Azione8.982

DF3A3.6FV(TPL3,Z)

Toshiba Semiconductor and Storage

TVS DIODE 1.8VWM VESM

Type: Zener
Unidirectional Channels: 2
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 1.8V
Voltage - Breakdown (Min): 3.4V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 110pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

pacchetto: SOT-723

Azione2.646

TLP170A(F)

Toshiba Semiconductor and Storage

IC PHOTORELAY MOSFET 4-SOP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 2 Ohm
Load Current: 400mA
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 60 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 4-SOP (0.173", 4.40mm)
Supplier Device Package: 4-SOP (2.54mm)
Relay Type: Relay

pacchetto: 4-SOP (0.173", 4.40mm)

Azione19.560

TLP590B(C,F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 2.5KV PHVOLT 6-DIP

Number of Channels: 1
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): -
Current Transfer Ratio (Max): -
Turn On / Turn Off Time (Typ): 200µs, 1ms
Rise / Fall Time (Typ): -
Input Type: DC
Output Type: Photovoltaic
Voltage - Output (Max): 7V
Current - Output / Channel: 12µA
Voltage - Forward (Vf) (Typ): 1.4V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): -
Operating Temperature: -55°C ~ 125°C
Mounting Type: Through Hole
Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
Supplier Device Package: 6-DIP, 5 Lead

pacchetto: 6-DIP (0.300", 7.62mm), 5 Leads

Azione8.064

74HC126D

Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 6V 14SOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Number of Bits per Element: 1
Input Type: -
Output Type: 3-State
Current - Output High, Low: 7.8mA, 7.8mA
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOP

pacchetto: 14-SOIC (0.154", 3.90mm Width)

Azione14.988

TCR3UG12A,LF

Toshiba Semiconductor and Storage

IC REG LIN 1.2V 300MA 4WCSP-F

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.857V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): 580nA
Current - Supply (Max): -
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Supplier Device Package: 4-WCSP-F (0.65x0.65)

pacchetto: 4-XFBGA, WLCSP

Azione52.242

XPW6R30ANB-L1XHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 45A 8DSOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-DSOP Advance
Package / Case: 8-PowerVDFN

pacchetto: -

Azione2.286

TK190E65Z-S1X

Toshiba Semiconductor and Storage

650V DTMOS VI TO-220 190MOHM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 610µA
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

pacchetto: -

Azione363

TCR2LN21-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=2.1V I=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.1V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.54V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 2 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

pacchetto: -

Azione26.079