Pagina 66 - Prodotti Toshiba Semiconductor and Storage

Numero di parte	Produttore	Descrizione	pacchetto	Azione
GT60N321(Q)	Toshiba Semiconductor and Storage	IGBT 1000V 60A 170W TO3P LH IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A Power - Max: 170W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 330ns/700ns Test Condition: - Reverse Recovery Time (trr): 2.5µs Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(LH)	pacchetto: TO-3PL	Azione22.140
TPC8126,LQ(CM	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 11A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V Vgs (Max): +20V, -25V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	pacchetto: 8-SOIC (0.173", 4.40mm Width)	Azione5.888
TJ50S06M3L(T6L1,NQ	Toshiba Semiconductor and Storage	MOSFET P-CH 60V 50A DPAK-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6290pF @ 10V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 25A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione2.112
2SA949-Y,ONK-1F(J	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	pacchetto: TO-226-3, TO-92-3 Long Body	Azione2.240
2SA1020-Y(T6CN,A,F	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	pacchetto: TO-226-3, TO-92-3 Long Body	Azione2.768
RN1106CT(TPL3)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.05W CST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	pacchetto: SC-101, SOT-883	Azione7.456
RN4981,LF(CT	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100µA (ICBO) Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione22.758
TBD62502AFWG,EL	Toshiba Semiconductor and Storage	IC LOAD SWITCH 7CH 0.3A 16PSOP Switch Type: General Purpose Number of Outputs: 7 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: N-Channel Interface: On/Off Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.75A Rds On (Typ): - Input Type: Inverting Features: - Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOP	pacchetto: 16-SOIC (0.154", 3.90mm Width)	Azione17.952
TB62208FNG,C8,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 48HTSSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: DMOS Step Resolution: 1, 1/2 Applications: General Purpose Current - Output: 1.8A Voltage - Supply: 4.5 V ~ 5.5 V Voltage - Load: 10 V ~ 38 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad Supplier Device Package: 48-HTSSOP	pacchetto: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad	Azione4.704
THGBMHG7C2LBAWR	Toshiba Semiconductor and Storage	IC FLASH 128GBIT 52MHZ 169BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Clock Frequency: 52MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	pacchetto: 153-WFBGA	Azione5.040
TC74VHC595FK(EL,K)	Toshiba Semiconductor and Storage	IC 8-BIT SHIFT REGISTER 16VSSOP Logic Type: Shift Register Output Type: Tri-State Number of Elements: 1 Number of Bits per Element: 8 Function: Serial to Parallel Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-VFSOP (0.118", 3.00mm Width) Supplier Device Package: 16-VSSOP	pacchetto: 16-VFSOP (0.118", 3.00mm Width)	Azione20.364
74VHC125FT	Toshiba Semiconductor and Storage	IC BUS BUFFER QUAD N-INV 14TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 4 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP	pacchetto: 14-TSSOP (0.173", 4.40mm Width)	Azione3.712
TL1WK-NW1,LCS	Toshiba Semiconductor and Storage	LED LETERAS COOL WHT 5000K 2SMD Color: White, Cool CCT (K): 5000K Flux @ 85°C, Current - Test: - Flux @ 25°C, Current - Test: 22 lm (Typ) Current - Test: 180mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 130 lm/W CRI (Color Rendering Index): 80 Current - Max: 180mA Viewing Angle: 165° Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: SMD Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm) Height - Seated (Max): 0.015" (0.39mm)	pacchetto: 2-SMD, No Lead	Azione6.714
TLP3241(TP15,F)	Toshiba Semiconductor and Storage	PHOTORELAY 40V 4-SSOP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 10 Ohm Load Current: 140mA Voltage - Input: 1.3VDC Voltage - Load: 0 ~ 40 V Mounting Type: Surface Mount Termination Style: SMD (SMT) Tab Package / Case: 4-SMD (0.165", 4.20mm) Supplier Device Package: 4-SSOP Relay Type: Relay	pacchetto: 4-SMD (0.165", 4.20mm)	Azione8.118
TLP293-4(4LGBTPE	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS SO16 Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 500µA Current Transfer Ratio (Max): 600% @ 500µA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	pacchetto: 16-SOIC (0.179", 4.55mm Width)	Azione5.454
TLP7930(F	Toshiba Semiconductor and Storage	ISOLATION AMPLIFIER; DIGITAL OUT Type: - Number of Channels: 1 Resolution (Bits): - Sampling Rate (Per Second): - Data Interface: - Voltage Supply Source: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione5.728
TMPM361F10FG(C,J)	Toshiba Semiconductor and Storage	INTEGRATED CIRCUIT MICROCONTROLL Core Processor: - Core Size: - Speed: - Connectivity: - Peripherals: - Number of I/O: - Program Memory Size: - Program Memory Type: - EEPROM Size: - RAM Size: - Voltage - Supply (Vcc/Vdd): - Data Converters: - Oscillator Type: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione5.760
TMPM067FWQG(EL,Z)	Toshiba Semiconductor and Storage	TX FAMILY MCU Core Processor: ARM® Cortex®-M0 Core Size: 32-Bit Speed: 24MHz Connectivity: I²C, SIO, SPI, UART/USART, USB Peripherals: DMA, LVD, POR, WDT Number of I/O: 32 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.8 V ~ 3.6 V Data Converters: A/D 8x10b Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-QFN (7x7)	pacchetto: 48-VFQFN Exposed Pad	Azione31.668
TB9057FG	Toshiba Semiconductor and Storage	AUTOMOTIVE MOTOR H-BRIDGE DRIVER Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Function: Driver Output Configuration: Pre-Driver Interface: PWM Technology: Bi-CMOS Step Resolution: - Applications: Automotive Current - Output: - Voltage - Supply: 5V ~ 21V Voltage - Load: - Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 48-LQFP Supplier Device Package: 48-LQFP (7x7)	pacchetto: 48-LQFP	Azione7.232
RN2304-LF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SC70 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	pacchetto: -	Azione11.280
TC78H651FNG-EL	Toshiba Semiconductor and Storage	BRUSHED MOTOR DRIVER IC, 2-CHANN Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: - Technology: DMOS Step Resolution: - Applications: General Purpose Current - Output: 1.5A Voltage - Supply: 1.8V ~ 6V Voltage - Load: 1.8V ~ 6V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP	pacchetto: -	Azione12.000
TB9058FNG-EL	Toshiba Semiconductor and Storage	AUTOMOTIVE H SWITCH MOTOR DRIVER Motor Type - Stepper: - Motor Type - AC, DC: Servo DC Function: Controller - Commutation, Direction Management Output Configuration: Half Bridge (2) Interface: PWM Technology: Bi-CMOS Step Resolution: - Applications: - Current - Output: 2A Voltage - Supply: 7V ~ 18V Voltage - Load: 0.5V ~ 12V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 24-LSSOP (0.220", 5.60mm Width) Supplier Device Package: 24-SSOP	pacchetto: -	Azione1.407
RN1311-LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SC70 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	pacchetto: -	Azione9.000
1N4148WT-L3F-B	Toshiba Semiconductor and Storage	100 V/0.25 A SWITCHING DIODE, SO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Current - Reverse Leakage @ Vr: 200 nA @ 80 V Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: 150°C	pacchetto: -	Request a Quote
TW027N65C-S1F	Toshiba Semiconductor and Storage	G3 650V SIC-MOSFET TO-247 27MOH FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 29A, 18V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	pacchetto: -	Azione36
TK12P60W-RVQ-S	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 11.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 600µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacchetto: -	Request a Quote
S1PA7-UD	Toshiba Semiconductor and Storage	IGBT TRANS MODULE TO3PN IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote
RN2103MFV-L3F-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	pacchetto: -	Azione240

GT60N321(Q)

Toshiba Semiconductor and Storage

IGBT 1000V 60A 170W TO3P LH

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1000V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
Power - Max: 170W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 330ns/700ns
Test Condition: -
Reverse Recovery Time (trr): 2.5µs
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Supplier Device Package: TO-3P(LH)

pacchetto: TO-3PL

Azione22.140

TPC8126,LQ(CM

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 11A 8SOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V
Vgs (Max): +20V, -25V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 5.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP (5.5x6.0)
Package / Case: 8-SOIC (0.173", 4.40mm Width)

pacchetto: 8-SOIC (0.173", 4.40mm Width)

Azione5.888

TJ50S06M3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 50A DPAK-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6290pF @ 10V
Vgs (Max): +10V, -20V
FET Feature: -
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 25A, 10V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione2.112

2SA949-Y,ONK-1F(J

Toshiba Semiconductor and Storage

TRANS PNP 50MA 150V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

pacchetto: TO-226-3, TO-92-3 Long Body

Azione2.240

2SA1020-Y(T6CN,A,F

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

pacchetto: TO-226-3, TO-92-3 Long Body

Azione2.768

RN1106CT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 50mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

pacchetto: SC-101, SOT-883

Azione7.456

RN4981,LF(CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
Frequency - Transition: 250MHz, 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione22.758

TBD62502AFWG,EL

Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.3A 16PSOP

Switch Type: General Purpose
Number of Outputs: 7
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.75A
Rds On (Typ): -
Input Type: Inverting
Features: -
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOP

pacchetto: 16-SOIC (0.154", 3.90mm Width)

Azione17.952

TB62208FNG,C8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48HTSSOP

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: DMOS
Step Resolution: 1, 1/2
Applications: General Purpose
Current - Output: 1.8A
Voltage - Supply: 4.5 V ~ 5.5 V
Voltage - Load: 10 V ~ 38 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Supplier Device Package: 48-HTSSOP

pacchetto: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad

Azione4.704

THGBMHG7C2LBAWR

Toshiba Semiconductor and Storage

IC FLASH 128GBIT 52MHZ 169BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: MMC
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-WFBGA
Supplier Device Package: 153-WFBGA (11.5x13)

pacchetto: 153-WFBGA

Azione5.040

TC74VHC595FK(EL,K)

Toshiba Semiconductor and Storage

IC 8-BIT SHIFT REGISTER 16VSSOP

Logic Type: Shift Register
Output Type: Tri-State
Number of Elements: 1
Number of Bits per Element: 8
Function: Serial to Parallel
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Supplier Device Package: 16-VSSOP

pacchetto: 16-VFSOP (0.118", 3.00mm Width)

Azione20.364

74VHC125FT

Toshiba Semiconductor and Storage

IC BUS BUFFER QUAD N-INV 14TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP

pacchetto: 14-TSSOP (0.173", 4.40mm Width)

Azione3.712

TL1WK-NW1,LCS

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 5000K 2SMD

Color: White, Cool
CCT (K): 5000K
Flux @ 85°C, Current - Test: -
Flux @ 25°C, Current - Test: 22 lm (Typ)
Current - Test: 180mA
Voltage - Forward (Vf) (Typ): 2.8V
Lumens/Watt @ Current - Test: 130 lm/W
CRI (Color Rendering Index): 80
Current - Max: 180mA
Viewing Angle: 165°
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: SMD
Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm)
Height - Seated (Max): 0.015" (0.39mm)

pacchetto: 2-SMD, No Lead

Azione6.714

TLP3241(TP15,F)

Toshiba Semiconductor and Storage

PHOTORELAY 40V 4-SSOP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 10 Ohm
Load Current: 140mA
Voltage - Input: 1.3VDC
Voltage - Load: 0 ~ 40 V
Mounting Type: Surface Mount
Termination Style: SMD (SMT) Tab
Package / Case: 4-SMD (0.165", 4.20mm)
Supplier Device Package: 4-SSOP
Relay Type: Relay

pacchetto: 4-SMD (0.165", 4.20mm)

Azione8.118

TLP293-4(4LGBTPE

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

Number of Channels: 4
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Current Transfer Ratio (Max): 600% @ 500µA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Supplier Device Package: 16-SO

pacchetto: 16-SOIC (0.179", 4.55mm Width)

Azione5.454

TLP7930(F

Toshiba Semiconductor and Storage

ISOLATION AMPLIFIER; DIGITAL OUT

Type: -
Number of Channels: 1
Resolution (Bits): -
Sampling Rate (Per Second): -
Data Interface: -
Voltage Supply Source: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Azione5.728

TMPM361F10FG(C,J)

Toshiba Semiconductor and Storage

INTEGRATED CIRCUIT MICROCONTROLL

Core Processor: -
Core Size: -
Speed: -
Connectivity: -
Peripherals: -
Number of I/O: -
Program Memory Size: -
Program Memory Type: -
EEPROM Size: -
RAM Size: -
Voltage - Supply (Vcc/Vdd): -
Data Converters: -
Oscillator Type: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Azione5.760

TMPM067FWQG(EL,Z)

Toshiba Semiconductor and Storage

TX FAMILY MCU

Core Processor: ARM® Cortex®-M0
Core Size: 32-Bit
Speed: 24MHz
Connectivity: I²C, SIO, SPI, UART/USART, USB
Peripherals: DMA, LVD, POR, WDT
Number of I/O: 32
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.8 V ~ 3.6 V
Data Converters: A/D 8x10b
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-QFN (7x7)

pacchetto: 48-VFQFN Exposed Pad

Azione31.668

TB9057FG

Toshiba Semiconductor and Storage

AUTOMOTIVE MOTOR H-BRIDGE DRIVER

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Function: Driver
Output Configuration: Pre-Driver
Interface: PWM
Technology: Bi-CMOS
Step Resolution: -
Applications: Automotive
Current - Output: -
Voltage - Supply: 5V ~ 21V
Voltage - Load: -
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Supplier Device Package: 48-LQFP (7x7)

pacchetto: 48-LQFP

Azione7.232

RN2304-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

pacchetto: -

Azione11.280

TC78H651FNG-EL

Toshiba Semiconductor and Storage

BRUSHED MOTOR DRIVER IC, 2-CHANN

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: -
Technology: DMOS
Step Resolution: -
Applications: General Purpose
Current - Output: 1.5A
Voltage - Supply: 1.8V ~ 6V
Voltage - Load: 1.8V ~ 6V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP

pacchetto: -

Azione12.000

TB9058FNG-EL

Toshiba Semiconductor and Storage

AUTOMOTIVE H SWITCH MOTOR DRIVER

Motor Type - Stepper: -
Motor Type - AC, DC: Servo DC
Function: Controller - Commutation, Direction Management
Output Configuration: Half Bridge (2)
Interface: PWM
Technology: Bi-CMOS
Step Resolution: -
Applications: -
Current - Output: 2A
Voltage - Supply: 7V ~ 18V
Voltage - Load: 0.5V ~ 12V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Supplier Device Package: 24-SSOP

pacchetto: -

Azione1.407

RN1311-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

pacchetto: -

Azione9.000

1N4148WT-L3F-B

Toshiba Semiconductor and Storage

100 V/0.25 A SWITCHING DIODE, SO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C

pacchetto: -

Request a Quote

TW027N65C-S1F

Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247 27MOH

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29A, 18V
Operating Temperature: 175°C
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

pacchetto: -

Azione36

TK12P60W-RVQ-S

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 11.5A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

Request a Quote

S1PA7-UD

Toshiba Semiconductor and Storage

IGBT TRANS MODULE TO3PN

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

RN2103MFV-L3F-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

pacchetto: -

Azione240