Prodotti Toshiba Semiconductor and Storage

TK4A50D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 4A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

SSM3K315T(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 6A TSM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 27.6 mOhm @ 4A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSM
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

TPCA8031-H(TE12L,Q

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 24A SOP-8 ADV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

pacchetto: 8-PowerVDFN

TK14A65W,S5X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13.7A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 690µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.9A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack, Isolated Tab

pacchetto: TO-220-3 Full Pack, Isolated Tab

2SC4793,YHF(M

Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 230V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
• Power - Max: 2W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS

pacchetto: TO-220-3 Full Pack

RN2603(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SM6

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: SM6

pacchetto: SC-74, SOT-457

RN2502(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SMV

• Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

pacchetto: SC-74A, SOT-753

RN1507(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.3W SMV

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

pacchetto: SC-74A, SOT-753

CBS10S40,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1A CST2B

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150µA @ 40V
• Capacitance @ Vr, F: 120pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: CST2B
• Operating Temperature - Junction: 125°C (Max)

pacchetto: 2-SMD, No Lead

TA76431S,T6WNLF(J

Toshiba Semiconductor and Storage

IC REG LINEAR 100MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 100mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

pacchetto: TO-226-3, TO-92-3 Long Body

TA58L08F(TE16L1,NQ

Toshiba Semiconductor and Storage

IC REG LINEAR 8V 250MA PW-MOLD

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 29V
• Voltage - Output (Min/Fixed): 8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.4V @ 200mA
• Current - Output: 250mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1mA ~ 50mA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PW-MOLD

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

TC74HC165AF(EL,F)

Toshiba Semiconductor and Storage

IC 8-BIT SHIFT REGISTER 16SOP

• Logic Type: Shift Register
• Output Type: -
• Number of Elements: 1
• Number of Bits per Element: 8
• Function: Parallel or Serial to Serial
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 16-SOP

pacchetto: 16-SOIC (0.209", 5.30mm Width)

TC7SH14F,LJ(CT

Toshiba Semiconductor and Storage

IC INVERTER SCHMITT TRIG SMV

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: Schmitt Trigger
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.9 V ~ 1.65 V
• Logic Level - High: 2.2 V ~ 3.85 V
• Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SMV
• Package / Case: SC-74A, SOT-753

pacchetto: SC-74A, SOT-753

TC7SZ05FU,LJ(CT

Toshiba Semiconductor and Storage

IC INVERTER OPEN-DRAIN 5-SSOP

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: Open Drain
• Voltage - Supply: 1.8 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: -, 32mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: USV
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

pacchetto: 5-TSSOP, SC-70-5, SOT-353

TC74ACT240F(EL,F)

Toshiba Semiconductor and Storage

IC INVERTER DUAL 4-INPUT 20SOP

• Logic Type: Buffer, Inverting
• Number of Elements: 2
• Number of Bits per Element: 4
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 20-SOP

pacchetto: 20-SOIC (0.209", 5.30mm Width)

TC75S55F,LF

Toshiba Semiconductor and Storage

IC OPAMP GP 160KHZ 5SSOP

• Amplifier Type: General Purpose
• Number of Circuits: 1
• Output Type: -
• Slew Rate: 0.08 V/µs
• Gain Bandwidth Product: 160kHz
• -3db Bandwidth: -
• Current - Input Bias: 1pA
• Voltage - Input Offset: 2mV
• Current - Supply: 10µA
• Current - Output / Channel: 450µA
• Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

pacchetto: SC-74A, SOT-753

DF2S8.2FS,L3M

Toshiba Semiconductor and Storage

TVS DIODE 6.5VWM SOD923

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 6.5V (Max)
• Voltage - Breakdown (Min): 7.7V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 20pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SOD-923
• Supplier Device Package: SOD-923

pacchetto: SOD-923

TLP227G-2(F)

Toshiba Semiconductor and Storage

PHOTORELAY 2FORMA 350V 8DIP

• Circuit: DPST (2 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 35 Ohm
• Load Current: 120mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 350 V
• Mounting Type: Through Hole
• Termination Style: PC Pin
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP
• Relay Type: Relay

pacchetto: 8-DIP (0.300", 7.62mm)

TLP293-4(TPR,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

• Number of Channels: 4
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 50% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.179", 4.55mm Width)
• Supplier Device Package: 16-SO

pacchetto: 16-SOIC (0.179", 4.55mm Width)

74HCT4051D

Toshiba Semiconductor and Storage

IC MUX/DEMUX 8X1 16SOIC

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: 8:1
• Number of Circuits: 1
• On-State Resistance (Max): 120 Ohm
• Channel-to-Channel Matching (ΔRon): 6 Ohm
• Voltage - Supply, Single (V+): 4.5 V ~ 5.5 V
• Voltage - Supply, Dual (V±): ±1 V ~ 5 V
• Switch Time (Ton, Toff) (Max): 39ns, 32ns
• -3db Bandwidth: 180MHz
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 3.5pF
• Current - Leakage (IS(off)) (Max): 400nA
• Crosstalk: -
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

pacchetto: 16-SOIC (0.154", 3.90mm Width)

TCR3DF31,LM(CT

Toshiba Semiconductor and Storage

300MA LDO VOUT=3.1V DROPOUT=230M

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.1V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.27V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Inrush Current, Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

pacchetto: SC-74A, SOT-753

RN2902FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): 10kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

pacchetto: -

2SC5359-O-Q

Toshiba Semiconductor and Storage

TRANS NPN 230V 15A TO3P

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 15 A
• Voltage - Collector Emitter Breakdown (Max): 230 V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
• Current - Collector Cutoff (Max): 5µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
• Power - Max: 180 W
• Frequency - Transition: 30MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PL
• Supplier Device Package: TO-3P(L)

pacchetto: -

CRS15-TE85L-Q-M

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 3A S-FLAT

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 30 V
• Capacitance @ Vr, F: 90pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: S-FLAT (1.6x3.5)
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: -

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2SA2059-TE12L-F

Toshiba Semiconductor and Storage

POWER TRANSISTOR PW-MINI PC=2.5W

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3 A
• Voltage - Collector Emitter Breakdown (Max): 20 V
• Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
• Power - Max: 1 W
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PW-MINI

pacchetto: -

TW048Z65C-S1F

Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247-4L 48

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 5V @ 1.6mA
• Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 132W (Tc)
• Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 18V
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-4L(X)
• Package / Case: TO-247-4

pacchetto: -

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SSM6J50TU-LF

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2.5A UF6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: UF6
• Package / Case: 6-SMD, Flat Leads

pacchetto: -

TRS12V65H-LQ

Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 12A DFN8X8

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 120 µA @ 650 V
• Capacitance @ Vr, F: 778pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 4-VSFN Exposed Pad
• Supplier Device Package: 4-DFN-EP (8x8)
• Operating Temperature - Junction: 175°C

pacchetto: -