Prodotti Toshiba Semiconductor and Storage

SSM3K72CTC,L3F

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 0.15A CST3C

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: CST3C
• Package / Case: SC-101, SOT-883

pacchetto: SC-101, SOT-883

2SA1429-Y(T2TR,F,M

Toshiba Semiconductor and Storage

TRANS PNP 2A 80V SC71

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
• Power - Max: 1W
• Frequency - Transition: 80MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: SC-71
• Supplier Device Package: MSTM

pacchetto: SC-71

2SA1425-Y,T2F(J

Toshiba Semiconductor and Storage

TRANS PNP 800MA 120V SC71

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
• Power - Max: 1W
• Frequency - Transition: 120MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: SC-71
• Supplier Device Package: MSTM

pacchetto: SC-71

RN1962FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

pacchetto: SOT-563, SOT-666

TA78L008AP(6DNS,FM

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

pacchetto: TO-226-3, TO-92-3 Long Body

TCR5AM08,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 0.8V 500MA 5DFNB

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 55µA ~ 68µA
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: 5-DFNB (1.2x1.2)

pacchetto: 4-XDFN Exposed Pad

TB7101AF(T5L1.5,F)

Toshiba Semiconductor and Storage

IC REG BUCK 1.5V 1A SYNC 8SON

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Fixed
• Number of Outputs: 1
• Voltage - Input (Min): 2.7V
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.5V
• Voltage - Output (Max): -
• Current - Output: 1A
• Frequency - Switching: 1MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: PS-8 (2.9x2.4)

pacchetto: 8-SMD, Flat Lead

TBD62064AFAG,EHZ

Toshiba Semiconductor and Storage

IC DRVR TRANS ARRAY 4-CH 24SSOP

• Switch Type: General Purpose
• Number of Outputs: 4
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 50V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.25A
• Rds On (Typ): 430 mOhm
• Input Type: Inverting
• Features: -
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 24-SOP (0.236", 6.00mm Width)
• Supplier Device Package: 24-SSOP

pacchetto: 24-SOP (0.236", 6.00mm Width)

TB6674PG(C,8,Z,HZ)

Toshiba Semiconductor and Storage

TWO PHASE BIPOLAR STEPPING MOTOR

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 350mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 2.7 V ~ 22 V
• Operating Temperature: -30°C ~ 75°C (TA)
• Mounting Type: Through Hole
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-DIP

pacchetto: 16-DIP (0.300", 7.62mm)

TB6560AHQ,8

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 25HZIP

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
• Applications: General Purpose
• Current - Output: 3A
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 4.5 V ~ 34 V
• Operating Temperature: -30°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 25-SIP, Formed Leads
• Supplier Device Package: 25-HZIP

pacchetto: 25-SIP, Formed Leads

TC58NVG1S3HBAI4

Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 63FBGA

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM - NAND
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 63-VFBGA
• Supplier Device Package: 63-TFBGA (9x11)

pacchetto: 63-VFBGA

TC58CYG0S3HQAIE

Toshiba Semiconductor and Storage

1GB SERIAL NAND 24NM SOP16 1.8V

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 1Gb (128M x 8)
• Memory Interface: SPI
• Clock Frequency: 104MHz
• Write Cycle Time - Word, Page: -
• Access Time: 155µs
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOP

pacchetto: 16-SOIC (0.295", 7.50mm Width)

TC7S02F,LF

Toshiba Semiconductor and Storage

IC GATE NOR 1CH 2-INP SMV

• Logic Type: NOR Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 2.6mA, 2.6mA
• Logic Level - Low: 0.5 V ~ 1.8 V
• Logic Level - High: 1.5 V ~ 4.2 V
• Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SMV
• Package / Case: SC-74A, SOT-753

pacchetto: SC-74A, SOT-753

TD62004APG,N

Toshiba Semiconductor and Storage

IC DRIVER DARL SNK TTL 7CH 16DIP

• Type: Driver
• Protocol: -
• Number of Drivers/Receivers: 7/0
• Duplex: -
• Receiver Hysteresis: -
• Data Rate: -
• Voltage - Supply: 0 V ~ 50 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-DIP

pacchetto: 16-DIP (0.300", 7.62mm)

DF2B5M4CT,L3F

Toshiba Semiconductor and Storage

ESD DIODE BI-DIRECTIONAL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 3.6V (Max)
• Voltage - Breakdown (Min): 4V
• Voltage - Clamping (Max) @ Ipp: 15V
• Current - Peak Pulse (10/1000µs): 2A (8/20µs)
• Power - Peak Pulse: 30W
• Power Line Protection: No
• Applications: -
• Capacitance @ Frequency: 0.2pF @ 1MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: CST2

pacchetto: SOD-882

TC78S600FNG,C,EL

Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 20SSOP

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: 1/2, 1/4, 1/8, 1/16
• Applications: General Purpose
• Current - Output: 800mA
• Voltage - Supply: 2.7 V ~ 5.5 V
• Voltage - Load: 2.5 V ~ 15 V
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-LSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-SSOP

pacchetto: 20-LSSOP (0.173", 4.40mm Width)

74LCX126FT

Toshiba Semiconductor and Storage

IC BUF NON-INVERT 3.6V 14TSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 4
• Number of Bits per Element: 1
• Input Type: -
• Output Type: 3-State
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 14-TSSOP

pacchetto: 14-TSSOP (0.173", 4.40mm Width)

TMPM36BFYFG(DBB)

Toshiba Semiconductor and Storage

TX FAMILY MCU

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 80MHz
• Connectivity: EBI/EMI, I²C, IrDA, Microwire, SIO, SPI, SSI, SSP, UART/USART
• Peripherals: DMA, LVD, POR, WDT
• Number of I/O: 72
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 66K x 8
• Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 16x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

pacchetto: 100-LQFP

TCR8BM09A-L3F

Toshiba Semiconductor and Storage

800MA LDO, VOUT=0.9V, DROPOUT=17

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.9V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.22V @ 800mA
• Current - Output: 800mA
• Current - Quiescent (Iq): 36 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Current Limit, Enable
• Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: 5-DFNB (1.2x1.2)

pacchetto: -

2SD1223-TE16L1-NQ

Toshiba Semiconductor and Storage

TRANS NPN DARL 80V 4A PW-MOLD

• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 4 A
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 6mA, 3A
• Current - Collector Cutoff (Max): 20µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 2V
• Power - Max: 1 W
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: PW-MOLD

pacchetto: -

RN1906-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) NP

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

pacchetto: -

TC7WH04FU-TE12L

Toshiba Semiconductor and Storage

IC INVERTER 8-SSOP

• Logic Type: Inverter
• Number of Circuits: 3
• Number of Inputs: 1
• Features: -
• Voltage - Supply: 2V ~ 5.5V
• Current - Quiescent (Max): 2 µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.5V
• Logic Level - High: 3.85V
• Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SSOP
• Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

pacchetto: -

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RN2904FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

pacchetto: -

TCR2LE085-LM-CT

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.85V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.58V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 2 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

pacchetto: -

Request a Quote

RN2904-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

pacchetto: -

TK110E10PL-S1X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 300µA
• Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 87W (Tc)
• Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

pacchetto: -

RN4988-TE85L-F

Toshiba Semiconductor and Storage

NPN + PNP BRT Q1BSR=22KOHM Q1BER

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz, 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

pacchetto: -

SSM3K16CT-L3F

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 100MA CST3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
• Vgs(th) (Max) @ Id: 1.1V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 100mW (Ta)
• Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: CST3
• Package / Case: SC-101, SOT-883

pacchetto: -