Prodotti Toshiba Semiconductor and Storage

TPC8A06-H(TE12LQM)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 12A 8SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 10.1 mOhm @ 6A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP (5.5x6.0)
• Package / Case: 8-SOIC (0.173", 4.40mm Width)

pacchetto: 8-SOIC (0.173", 4.40mm Width)

TK40E10K3,S1X(S

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 40A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

pacchetto: TO-220-3

TK34A10N1,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 34A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 17A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack, Isolated Tab

pacchetto: TO-220-3 Full Pack, Isolated Tab

T2N7002AK,LM

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 0.2A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 320mW (Ta)
• Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

TK6A65D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 5A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 1.11 Ohm @ 3A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

TK13A60D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 13A TO220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 430 mOhm @ 6.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

SSM6N36FE,LM

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.5A ES6

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 500mA
• Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
• Power - Max: 150mW
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6 (1.6x1.6)

pacchetto: SOT-563, SOT-666

2SC3668-Y,T2WNLF(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V SC71

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
• Power - Max: 1W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: SC-71
• Supplier Device Package: MSTM

pacchetto: SC-71

RN2903,LF

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

pacchetto: 6-TSSOP, SC-88, SOT-363

CTS521,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 200MA CST2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30µA @ 30V
• Capacitance @ Vr, F: 25pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: CST2
• Operating Temperature - Junction: 125°C (Max)

pacchetto: SOD-882

TA78L005AP,T6WNF(J

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

pacchetto: TO-226-3, TO-92-3 Long Body

TCR2EF28,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 2.8V 200MA SMV

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA
• PSRR: 73dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

pacchetto: SC-74A, SOT-753

TCR2LN28,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 2.8V 200MA 4-SDFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 2µA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

pacchetto: 4-XFDFN Exposed Pad

TC74LVX573FTEL

Toshiba Semiconductor and Storage

IC LATCH OCTAL D-TYPE 20-TSSOP

• Logic Type: D-Type Transparent Latch
• Circuit: 8:8
• Output Type: Tri-State
• Voltage - Supply: 2 V ~ 3.6 V
• Independent Circuits: 1
• Delay Time - Propagation: 5.9ns
• Current - Output High, Low: 4mA, 4mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

pacchetto: 20-TSSOP (0.173", 4.40mm Width)

TC75S59FE(TE85L,F)

Toshiba Semiconductor and Storage

IC COMP GP CMOS ESV

• Type: General Purpose
• Number of Elements: 1
• Output Type: Open Drain
• Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
• Voltage - Input Offset (Max): 7mV @ 5V
• Current - Input Bias (Max): 1pA
• Current - Output (Typ): 25mA
• Current - Quiescent (Max): 220µA
• CMRR, PSRR (Typ): -
• Propagation Delay (Max): 200ns
• Hysteresis: -
• Operating Temperature: -40°C ~ 85°C
• Package / Case: SOT-553
• Mounting Type: Surface Mount
• Supplier Device Package: ESV

pacchetto: SOT-553

TA75W558FU,LF

Toshiba Semiconductor and Storage

IC OPAMP GP 3MHZ 8SSOP

• Amplifier Type: General Purpose
• Number of Circuits: 2
• Output Type: -
• Slew Rate: 1 V/µs
• Gain Bandwidth Product: 3MHz
• -3db Bandwidth: -
• Current - Input Bias: 60nA
• Voltage - Input Offset: 500µV
• Current - Supply: 4mA
• Current - Output / Channel: 40mA
• Voltage - Supply, Single/Dual (±): ±4 V ~ 18 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
• Supplier Device Package: SM8

pacchetto: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

TL1WK-DW1,LCS

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 6500K 2SMD

• Color: White, Cool
• CCT (K): 6500K
• Flux @ 85°C, Current - Test: -
• Flux @ 25°C, Current - Test: 22 lm (Typ)
• Current - Test: 60mA
• Voltage - Forward (Vf) (Typ): 2.8V
• Lumens/Watt @ Current - Test: 130 lm/W
• CRI (Color Rendering Index): 80
• Current - Max: 180mA
• Viewing Angle: 165°
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: SMD
• Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm)
• Height - Seated (Max): 0.015" (0.39mm)

pacchetto: 2-SMD, No Lead

DF10G7M1N,LF

Toshiba Semiconductor and Storage

TVS DIODE 5VWM 12VC 10DFN

• Type: Steering (Rail to Rail)
• Unidirectional Channels: 4
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5V (Max)
• Voltage - Breakdown (Min): 6V
• Voltage - Clamping (Max) @ Ipp: 12V (Typ)
• Current - Peak Pulse (10/1000µs): 1A (8/20µs)
• Power - Peak Pulse: -
• Power Line Protection: Yes
• Applications: HDMI
• Capacitance @ Frequency: 0.3pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 10-UFDFN
• Supplier Device Package: 10-DFN (2.5x1)

pacchetto: 10-UFDFN

TLP558(F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV TRI-STATE 8DIP

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 2500Vrms
• Common Mode Transient Immunity (Min): 1kV/µs
• Input Type: DC
• Output Type: Tri-State
• Current - Output / Channel: 40mA
• Data Rate: 5Mbps
• Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
• Rise / Fall Time (Typ): 35ns, 20ns
• Voltage - Forward (Vf) (Typ): 1.55V
• Current - DC Forward (If) (Max): 10mA
• Voltage - Supply: 4.5 V ~ 20 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

pacchetto: 8-DIP (0.300", 7.62mm)

TLP155E(E)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV GATE DRIVER 6SO-5

• Technology: Optical Coupling
• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Common Mode Transient Immunity (Min): 15kV/µs
• Propagation Delay tpLH / tpHL (Max): 170ns, 170ns
• Pulse Width Distortion (Max): -
• Rise / Fall Time (Typ): 35ns, 15ns
• Current - Output High, Low: 400mA, 400mA
• Current - Peak Output: 600mA
• Voltage - Forward (Vf) (Typ): 1.55V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 10 V ~ 30 V
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
• Supplier Device Package: 6-SO, 5 Lead
• Approvals: CSA, cUL, UL

pacchetto: 6-SOIC (0.179", 4.55mm Width) 5 Leads

74VHC153FT

Toshiba Semiconductor and Storage

X31 PB-F VHS TSSOP 16 CMOS LOGIC

• Type: Multiplexer
• Circuit: 2 x 4:1
• Independent Circuits: 2
• Current - Output High, Low: 8mA, 8mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOPB

pacchetto: 16-TSSOP (0.173", 4.40mm Width)

TCR2LF08,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT0.8V DROPOUT220MV

• Output Configuration: -
• Output Type: -
• Number of Regulators: -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: -
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

TCR4DG33,LF

Toshiba Semiconductor and Storage

X34 LDO REGULATORS VOUT: 3.3V IO

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.263V @ 420mA
• Current - Output: 420mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFBGA, CSPBGA
• Supplier Device Package: 4-WCSPE (0.65x0.65)

pacchetto: 4-XFBGA, CSPBGA

TCR3UM18A-LF-SE

Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.457V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 680 nA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Current Limit, Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UDFN Exposed Pad
• Supplier Device Package: 4-DFN (1x1)

pacchetto: -

TCR2EN29-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=2.9V IOUT=200MA

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.9V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.21V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 60 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

pacchetto: -

TCR2DG26-LF

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.6V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.13V @ 100mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 70 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UFBGA, WLCSP
• Supplier Device Package: 4-WCSP (0.79x0.79)

pacchetto: -

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RN4908-LF-CT

Toshiba Semiconductor and Storage

PNP + NPN BRT Q1BSR10KOHM Q1BER4

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz, 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

pacchetto: -

TPCC8105-L1Q-CM

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 23A 8TSON

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
• Vgs (Max): +20V, -25V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta), 30W (Tc)
• Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSON Advance (3.3x3.3)
• Package / Case: 8-VDFN Exposed Pad

pacchetto: -

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