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Prodotti Taiwan Semiconductor Corporation

Record 4.299
Pagina  78/154
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
BZD27C11PHRHG
Taiwan Semiconductor Corporation

DIODE, ZENER, 11V, 1000MW, %, AE

  • Voltage - Zener (Nom) (Vz): 11V
  • Tolerance: ±5.45%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 7 Ohms
  • Current - Reverse Leakage @ Vr: 4µA @ 8.2V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
pacchetto: DO-219AB
Azione5.472
BZD27C47P RHG
Taiwan Semiconductor Corporation

DIODE, ZENER, 47V, 1000MW, %, SU

  • Voltage - Zener (Nom) (Vz): 47V
  • Tolerance: ±6.38%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 45 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 36V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
pacchetto: DO-219AB
Azione3.344
1SMB5940 M4G
Taiwan Semiconductor Corporation

DIODE, ZENER, 43V, 3000MW, 5%, D

  • Voltage - Zener (Nom) (Vz): 43V
  • Tolerance: ±5%
  • Power - Max: 3W
  • Impedance (Max) (Zzt): 53 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 32.7V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
pacchetto: DO-214AA, SMB
Azione4.688
1SMB5944HM4G
Taiwan Semiconductor Corporation

DIODE, ZENER, 62V, 3000MW, 5%, A

  • Voltage - Zener (Nom) (Vz): 62V
  • Tolerance: ±5%
  • Power - Max: 3W
  • Impedance (Max) (Zzt): 100 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 47.1V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
pacchetto: DO-214AA, SMB
Azione2.336
1M130Z A0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 130V, 1000MW, 5%,

  • Voltage - Zener (Nom) (Vz): 130V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 700 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 98.8V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
pacchetto: DO-204AL, DO-41, Axial
Azione5.056
TS20P03GHD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 20A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
pacchetto: 4-SIP, TS-6P
Azione5.120
TS8P05GHC2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 8A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
pacchetto: 4-SIP, TS-6P
Azione2.512
TS10P05G D2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 10A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
pacchetto: 4-SIP, TS-6P
Azione5.088
TS3552CS RLG
Taiwan Semiconductor Corporation

SWITCHING REGULATOR, DC-DC, BUCK

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 4.75V
  • Voltage - Input (Max): 23V
  • Voltage - Output (Min/Fixed): 0.925V
  • Voltage - Output (Max): 20V
  • Current - Output: 2A
  • Frequency - Switching: 350kHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.584
GBU607H
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 6A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: -
Azione3.000
BZY55B22-RBG
Taiwan Semiconductor Corporation

DIODE ZENER 22V 500MW 0805

  • Voltage - Zener (Nom) (Vz): 22 V
  • Tolerance: ±2%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 55 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 16 V
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 0805 (2012 Metric)
  • Supplier Device Package: 0805
pacchetto: -
Request a Quote
BZV55B16
Taiwan Semiconductor Corporation

MMELF, 500MW, 2%, SMALL SIGNAL Z

  • Voltage - Zener (Nom) (Vz): 16 V
  • Tolerance: ±2%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 40 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 12 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: Mini MELF
pacchetto: -
Request a Quote
ES1BFS
Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 1A SOD128

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 100 V
  • Capacitance @ Vr, F: 18pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione7.200
1PGSMB5939-R5G
Taiwan Semiconductor Corporation

DIODE ZENER 39V 3W DO214AA

  • Voltage - Zener (Nom) (Vz): 39 V
  • Tolerance: ±5%
  • Power - Max: 3 W
  • Impedance (Max) (Zzt): 45 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 29.7 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
pacchetto: -
Request a Quote
ES3GBH
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 3A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: 41pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione18.000
PU1BFS
Taiwan Semiconductor Corporation

25NS, 1A, 100V, ULTRA FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 100 V
  • Capacitance @ Vr, F: 19pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione84.000
S2GFL
Taiwan Semiconductor Corporation

2A, 400V, STANDARD RECOVERY RECT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione29.805
MBRF25150CT
Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 150V ITO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io) (per Diode): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 150 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
pacchetto: -
Request a Quote
SFF506GH
Taiwan Semiconductor Corporation

DIODE ARRAY GP 400V 5A ITO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io) (per Diode): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
pacchetto: -
Azione3.000
BZX55B16
Taiwan Semiconductor Corporation

DO-35, 500MW, 2%, SMALL SIGNAL Z

  • Voltage - Zener (Nom) (Vz): 16 V
  • Tolerance: ±2%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 40 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 12 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
pacchetto: -
Request a Quote
BZX55B2V4
Taiwan Semiconductor Corporation

DO-35, 500MW, 2%, SMALL SIGNAL Z

  • Voltage - Zener (Nom) (Vz): 2.4 V
  • Tolerance: ±2%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 85 Ohms
  • Current - Reverse Leakage @ Vr: 50 µA @ 1 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
pacchetto: -
Request a Quote
SK59C
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 90V 5A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 90 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
BZD27C27PWH
Taiwan Semiconductor Corporation

DIODE ZENER 27V 1W SOD123W

  • Voltage - Zener (Nom) (Vz): 27 V
  • Tolerance: ±5%
  • Power - Max: 1 W
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 20 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
pacchetto: -
Request a Quote
SK210AH
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 2A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione44.970
TS25P01GH
Taiwan Semiconductor Corporation

DIODE BRIDGE 50V 25A TS-6P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 35 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
pacchetto: -
Request a Quote
SR502H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
Request a Quote
SR510H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
LL4003G-L0
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote