Prodotti Taiwan Semiconductor Corporation

BZD27C91PHM2G

Taiwan Semiconductor Corporation

DIODE, ZENER, 91V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 90.5V
• Tolerance: ±6.07%
• Power - Max: 1W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 68V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacchetto: DO-219AB

BZD27C10P MTG

Taiwan Semiconductor Corporation

DIODE, ZENER, 10V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±6%
• Power - Max: 1W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 7µA @ 7.5V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacchetto: DO-219AB

BZD27C9V1PHRHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 9.1V, 1000MW, %, A

• Voltage - Zener (Nom) (Vz): 9.05V
• Tolerance: ±6.07%
• Power - Max: 1W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 5V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacchetto: DO-219AB

BZD27C43PHRHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 43V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±6.97%
• Power - Max: 1W
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 33V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacchetto: DO-219AB

BZD27C180P RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 180V, 1000MW, %, S

• Voltage - Zener (Nom) (Vz): 179.5V
• Tolerance: ±6.4%
• Power - Max: 1W
• Impedance (Max) (Zzt): 450 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 130V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacchetto: DO-219AB

1N4741AHR0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 11V, 1000MW, 5%, A

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 22 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 15.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

1SMA4758 M2G

Taiwan Semiconductor Corporation

DIODE, ZENER, 56V, 1000MW, %, DO

• Voltage - Zener (Nom) (Vz): 56V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 110 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 42.6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

pacchetto: DO-214AC, SMA

1N4757G R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 51V, 1000MW, 5%, D

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 38.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 200°C (TA)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

TSZL52C18 RWG

Taiwan Semiconductor Corporation

DIODE, ZENER, 18V, 200MW, 5%, 10

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 50 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 14V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 1005 (2512 Metric)
• Supplier Device Package: 1005

pacchetto: 1005 (2512 Metric)

TSZU52C11 RGG

Taiwan Semiconductor Corporation

DIODE, ZENER, 11V, 150MW, 5%, 06

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±5%
• Power - Max: 150mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 8.5V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0603

pacchetto: 0201 (0603 Metric)

BZX85C24 R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 24V, 1300MW, 5%, D

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±5%
• Power - Max: 1.3W
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 18V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

BZX79B5V1 A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 5.1V, 500MW, 2%, D

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 2mA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

pacchetto: DO-204AH, DO-35, Axial

TS50P05GHD2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 50A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

pacchetto: 4-SIP, TS-6P

RDBLS207G C1G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, FAST, 2A, 1000

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
• Current - Reverse Leakage @ Vr: 2µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: DBLS

pacchetto: 4-SMD, Gull Wing

DBL102G C1G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Current - Reverse Leakage @ Vr: 2µA @ 100V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: DBL

pacchetto: 4-DIP (0.300", 7.62mm)

TS78L15CT A3G

Taiwan Semiconductor Corporation

IC REG LINEAR 15V 100MA

• Output Configuration: -
• Output Type: -
• Number of Regulators: -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 100mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: 0°C ~ 150°C (TJ)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

DBL158GH

Taiwan Semiconductor Corporation

BRIDGE RECT 1P 1.2KV 1.5A DBL

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1.2 kV
• Current - Average Rectified (Io): 1.5 A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1.5 A
• Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: DBL

pacchetto: -

BZD27C12PW

Taiwan Semiconductor Corporation

DIODE ZENER 12V 1W SOD123W

• Voltage - Zener (Nom) (Vz): 12 V
• Tolerance: ±5%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W

pacchetto: -

ES2BAH

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 2A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 100 V
• Capacitance @ Vr, F: 25pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

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MMSZ5225B

Taiwan Semiconductor Corporation

SOD-123F, 500MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 3 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 29 Ohms
• Current - Reverse Leakage @ Vr: 50 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

pacchetto: -

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1PGSMC5352H

Taiwan Semiconductor Corporation

DIODE ZENER 15V 5W DO214AB

• Voltage - Zener (Nom) (Vz): 15 V
• Tolerance: ±5%
• Power - Max: 5 W
• Impedance (Max) (Zzt): 3 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)

pacchetto: -

TQM130NB06CR-RLG

Taiwan Semiconductor Corporation

MOSFET N-CH 60V 10A/50A 8PDFNU

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2234 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: 8-PDFNU (5x6)
• Package / Case: 8-PowerTDFN

pacchetto: -

DBL202GH

Taiwan Semiconductor Corporation

DIODE BRIDGE 2A 100V DBL

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 100 V
• Current - Average Rectified (Io): 2 A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
• Current - Reverse Leakage @ Vr: 2 µA @ 100 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: DBL

pacchetto: -

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TUAU8KH

Taiwan Semiconductor Corporation

80NS, 8A, 800V, HIGH EFFICIENT R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 80 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Capacitance @ Vr, F: 43pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: SMPC4.6U
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

SF18GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

TSM4NB65CI

Taiwan Semiconductor Corporation

650V, 4A, SINGLE N-CHANNEL POWER

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13.46 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 25W (Tc)
• Rds On (Max) @ Id, Vgs: 3.37Ohm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ITO-220
• Package / Case: TO-220-3 Full Pack, Isolated Tab

pacchetto: -

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BAT46GW

Taiwan Semiconductor Corporation

0.25A, 100V, SCHOTTKY RECTIFIER

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 250 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 75 V
• Capacitance @ Vr, F: 39pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -55°C ~ 125°C

pacchetto: -

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M3Z10VC-RRG

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, ZENER DIODE

• Voltage - Zener (Nom) (Vz): 10 V
• Tolerance: ±5%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

pacchetto: -