Prodotti Taiwan Semiconductor Corporation

BZD27C62PHR3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 62V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 62V
• Tolerance: ±6.45%
• Power - Max: 1W
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 47V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacchetto: DO-219AB

TSZU52C4V7 RGG

Taiwan Semiconductor Corporation

DIODE, ZENER, 4.7V, 150MW, 5%, 0

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±5%
• Power - Max: 150mW
• Impedance (Max) (Zzt): 78 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0603

pacchetto: 0201 (0603 Metric)

BZX585B4V3 RKG

Taiwan Semiconductor Corporation

DIODE, ZENER, 4.3V, 200MW, 2%, S

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 2.7µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F

pacchetto: SC-79, SOD-523

BZT52C30K RKG

Taiwan Semiconductor Corporation

DIODE, ZENER, 30V, 200MW, 5%, SO

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 23V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F

pacchetto: SC-79, SOD-523

BZT52B47S RRG

Taiwan Semiconductor Corporation

DIODE, ZENER, 47V, 200MW, 2%, SO

• Voltage - Zener (Nom) (Vz): 47V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 170 Ohms
• Current - Reverse Leakage @ Vr: 45nA @ 33V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

pacchetto: SC-90, SOD-323F

BZT52B33 RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 33V, 500MW, 2%, SO

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 45nA @ 23V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

pacchetto: SOD-123F

BZV55B2V7 L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 2.7V, 500MW, 2%, M

• Voltage - Zener (Nom) (Vz): 2.7V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 85 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

pacchetto: DO-213AC, MINI-MELF, SOD-80

BZV55C2V4 L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 2.4V, 500MW, 5%, M

• Voltage - Zener (Nom) (Vz): 2.4V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 85 Ohms
• Current - Reverse Leakage @ Vr: 50µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

pacchetto: DO-213AC, MINI-MELF, SOD-80

BZD27C51P RVG

Taiwan Semiconductor Corporation

DIODE, ZENER, 51V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 39V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacchetto: DO-219AB

BZT52C15 RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 15V, 500MW, 5%, SO

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 45nA @ 10.5V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

pacchetto: SOD-123F

GBU607 D2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 6A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

pacchetto: 4-SIP, GBU

MTZJ24SA

Taiwan Semiconductor Corporation

DO-34, 500MW, 2%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 22.62 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 200 nA @ 19 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: DO-34

pacchetto: -

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MBR20L120CT

Taiwan Semiconductor Corporation

DIODE ARR SCHOT 120V 20A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 120 V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20 µA @ 120 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

pacchetto: -

BZS55C16

Taiwan Semiconductor Corporation

1206 (CERAMICS), 500MW, 5%, SMAL

• Voltage - Zener (Nom) (Vz): 16 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 12 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206

pacchetto: -

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HS1JAL

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A THIN SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 600 V
• Capacitance @ Vr, F: 13pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: Thin SMA
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

HS2GFS

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 2A SOD128

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: 25pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

TS50P07GH

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 50A TS-6P

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 50 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
• Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

pacchetto: -

HERF1005GH

Taiwan Semiconductor Corporation

DIODE ARRAY GP 400V 10A ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

pacchetto: -

TST10H200CW

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 200V 5A TO220AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

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TSM60NC390CI-C0G

Taiwan Semiconductor Corporation

600V, 11A, SINGLE N-CHANNEL POWE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 78W (Tc)
• Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ITO-220
• Package / Case: TO-220-3 Full Pack, Isolated Tab

pacchetto: -

BAT54SD-RF

Taiwan Semiconductor Corporation

SOT-363, 30V, 0.2A, SCHOTTKY DIO

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 25 V
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: -

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PU2DMH

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 2A MICRO SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 36 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 200 V
• Capacitance @ Vr, F: 18pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: Micro SMA
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

ZM4731A

Taiwan Semiconductor Corporation

MELF, 1000MW, 5%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 4.3 V
• Tolerance: ±5%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF

pacchetto: -

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MBR25150CT-Y

Taiwan Semiconductor Corporation

DIODE ARR SCHOT 150V 25A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io) (per Diode): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 150 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

pacchetto: -

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MMSZ4698-RHG

Taiwan Semiconductor Corporation

SOD-123, 500MW, 5%, SMALL SIGNAL

• Voltage - Zener (Nom) (Vz): 11 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 1 µA @ 8.4 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

pacchetto: -

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BA158GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

SF43G

Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 4A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 150 V
• Capacitance @ Vr, F: 100pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

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BZT52C56

Taiwan Semiconductor Corporation

SOD-123F, 500MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 56 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 45 nA @ 39.2 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

pacchetto: -

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