Pagina 17 - Prodotti Taiwan Semiconductor Corporation

Numero di parte	Produttore	Descrizione	pacchetto	Azione
2M82ZHR0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 82V, 2000MW, %, AE Voltage - Zener (Nom) (Vz): 82V Tolerance: ±5% Power - Max: 2W Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: 500nA @ 62.2V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	pacchetto: DO-204AC, DO-15, Axial	Azione3.776
BZD27C6V8PHRFG	Taiwan Semiconductor Corporation	DIODE, ZENER, 6.8V, 1000MW, %, A Voltage - Zener (Nom) (Vz): 6.8V Tolerance: ±5.88% Power - Max: 1W Impedance (Max) (Zzt): 3 Ohms Current - Reverse Leakage @ Vr: 10µA @ 3V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	pacchetto: DO-219AB	Azione7.840
2M100Z R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 100V, 2000MW, %, D Voltage - Zener (Nom) (Vz): 100V Tolerance: ±5% Power - Max: 2W Impedance (Max) (Zzt): 175 Ohms Current - Reverse Leakage @ Vr: 500nA @ 76V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	pacchetto: DO-204AC, DO-15, Axial	Azione2.784
BZD27C68PHM2G	Taiwan Semiconductor Corporation	DIODE, ZENER, 68V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 68V Tolerance: ±5.88% Power - Max: 1W Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 1µA @ 51V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	pacchetto: DO-219AB	Azione6.816
1SMA5928 R3G	Taiwan Semiconductor Corporation	DIODE, ZENER, 13V, 1500MW, 5%, D Voltage - Zener (Nom) (Vz): 13V Tolerance: ±5% Power - Max: 1.5W Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 500nA @ 9.9V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	pacchetto: DO-214AC, SMA	Azione5.744
BZD17C180P MTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 180V, 800MW, %, SU Voltage - Zener (Nom) (Vz): 180V Tolerance: ±6.38% Power - Max: 800mW Impedance (Max) (Zzt): 450 Ohms Current - Reverse Leakage @ Vr: 1µA @ 130V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	pacchetto: DO-219AB	Azione6.784
1N4743A R1G	Taiwan Semiconductor Corporation	DIODE, ZENER, 13V, 1000MW, 5%, D Voltage - Zener (Nom) (Vz): 13V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 70 Ohms Current - Reverse Leakage @ Vr: 5µA @ 32.7V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	pacchetto: DO-204AL, DO-41, Axial	Azione6.704
1M120Z R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 120V, 1000MW, 5%, Voltage - Zener (Nom) (Vz): 120V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 550 Ohms Current - Reverse Leakage @ Vr: 5µA @ 91.2V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	pacchetto: DO-204AL, DO-41, Axial	Azione4.320
BZT52B11S RRG	Taiwan Semiconductor Corporation	DIODE, ZENER, 11V, 200MW, 2%, SO Voltage - Zener (Nom) (Vz): 11V Tolerance: ±2% Power - Max: 200mW Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 90nA @ 8V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	pacchetto: SC-90, SOD-323F	Azione2.880
BZX84C15 RFG	Taiwan Semiconductor Corporation	DIODE, ZENER, 15V, 300MW, 5%, SO Voltage - Zener (Nom) (Vz): 15V Tolerance: ±5% Power - Max: 300mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 100nA @ 10.5V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione4.752
BZV55C75 L0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 75V, 500MW, 5%, MM Voltage - Zener (Nom) (Vz): 75V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 170 Ohms Current - Reverse Leakage @ Vr: 100nA @ 56V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	pacchetto: DO-213AC, MINI-MELF, SOD-80	Azione2.672
TS6P03G C2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 6A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	pacchetto: 4-SIP, TS-6P	Azione5.392
DBL103G C1G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 2µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	pacchetto: 4-DIP (0.300", 7.62mm)	Azione7.696
1SMB5948H	Taiwan Semiconductor Corporation	DIODE ZENER 91V 3W DO214AA Voltage - Zener (Nom) (Vz): 91 V Tolerance: ±5% Power - Max: 3 W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 69.2 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	pacchetto: -	Request a Quote
BZT52C8V2	Taiwan Semiconductor Corporation	SOD-123F, 500MW, 5%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 8.2 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 630 nA @ 5 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	pacchetto: -	Request a Quote
TSM7ND65CI	Taiwan Semiconductor Corporation	MOSFET N-CH 650V 7A ITO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1124 pF @ 50 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	pacchetto: -	Azione9
MBRF10H200CTH	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 200V ITO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 970 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 200 V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB	pacchetto: -	Request a Quote
TS10P05GH	Taiwan Semiconductor Corporation	10A, 600V, STANDARD BRIDGE RECTI Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	pacchetto: -	Azione3.600
FR157G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1.5A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione37.206
UG12J	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 12A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione2.970
TSS54U	Taiwan Semiconductor Corporation	603, 30V, 0.2A, SCHOTTKY DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 2 µA @ 30 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: 0603 Operating Temperature - Junction: -65°C ~ 125°C	pacchetto: -	Request a Quote
BZT55B8V2	Taiwan Semiconductor Corporation	MMELF, 500MW, 2%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 8.2 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: QMMELF	pacchetto: -	Request a Quote
UDZS18B-R9G	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 2%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 18 V Tolerance: ±2% Power - Max: 200 mW Impedance (Max) (Zzt): 50 Ohms Current - Reverse Leakage @ Vr: 45 nA @ 13 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	pacchetto: -	Azione30.000
UF5JFC-C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 30 µA @ 600 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote
MBRS20100CT-Y	Taiwan Semiconductor Corporation	DIODE ARR SCHOT 100V 20A TO263AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io) (per Diode): 20A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK)	pacchetto: -	Request a Quote
KBU604G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 400V 6A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	pacchetto: -	Azione1.482
TS25P04GH	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 400V 25A TS-6P Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	pacchetto: -	Azione3.600
TSM1NB60LCW-RPG	Taiwan Semiconductor Corporation	600V, 0.55A, SINGLE N-CHANNEL PO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta), 550mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 10.4W (Tc) Rds On (Max) @ Id, Vgs: 15Ohm @ 270mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	pacchetto: -	Azione15.000