Prodotti Rohm Semiconductor

ES6U41T2R

Rohm Semiconductor

MOSFET N-CH 30V 1.5A WEMT6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-WEMT
• Package / Case: SOT-563, SOT-666

pacchetto: SOT-563, SOT-666

R6015ANZC8

Rohm Semiconductor

MOSFET N-CH 600V 15A TO3PF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.15V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3PF
• Package / Case: TO-3P-3 Full Pack

pacchetto: TO-3P-3 Full Pack

SCT3030KLGC11

Rohm Semiconductor

MOSFET NCH 1.2KV 72A TO247N

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
• Gate Charge (Qg) (Max) @ Vgs: 131nC @ 18V
• Input Capacitance (Ciss) (Max) @ Vds: 2222pF @ 800V
• Vgs (Max): +22V, -4V
• FET Feature: -
• Power Dissipation (Max): 339W (Tc)
• Rds On (Max) @ Id, Vgs: 39 mOhm @ 27A, 18V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247N
• Package / Case: TO-247-3

pacchetto: TO-247-3

EM6K33T2R

Rohm Semiconductor

MOSFET 2N-CH 50V 0.2A EMT6

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate, 1.2V Drive
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 200mA
• Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
• Power - Max: 150mW
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: EMT6

pacchetto: SOT-563, SOT-666

IMB10AT110

Rohm Semiconductor

TRANS PREBIAS DUAL PNP SMT6

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: SMT6

pacchetto: SC-74, SOT-457

BD9851EFV-E2

Rohm Semiconductor

IC REG CTRLR BUCK/BST 20HTSSOP-B

• Output Type: Transistor Driver
• Function: Step-Up, Step-Down
• Output Configuration: Positive or Negative
• Topology: Buck, Boost
• Number of Outputs: 2
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 4 V ~ 18 V
• Frequency - Switching: 10kHz ~ 3MHz
• Duty Cycle (Max): -
• Synchronous Rectifier: No
• Clock Sync: No
• Serial Interfaces: -
• Control Features: Enable, Frequency Control, Soft Start
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
• Supplier Device Package: 20-HTSSOP-B

pacchetto: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad

BR25H160FJ-WCE2

Rohm Semiconductor

IC EEPROM 16KBIT 10MHZ 8SOPJ

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 16Kb (2K x 8)
• Memory Interface: SPI
• Clock Frequency: 5MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP-J

pacchetto: 8-SOIC (0.154", 3.90mm Width)

BD5413EFV-E2

Rohm Semiconductor

IC AMP AUDIO PWR 5W STER 24TSSOP

• Type: Class D
• Output Type: 2-Channel (Stereo)
• Max Output Power x Channels @ Load: 5W x 2 @ 6 Ohm
• Voltage - Supply: 6 V ~ 10.5 V
• Features: Depop, Short-Circuit and Thermal Protection, Shutdown
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Supplier Device Package: 24-HTSSOP-B
• Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad

pacchetto: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad

BU3052FV-E2

Rohm Semiconductor

IC CLOCK GENERATOR SSOP

• Type: -
• PLL: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Divider/Multiplier: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

MCR50JZHJ163

Rohm Semiconductor

RES SMD 16K OHM 5% 1/2W 2010

• Resistance: 16 kOhms
• Tolerance: ±5%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 2010 (5025 Metric)
• Supplier Device Package: 2010
• Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 2010 (5025 Metric)

MCR50JZHFLR390

Rohm Semiconductor

RES SMD 0.39 OHM 1% 1/2W 2010

• Resistance: 390 mOhms
• Tolerance: ±1%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 2010 (5025 Metric)
• Supplier Device Package: 2010
• Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 2010 (5025 Metric)

MCR006YZPF5601

Rohm Semiconductor

RES SMD 5.6K OHM 1% 1/20W 0201

• Resistance: 5.6 kOhms
• Tolerance: ±1%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0201 (0603 Metric)

MCR006YZPF5101

Rohm Semiconductor

RES SMD 5.1K OHM 1% 1/20W 0201

• Resistance: 5.1 kOhms
• Tolerance: ±1%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0201 (0603 Metric)

MCR10EZHF2203

Rohm Semiconductor

RES SMD 220K OHM 1% 1/8W 0805

• Resistance: 220 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0805 (2012 Metric)

KTR18EZPF27R4

Rohm Semiconductor

RES SMD 27.4 OHM 1% 1/4W 1206

• Resistance: 27.4 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 1206 (3216 Metric)

KTR18EZPF18R2

Rohm Semiconductor

RES SMD 18.2 OHM 1% 1/4W 1206

• Resistance: 18.2 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 1206 (3216 Metric)

TRR03EZPJ273

Rohm Semiconductor

RES SMD 27K OHM 5% 1/10W 0603

• Resistance: 27 kOhms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0603 (1608 Metric)

TRR01MZPJ2R2

Rohm Semiconductor

RES SMD 2.2 OHM 5% 1/16W 0402

• Resistance: 2.2 Ohms
• Tolerance: ±5%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: -250/ +500ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0402 (1005 Metric)

MCR18ERTF8061

Rohm Semiconductor

RES SMD 8.06K OHM 1% 1/4W 1206

• Resistance: 8.06 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 1206 (3216 Metric)

MCR10ERTF3601

Rohm Semiconductor

RES SMD 3.6K OHM 1% 1/8W 0805

• Resistance: 3.6 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0805 (2012 Metric)

MCR18ERTF3001

Rohm Semiconductor

RES SMD 3K OHM 1% 1/4W 1206

• Resistance: 3 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 1206 (3216 Metric)

KTR18EZPF1623

Rohm Semiconductor

RES SMD 162K OHM 1% 1/4W 1206

• Resistance: 162 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 1206 (3216 Metric)

KTR10EZPJ225

Rohm Semiconductor

RES SMD 2.2M OHM 5% 1/8W 0805

• Resistance: 2.2 MOhms
• Tolerance: ±5%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0805 (2012 Metric)

R6020KNXC7G

Rohm Semiconductor

600V 20A TO-220FM, HIGH-SPEED SW

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 68W (Tc)
• Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FM
• Package / Case: TO-220-3 Full Pack

pacchetto: -

KDZVTR47A

Rohm Semiconductor

DIODE ZENER 47V 1W PMDU

• Voltage - Zener (Nom) (Vz): 47 V
• Tolerance: ±6.38%
• Power - Max: 1 W
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 5 µA @ 36 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: PMDU

pacchetto: -

2SAR512PHZGT100

Rohm Semiconductor

TRANS PNP 30V 2A SOT89

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2 A
• Voltage - Collector Emitter Breakdown (Max): 30 V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
• Power - Max: 500 mW
• Frequency - Transition: 430MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89

pacchetto: -

RB088BM150FNSTL

Rohm Semiconductor

DIODE ARR SCHOTT 150V 5A TO252

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15 µA @ 150 V
• Operating Temperature - Junction: 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252

pacchetto: -

BAW156HMT116

Rohm Semiconductor

DIODE ARRAY GP 80V 215MA SSD3

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80 V
• Current - Average Rectified (Io) (per Diode): 215mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3 µs
• Current - Reverse Leakage @ Vr: 5 nA @ 75 V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SSD3

pacchetto: -