Prodotti Rohm Semiconductor

TCFGP0J106M8R

Rohm Semiconductor

CAP TANT 10UF 6.3V 20% 0805

• Capacitance: 10µF
• Tolerance: ±20%
• Voltage - Rated: 6.3V
• Type: Molded
• ESR (Equivalent Series Resistance): -
• Operating Temperature: -55°C ~ 125°C
• Lifetime @ Temp.: -
• Mounting Type: Surface Mount
• Package / Case: 0805 (2012 Metric)
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.047" (1.20mm)
• Lead Spacing: -
• Manufacturer Size Code: P
• Features: Fail Safe with Built-in Fuse
• Failure Rate: -

pacchetto: 0805 (2012 Metric)

MCH032AN150JK

Rohm Semiconductor

CAP CER 15PF 25V C0G/NP0 0201

• Capacitance: 15pF
• Tolerance: ±5%
• Voltage - Rated: 25V
• Temperature Coefficient: C0G, NP0
• Operating Temperature: -55°C ~ 125°C
• Features: -
• Ratings: -
• Applications: General Purpose
• Failure Rate: -
• Mounting Type: Surface Mount, MLCC
• Package / Case: 0201 (0603 Metric)
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): -
• Thickness (Max): 0.012" (0.30mm)
• Lead Spacing: -
• Lead Style: -

pacchetto: 0201 (0603 Metric)

SH8M13GZETB

Rohm Semiconductor

MIDDLE POWER MOSFET SERIES (DUAL

• FET Type: N and P-Channel
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6A, 7A
• Rds On (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
• Power - Max: 2W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.154", 3.90mm Width)

UMX3NTR

Rohm Semiconductor

TRANS 2NPN 50V 0.15A 6UMT

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 180MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: UMT6

pacchetto: 6-TSSOP, SC-88, SOT-363

EMH9T2R

Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: EMT6

pacchetto: SOT-563, SOT-666

TFZGTR8.2B

Rohm Semiconductor

DIODE ZENER 8.2V 500MW TUMD2

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 5V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: TUMD2

pacchetto: 2-SMD, Flat Lead

BH5510KV-E2

Rohm Semiconductor

IC BRIDGE DRIVER PAR 48VQFPC

• Output Configuration: Half Bridge (13)
• Applications: DC Motors, General Purpose
• Interface: Logic
• Load Type: Inductive
• Technology: Power MOSFET
• Rds On (Typ): -
• Current - Output / Channel: 3A
• Current - Peak Output: -
• Voltage - Supply: 4 V ~ 5.5 V
• Voltage - Load: 3 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Features: -
• Fault Protection: Current Limiting, Over Temperature
• Mounting Type: Surface Mount
• Package / Case: 48-LQFP
• Supplier Device Package: 48-VQFPC (7x7)

pacchetto: 48-LQFP

BU1571KN-E2

Rohm Semiconductor

IC AIE ADAPT IMAGE ENHANCER 36VQ

• Type: Adaptive Image Enhancer (AIE)
• Applications: Camera
• Mounting Type: Surface Mount
• Package / Case: 36-VQFN
• Supplier Device Package: 36-VQFN

pacchetto: 36-VQFN

BD37534FV-E2

Rohm Semiconductor

IC SOUND PROCESSOR AUTO 28SSOP

• Function: Audio Tone Processor
• Applications: Automotive Audio
• Number of Channels: 2
• Interface: I2C
• Voltage - Supply: 7 V ~ 9.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Specifications: -
• Package / Case: 28-LSSOP (0.220", 5.60mm Width)
• Supplier Device Package: 28-SSOPB

pacchetto: 28-LSSOP (0.220", 5.60mm Width)

SLR-342DCT32

Rohm Semiconductor

LED ORANGE CLEAR 3MM ROUND T/H

• Color: Orange
• Configuration: -
• Lens Color: Orange
• Lens Transparency: Clear
• Millicandela Rating: 25mcd
• Lens Style/Size: Round with Domed Top, 3.10mm
• Voltage - Forward (Vf) (Typ): 2V
• Current - Test: 10mA
• Viewing Angle: 40°
• Mounting Type: Through Hole
• Wavelength - Dominant: 605nm
• Wavelength - Peak: -
• Features: -
• Package / Case: Radial
• Supplier Device Package: T-1
• Size / Dimension: -
• Height (Max): 5.40mm

pacchetto: Radial

MCR10EZHJSR091

Rohm Semiconductor

RES SMD 0.091 OHM 5% 1/4W 0805

• Resistance: 91 mOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: 200/ +800ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0805 (2012 Metric)

MCR18EZPJ332

Rohm Semiconductor

RES SMD 3.3K OHM 5% 1/4W 1206

• Resistance: 3.3 kOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 1206 (3216 Metric)

MCR006YZPF1202

Rohm Semiconductor

RES SMD 12K OHM 1% 1/20W 0201

• Resistance: 12 kOhms
• Tolerance: ±1%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0201 (0603 Metric)

MCR18EZHF3570

Rohm Semiconductor

RES SMD 357 OHM 1% 1/4W 1206

• Resistance: 357 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 1206 (3216 Metric)

MCR10EZHF4701

Rohm Semiconductor

RES SMD 4.7K OHM 1% 1/8W 0805

• Resistance: 4.7 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0805 (2012 Metric)

MCR10EZHF3481

Rohm Semiconductor

RES SMD 3.48K OHM 1% 1/8W 0805

• Resistance: 3.48 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0805 (2012 Metric)

MCR03EZPFX4871

Rohm Semiconductor

RES SMD 4.87K OHM 1% 1/10W 0603

• Resistance: 4.87 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0603 (1608 Metric)

MCR10ERTF6201

Rohm Semiconductor

RES SMD 6.2K OHM 1% 1/8W 0805

• Resistance: 6.2 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0805 (2012 Metric)

PSR500HTQFC0L20

Rohm Semiconductor

RES SMD 0.0002 OHM 1% 5W 5931

• Resistance: 2 µOhms
• Tolerance: ±1%
• Power (Watts): 5W
• Composition: Metal Element
• Features: Automotive AEC-Q200, Current Sense
• Temperature Coefficient: ±225ppm/°C
• Operating Temperature: -55°C ~ 170°C
• Package / Case: 5931
• Supplier Device Package: 5931
• Size / Dimension: 0.591" L x 0.305" W (15.00mm x 7.75mm)
• Height - Seated (Max): -
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 5931

MCR01MRTF3572

Rohm Semiconductor

RES SMD 35.7K OHM 1% 1/16W 0402

• Resistance: 35.7 kOhms
• Tolerance: ±1%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0402 (1005 Metric)

PMR25HZPJV3L0

Rohm Semiconductor

RES SMD 0.003 OHM 5% 1W 1210

• Resistance: 3 mOhms
• Tolerance: ±5%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Current Sense
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.019" (0.47mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 1210 (3225 Metric)

ML62Q1727-NNNGAZ0AX

Rohm Semiconductor

16BIT LP-MCU / 256KB FLASH / 16K

• Core Processor: nX-U16/100
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: I²C, SSP, UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 53
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: 4K x 8
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
• Data Converters: A/D 12x10b; D/A 1x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 150°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-QFP
• Supplier Device Package: 64-QFP (14x14)

pacchetto: 64-QFP

UMZ6-8KFHTL

Rohm Semiconductor

ZENER DIODE (AEC-Q101 QUALIFIED)

• Configuration: 2 Independent
• Voltage - Zener (Nom) (Vz): 6.79 V
• Tolerance: ±2.06%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: UMD4

pacchetto: -

Request a Quote

YQ5LAM10ETR

Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 5A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 610 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 100 V
• Capacitance @ Vr, F: 200pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: PMDTM
• Operating Temperature - Junction: 175°C

pacchetto: -

RBR5L60ADDTE25

Rohm Semiconductor

DIODE SCHOTTKY 60V 5A PMDS

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250 µA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: PMDS
• Operating Temperature - Junction: 150°C

pacchetto: -

SP8K32TB1

Rohm Semiconductor

MOSFET 2N-CH 60V 4.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate, 4V Drive
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

pacchetto: -

Request a Quote

SCT3030KLHRC11

Rohm Semiconductor

SICFET N-CH 1200V 72A TO247N

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
• Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V
• Vgs (Max): +22V, -4V
• FET Feature: -
• Power Dissipation (Max): 339W
• Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247N
• Package / Case: TO-247-3

pacchetto: -

RS1L145GNTB

Rohm Semiconductor

MOSFET N-CH 60V 14.5A/47A 8HSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 47A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.7V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta)
• Rds On (Max) @ Id, Vgs: 9.7mOhm @ 14.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSOP
• Package / Case: 8-PowerTDFN

pacchetto: -