Prodotti Rohm Semiconductor

RQ5E040AJTCL

Rohm Semiconductor

MOSFET N-CH 30V 4A SC96

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 37 mOhm @ 4A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSMT3
• Package / Case: SC-96

pacchetto: SC-96

R6024KNX

Rohm Semiconductor

NCH 600V 24A POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 74W (Tc)
• Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FM
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

MP6K12TCR

Rohm Semiconductor

MOSFET 2N-CH 30V 5A MPT6

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5A
• Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
• Power - Max: 2W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, Flat Leads
• Supplier Device Package: MPT6

pacchetto: 6-SMD, Flat Leads

DTB713ZETL

Rohm Semiconductor

TRANS PREBIAS PNP 150MW EMT3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 30V
• Resistor - Base (R1) (Ohms): 1k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 260MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: EMT3

pacchetto: SC-75, SOT-416

DTC144EUBTL

Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3F

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-85
• Supplier Device Package: UMT3F

pacchetto: SC-85

BAW56T116

Rohm Semiconductor

DIODE ARRAY GP 70V 215MA SSD3

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 70V
• Current - Average Rectified (Io) (per Diode): 215mA
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SSD3

pacchetto: TO-236-3, SC-59, SOT-23-3

BU4337FVE-TR

Rohm Semiconductor

IC DETECTOR VOLT 3.7V CMOS 5VSOF

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: Adjustable/Selectable
• Voltage - Threshold: 3.7V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-665
• Supplier Device Package: 5-VSOF

pacchetto: SOT-665

BA7603F-E2

Rohm Semiconductor

IC VIDEO SIGNAL SWITCHERS 16SOP

• Applications: Video
• Multiplexer/Demultiplexer Circuit: 2:1
• Switch Circuit: -
• Number of Channels: 3
• On-State Resistance (Max): -
• Voltage - Supply, Single (V+): 4.5 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: -
• Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 16-SOP

pacchetto: 16-SOIC (0.173", 4.40mm Width)

SLA560EC4T3F

Rohm Semiconductor

LED BLUE-GREEN CLEAR 5MM RND T/H

• Color: Blue-Green
• Configuration: -
• Lens Color: Colorless
• Lens Transparency: Clear
• Millicandela Rating: 1500mcd
• Lens Style/Size: Round with Domed Top, 5mm (T-1 3/4), 5.00mm
• Voltage - Forward (Vf) (Typ): 3.2V
• Current - Test: 20mA
• Viewing Angle: 40°
• Mounting Type: Through Hole
• Wavelength - Dominant: 525nm
• Wavelength - Peak: -
• Features: -
• Package / Case: Radial
• Supplier Device Package: T-1 3/4
• Size / Dimension: -
• Height (Max): 7.70mm

pacchetto: Radial

MNR04MRAPJ220

Rohm Semiconductor

RES ARRAY 4 RES 22 OHM 0804

• Circuit Type: Isolated
• Resistance (Ohms): 22
• Tolerance: ±5%
• Number of Resistors: 4
• Number of Pins: 8
• Power Per Element: 62.5mW
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Applications: -
• Mounting Type: Surface Mount
• Package / Case: 0804, Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.079" L x 0.039" W (2.00mm x 1.00mm)
• Height - Seated (Max): 0.020" (0.50mm)

pacchetto: 0804, Convex, Long Side Terminals

MCR10EZHJ202

Rohm Semiconductor

RES SMD 2K OHM 5% 1/8W 0805

• Resistance: 2 kOhms
• Tolerance: ±5%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0805 (2012 Metric)

TRR10EZPF2152

Rohm Semiconductor

RES SMD 21.5K OHM 1% 1/8W 0805

• Resistance: 21.5 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0805 (2012 Metric)

ESR10EZPF1373

Rohm Semiconductor

RES SMD 137K OHM 1% 0.4W 0805

• Resistance: 137 kOhms
• Tolerance: ±1%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0805 (2012 Metric)

ESR18EZPF4702

Rohm Semiconductor

RES SMD 47K OHM 1% 1/3W 1206

• Resistance: 47 kOhms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 1206 (3216 Metric)

ESR18EZPF2261

Rohm Semiconductor

RES SMD 2.26K OHM 1% 1/3W 1206

• Resistance: 2.26 kOhms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 1206 (3216 Metric)

MCR18ERTF1210

Rohm Semiconductor

RES SMD 121 OHM 1% 1/4W 1206

• Resistance: 121 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 1206 (3216 Metric)

MCR01MRTJ331

Rohm Semiconductor

RES SMD 330 OHM 5% 1/16W 0402

• Resistance: 330 Ohms
• Tolerance: ±5%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0402 (1005 Metric)

MCR100JZHF5360

Rohm Semiconductor

RES SMD 536 OHM 1% 1W 2512

• Resistance: 536 Ohms
• Tolerance: ±1%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 2512 (6432 Metric)

MCR006YRTF5601

Rohm Semiconductor

RES SMD 5.6K OHM 1% 1/20W 0201

• Resistance: 5.6 kOhms
• Tolerance: ±1%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0201 (0603 Metric)

UCR10EVHFSR075

Rohm Semiconductor

RES SMD 0.075 OHM 1% 1/3W 0805

• Resistance: 75 mOhms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Current Sense
• Temperature Coefficient: 0/ +150ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0805 (2012 Metric)

KTR10EZPF1072

Rohm Semiconductor

RES SMD 10.7K OHM 1% 1/8W 0805

• Resistance: 10.7 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 0805 (2012 Metric)

KTR18EZPJ105

Rohm Semiconductor

RES SMD 1M OHM 5% 1/4W 1206

• Resistance: 1 MOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

pacchetto: 1206 (3216 Metric)

KDZVTFTR6-2B

Rohm Semiconductor

DIODE ZENER 6.6V 1W PMDU

• Voltage - Zener (Nom) (Vz): 6.6 V
• Tolerance: ±6.45%
• Power - Max: 1 W
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 20 µA @ 3 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: PMDU

pacchetto: -

SCS230AE2GC11

Rohm Semiconductor

DIODE ARR SIC SCHOT 650V TO247N

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io) (per Diode): 15A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 300 µA @ 600 V
• Operating Temperature - Junction: 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

pacchetto: -

RGW00TS65GC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 96A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 96 A
• Current - Collector Pulsed (Icm): 200 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
• Power - Max: 254 W
• Switching Energy: 1.18mJ (on), 960µJ (off)
• Input Type: Standard
• Gate Charge: 141 nC
• Td (on/off) @ 25°C: 52ns/180ns
• Test Condition: 400V, 50A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

pacchetto: -

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RGS50NL65DHRBTL

Rohm Semiconductor

IGBT TRENCH FS 650V 50A TO263L

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 75 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
• Power - Max: 206 W
• Switching Energy: 810µJ (on), 650µJ (off)
• Input Type: Standard
• Gate Charge: 31 nC
• Td (on/off) @ 25°C: 28ns/91ns
• Test Condition: 400V, 25A, 10Ohm, 15V
• Reverse Recovery Time (trr): 95 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263L

pacchetto: -

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RB088LAM100TFTR

Rohm Semiconductor

DIODE SCHOTTKY 100V 5A PMDTM

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: PMDTM
• Operating Temperature - Junction: 150°C (Max)

pacchetto: -

HP8MB5TB1

Rohm Semiconductor

40V 16.5A, DUAL NCH+PCH, HSOP8,

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc)
• Rds On (Max) @ Id, Vgs: 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
• Power - Max: 3W (Ta), 20W (Tc)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-HSOP

pacchetto: -