Pagina 9 - Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli

Record 1.247
Pagina  9/45
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
RX3G07BBGC16
Rohm Semiconductor

NCH 40V 70A, TO-220AB, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 70A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: -
Azione2.922
MOSFET (Metal Oxide)
40 V
70A (Tc)
4.5V, 10V
2.5V @ 1mA
56 nC @ 10 V
3540 pF @ 20 V
±20V
-
89W (Tc)
3mOhm @ 70A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
R6511ENJTL
Rohm Semiconductor

MOSFET N-CH 650V 11A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 320µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 124W (Tc)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione270
MOSFET (Metal Oxide)
650 V
11A (Tc)
10V
4V @ 320µA
32 nC @ 10 V
670 pF @ 25 V
±20V
-
124W (Tc)
400mOhm @ 3.8A, 10V
150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6086YNZ4C13
Rohm Semiconductor

NCH 600V 86A, TO-247, POWER MOSF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 4.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 781W (Tc)
  • Rds On (Max) @ Id, Vgs: 44mOhm @ 17A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247G
  • Package / Case: TO-247-3
pacchetto: -
Azione1.704
MOSFET (Metal Oxide)
600 V
86A (Tc)
10V, 12V
6V @ 4.6mA
110 nC @ 10 V
5100 pF @ 100 V
±30V
-
781W (Tc)
44mOhm @ 17A, 12V
150°C (TJ)
Through Hole
TO-247G
TO-247-3
SCT4018KRC15
Rohm Semiconductor

1200V, 18M, 4-PIN THD, TRENCH-ST

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
  • Vgs (Max): +21V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 312W
  • Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
pacchetto: -
Azione14.571
SiCFET (Silicon Carbide)
1200 V
81A (Tc)
18V
4.8V @ 22.2mA
170 nC @ 18 V
4532 pF @ 800 V
+21V, -4V
-
312W
23.4mOhm @ 42A, 18V
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
SCT4062KW7HRTL
Rohm Semiconductor

1200V, 24A, 7-PIN SMD, TRENCH-ST

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
  • Vgs (Max): +21V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 93W
  • Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7L
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
pacchetto: -
Azione2.940
SiCFET (Silicon Carbide)
1200 V
24A (Tc)
18V
4.8V @ 6.45mA
64 nC @ 18 V
1498 pF @ 800 V
+21V, -4V
-
93W
81mOhm @ 12A, 18V
175°C (TJ)
Surface Mount
TO-263-7L
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
RV2E014AJT2CL
Rohm Semiconductor

NCH 30V 1.4A, DFN1006-3, SMALL S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 290mOhm @ 1.4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1006-3
  • Package / Case: 3-XFDFN
pacchetto: -
Azione23.970
MOSFET (Metal Oxide)
30 V
700mA (Ta)
2.5V, 4.5V
1.5V @ 1mA
-
105 pF @ 15 V
±12V
-
400mW (Ta)
290mOhm @ 1.4A, 4.5V
150°C (TJ)
Surface Mount
DFN1006-3
3-XFDFN
RD3U080CNTL1
Rohm Semiconductor

MOSFET N-CH 250V 8A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione29.934
MOSFET (Metal Oxide)
250 V
8A (Tc)
10V
5V @ 1mA
25 nC @ 10 V
1440 pF @ 25 V
±30V
-
85W (Tc)
300mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RD3G03BATTL1
Rohm Semiconductor

PCH -40V -35A POWER MOSFET - RD3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 56W (Tc)
  • Rds On (Max) @ Id, Vgs: 19.1mOhm @ 35A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione13.857
MOSFET (Metal Oxide)
40 V
35A (Tc)
4.5V, 10V
2.5V @ 1mA
38 nC @ 10 V
2100 pF @ 20 V
±20V
-
56W (Tc)
19.1mOhm @ 35A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RSS070N05FRATB
Rohm Semiconductor

MOSFET N-CH 45V 7A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
45 V
7A (Ta)
4V, 10V
2.5V @ 1mA
16.8 nC @ 5 V
1000 pF @ 10 V
±20V
-
2W (Ta)
25mOhm @ 7A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RJ1P04BBHTL1
Rohm Semiconductor

NCH 100V 40A, TO-263AB, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 40A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione2.388
MOSFET (Metal Oxide)
100 V
40A (Tc)
6V, 10V
4V @ 1mA
38 nC @ 10 V
2410 pF @ 50 V
±20V
-
89W (Tc)
8.8mOhm @ 40A, 10V
150°C (TJ)
Surface Mount
TO-263AB
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6015ANZFU7C8
Rohm Semiconductor

MOSFET N-CH 600V 15A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
15A (Tc)
10V
4.15V @ 1mA
50 nC @ 10 V
1700 pF @ 25 V
±30V
-
110W (Tc)
300mOhm @ 7.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6020JNXC7G
Rohm Semiconductor

MOSFET N-CH 600V 20A TO220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 3.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 76W (Tc)
  • Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione5.790
MOSFET (Metal Oxide)
600 V
20A (Tc)
15V
7V @ 3.5mA
45 nC @ 15 V
1500 pF @ 100 V
±30V
-
76W (Tc)
234mOhm @ 10A, 15V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
R6020ENZ4C13
Rohm Semiconductor

MOSFET N-CH 600V 20A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 231W (Tc)
  • Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: -
Azione1.800
MOSFET (Metal Oxide)
600 V
20A (Tc)
10V
4V @ 1mA
60 nC @ 10 V
1400 pF @ 25 V
±20V
-
231W (Tc)
196mOhm @ 9.5A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
GNP1150TCA-ZE2
Rohm Semiconductor

ECOGAN, 650V 11A DFN8080AK, E-MO

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V
  • Vgs(th) (Max) @ Id: 2.4V @ 18mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
  • Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 400 V
  • Vgs (Max): +6V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 195mOhm @ 1.9A, 5.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN8080AK
  • Package / Case: 8-PowerDFN
pacchetto: -
Azione9.153
GaNFET (Gallium Nitride)
650 V
11A (Tc)
5V, 5.5V
2.4V @ 18mA
2.7 nC @ 6 V
112 pF @ 400 V
+6V, -10V
-
62.5W (Tc)
195mOhm @ 1.9A, 5.5V
150°C (TJ)
Surface Mount
DFN8080AK
8-PowerDFN
RD3P175SNFRATL
Rohm Semiconductor

MOSFET N-CH 100V 17.5A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 8.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione11.211
MOSFET (Metal Oxide)
100 V
17.5A (Ta)
4V, 10V
2.5V @ 1mA
24 nC @ 10 V
950 pF @ 25 V
±20V
-
20W (Tc)
105mOhm @ 8.8A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RK7002BMHZGT116
Rohm Semiconductor

MOSFET N-CH 60V 250MA SST3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SST3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Azione109.155
MOSFET (Metal Oxide)
60 V
250mA (Ta)
2.5V, 10V
2.3V @ 1mA
-
15 pF @ 25 V
±20V
-
350mW (Ta)
2.4Ohm @ 250mA, 10V
150°C (TJ)
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
RQ6L035ATTCR
Rohm Semiconductor

PCH -60V -3.5A POWER MOSFET - RQ

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 78mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: -
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MOSFET (Metal Oxide)
60 V
3.5A (Ta)
4.5V, 10V
2.5V @ 1mA
22 nC @ 10 V
1190 pF @ 30 V
±20V
-
950mW (Ta)
78mOhm @ 3.5A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
RSS070N05HZGTB
Rohm Semiconductor

AUTOMOTIVE NCH 45V 7A POWER MOSF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Azione6.444
MOSFET (Metal Oxide)
45 V
7A (Ta)
4V, 10V
2.5V @ 1mA
16.8 nC @ 5 V
1000 pF @ 10 V
±20V
-
1.4W (Ta)
25mOhm @ 7A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
R6509ENJTL
Rohm Semiconductor

MOSFET N-CH 650V 9A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione264
MOSFET (Metal Oxide)
650 V
9A (Tc)
10V
4V @ 230µA
24 nC @ 10 V
430 pF @ 25 V
±20V
-
94W (Tc)
585mOhm @ 2.8A, 10V
150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RSS070N05TB1
Rohm Semiconductor

MOSFET N-CH 45V 7A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
45 V
7A (Ta)
4.5V, 10V
2.5V @ 1mA
16.8 nC @ 5 V
1000 pF @ 10 V
±20V
-
2W (Ta)
25mOhm @ 7A, 10V
150°C
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
R6025JNZC17
Rohm Semiconductor

MOSFET N-CH 600V 25A TO3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: -
Azione900
MOSFET (Metal Oxide)
600 V
25A (Tc)
15V
7V @ 2.5mA
57 nC @ 15 V
1900 pF @ 100 V
±30V
-
85W (Tc)
182mOhm @ 12.5A, 15V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6509KND3TL1
Rohm Semiconductor

HIGH-SPEED SWITCHING, NCH 650V 9

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione7.470
MOSFET (Metal Oxide)
650 V
9A (Tc)
10V
5V @ 230µA
16.5 nC @ 10 V
540 pF @ 25 V
±20V
-
94W (Tc)
585mOhm @ 2.8A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RX3P12BATC16
Rohm Semiconductor

PCH -100V -120A POWER MOSFET: RX

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 385 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 16600 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 201W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.3mOhm @ 60A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: -
Azione2.571
MOSFET (Metal Oxide)
100 V
120A (Tc)
6V, 10V
4V @ 1mA
385 nC @ 10 V
16600 pF @ 50 V
±20V
-
201W (Tc)
12.3mOhm @ 60A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
R6020YNX3C16
Rohm Semiconductor

NCH 600V 20A, TO-220AB, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 1.65mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 182W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: -
Azione2.925
MOSFET (Metal Oxide)
600 V
20A (Tc)
10V, 12V
6V @ 1.65mA
28 nC @ 10 V
1200 pF @ 100 V
±30V
-
182W (Tc)
185mOhm @ 6A, 12V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
RS1P600BETB1
Rohm Semiconductor

MOSFET N-CH 100V 17.5A/60A 8HSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
100 V
17.5A (Ta), 60A (Tc)
10V
4V @ 500µA
33 nC @ 10 V
2200 pF @ 50 V
±20V
-
3W (Ta), 35W (Tc)
9.7mOhm @ 17.5A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
R6020JNZ4C13
Rohm Semiconductor

MOSFET N-CH 600V 20A TO247G

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 3.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 252W (Tc)
  • Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247G
  • Package / Case: TO-247-3
pacchetto: -
Azione1.065
MOSFET (Metal Oxide)
600 V
20A (Tc)
15V
7V @ 3.5mA
45 nC @ 15 V
1500 pF @ 100 V
±30V
-
252W (Tc)
234mOhm @ 10A, 15V
-55°C ~ 150°C (TJ)
Through Hole
TO-247G
TO-247-3
RQ5E015RPTL
Rohm Semiconductor

MOSFET P-CH 30V 1.5A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: -
Azione25.047
MOSFET (Metal Oxide)
30 V
1.5A (Ta)
4V, 10V
2.5V @ 1mA
3.2 nC @ 5 V
230 pF @ 10 V
±20V
-
700mW (Ta)
160mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
R6014YNX3C16
Rohm Semiconductor

NCH 600V 14A, TO-220AB, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 1.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 132W (Tc)
  • Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: -
Azione2.988
MOSFET (Metal Oxide)
600 V
14A (Tc)
10V, 12V
6V @ 1.4mA
20 nC @ 10 V
890 pF @ 100 V
±30V
-
132W (Tc)
260mOhm @ 5A, 12V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3