Pagina 16 - Prodotti ON Semiconductor - Transistor - FET, MOSFET - Singoli | Heisener Electronics
Contattaci
SalesDept@heisener.com +86-755-83210559 ext. 706
Accesso/Registrati
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrello 0

Prodotti ON Semiconductor - Transistor - FET, MOSFET - Singoli

Record 2.260
Pagina  16/81
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SCH1435-TL-W
ON Semiconductor

MOSFET N-CH 30V 3A SCH6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 89 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SCH
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione4.816
MOSFET (Metal Oxide)
30V
3A (Ta)
1.8V, 4.5V
-
3.5nC @ 4.5V
265pF @ 10V
±12V
-
800mW (Ta)
89 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
6-SCH
SOT-563, SOT-666
hot SCH1430-TL-H
ON Semiconductor

MOSFET N-CH 20V 2A SCH6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SCH
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione120.000
MOSFET (Metal Oxide)
20V
2A (Ta)
1.8V, 4.5V
-
1.8nC @ 4.5V
128pF @ 10V
±12V
-
800mW (Ta)
125 mOhm @ 1A, 4.5V
150°C (TJ)
Surface Mount
6-SCH
SOT-563, SOT-666
SCH1337-TL-H
ON Semiconductor

MOSFET P-CH 30V 2A SCH6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 172pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SCH
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione7.776
MOSFET (Metal Oxide)
30V
2A (Ta)
4V, 10V
-
3.9nC @ 10V
172pF @ 10V
±20V
-
800mW (Ta)
150 mOhm @ 1A, 10V
150°C (TJ)
Surface Mount
6-SCH
SOT-563, SOT-666
MCH5839-TL-W
ON Semiconductor

MOSFET P-CH 20V 1.5A MCPH

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 266 mOhm @ 750mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-88AFL/MCPH5
  • Package / Case: 5-SMD, Flat Leads
pacchetto: 5-SMD, Flat Leads
Azione6.544
MOSFET (Metal Oxide)
20V
1.5A (Ta)
1.8V, 4.5V
1.4V @ 1mA
1.7nC @ 4.5V
120pF @ 10V
±10V
-
800mW (Ta)
266 mOhm @ 750mA, 4.5V
150°C (TJ)
Surface Mount
SC-88AFL/MCPH5
5-SMD, Flat Leads
CPH6337-TL-W
ON Semiconductor

MOSFET P-CH 12V 3.5A CPH6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 6V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-CPH
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione5.168
MOSFET (Metal Oxide)
12V
3.5A (Ta)
1.8V, 4.5V
1.4V @ 1mA
5.6nC @ 4.5V
405pF @ 6V
±10V
-
1.6W (Ta)
70 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
6-CPH
SOT-23-6 Thin, TSOT-23-6
SCH1439-TL-W
ON Semiconductor

MOSFET N-CH 30V 3.5A SOT563

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-563/SCH6
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione5.440
MOSFET (Metal Oxide)
30V
3.5A (Ta)
4V, 10V
2.6V @ 1mA
5.6nC @ 10V
280pF @ 10V
±20V
-
1W (Ta)
72 mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
SOT-563/SCH6
SOT-563, SOT-666
CPH3461-TL-W
ON Semiconductor

MOSFET N-CH 250V 0.35A CPH3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 20V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 170mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CPH
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.248
MOSFET (Metal Oxide)
250V
350mA (Ta)
2.5V, 4.5V
1.3V @ 1mA
2.1nC @ 4.5V
140pF @ 20V
±10V
-
1W (Ta)
6.5 Ohm @ 170mA, 4.5V
150°C (TJ)
Surface Mount
3-CPH
TO-236-3, SC-59, SOT-23-3
NTNS3A67PZT5G
ON Semiconductor

MOSFET P-CH 20V SOT883

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
  • Package / Case: SC-101, SOT-883
pacchetto: SC-101, SOT-883
Azione4.784
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
SOT-883 (XDFN3) (1x0.6)
SC-101, SOT-883
NTNS3166NZT5G
ON Semiconductor

MOSFET N-CH 20V 0.361A SOT883

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
  • Package / Case: SC-101, SOT-883
pacchetto: SC-101, SOT-883
Azione7.424
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
SOT-883 (XDFN3) (1x0.6)
SC-101, SOT-883
hot SCH2825-TL-E
ON Semiconductor

MOSFET N-CH 30V 1.6A SCH6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 800mA, 10V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SCH
  • Package / Case: 6-SMD, Flat Leads
pacchetto: 6-SMD, Flat Leads
Azione177.396
MOSFET (Metal Oxide)
30V
1.6A (Ta)
4V, 10V
-
2nC @ 10V
88pF @ 10V
±20V
Schottky Diode (Isolated)
600mW (Ta)
180 mOhm @ 800mA, 10V
-55°C ~ 125°C (TJ)
Surface Mount
6-SCH
6-SMD, Flat Leads
SCH1332-TL-H
ON Semiconductor

MOSFET P-CH 20V 2.5A SCH6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SCH
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione4.208
MOSFET (Metal Oxide)
20V
2.5A (Ta)
1.8V, 4.5V
1.3V @ 1mA
4.6nC @ 4.5V
375pF @ 10V
±10V
-
1W (Ta)
95 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
6-SCH
SOT-563, SOT-666
SCH1433-TL-W
ON Semiconductor

MOSFET N-CH 20V 3.5A SOT563

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 64 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-563/SCH6
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione3.440
MOSFET (Metal Oxide)
20V
3.5A (Ta)
1.8V, 4.5V
1.3V @ 1mA
2.8nC @ 4.5V
260pF @ 10V
±10V
-
800mW (Ta)
64 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
SOT-563/SCH6
SOT-563, SOT-666
NTTFS4C10NTWG
ON Semiconductor

MOSFET N-CH 30V 44A U8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 993pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacchetto: 8-PowerWDFN
Azione3.472
MOSFET (Metal Oxide)
30V
8.2A (Ta), 44A (Tc)
4.5V, 10V
2.2V @ 250µA
18.6nC @ 10V
993pF @ 15V
±20V
-
790mW (Ta), 23.6W (Tc)
7.4 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
MCH6320-TL-W
ON Semiconductor

MOSFET P-CH 12V 3.5A MCPH6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 6V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-88FL/ MCPH6
  • Package / Case: 6-SMD, Flat Leads
pacchetto: 6-SMD, Flat Leads
Azione3.984
MOSFET (Metal Oxide)
12V
3.5A (Ta)
1.8V, 4.5V
1.4V @ 1mA
5.6nC @ 4.5V
405pF @ 6V
±10V
-
1.5W (Ta)
70 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
SC-88FL/ MCPH6
6-SMD, Flat Leads
hot NTHS5443T1G
ON Semiconductor

MOSFET P-CH 20V 3.6A CHIPFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET?
  • Package / Case: 8-SMD, Flat Lead
pacchetto: 8-SMD, Flat Lead
Azione284.232
MOSFET (Metal Oxide)
20V
3.6A (Ta)
2.5V, 4.5V
600mV @ 250µA
12nC @ 4.5V
-
±12V
-
1.3W (Ta)
65 mOhm @ 3.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
ChipFET?
8-SMD, Flat Lead
MCH6421-TL-W
ON Semiconductor

MOSFET N-CH 20V 5.5A MCPH6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-88FL/ MCPH6
  • Package / Case: 6-SMD, Flat Leads
pacchetto: 6-SMD, Flat Leads
Azione4.512
MOSFET (Metal Oxide)
20V
5.5A (Ta)
1.8V, 4.5V
1.3V @ 1mA
5.1nC @ 4.5V
410pF @ 10V
±12V
-
1.5W (Ta)
38 mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
SC-88FL/ MCPH6
6-SMD, Flat Leads
MCH6337-TL-W
ON Semiconductor

MOSFET P-CH 20V 4.5A MCPH6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 49 mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-MCPH
  • Package / Case: 6-SMD, Flat Leads
pacchetto: 6-SMD, Flat Leads
Azione2.416
MOSFET (Metal Oxide)
20V
4.5A (Ta)
1.8V, 4.5V
1.3V @ 1mA
7.3nC @ 4.5V
670pF @ 10V
±10V
-
1.5W (Ta)
49 mOhm @ 3A, 4.5V
150°C (TJ)
Surface Mount
6-MCPH
6-SMD, Flat Leads
MCH6341-TL-W
ON Semiconductor

MOSFET P-CH 30V 5A MCPH6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-MCPH
  • Package / Case: 6-SMD, Flat Leads
pacchetto: 6-SMD, Flat Leads
Azione7.728
MOSFET (Metal Oxide)
30V
5A (Ta)
4V, 10V
2.6V @ 1mA
10nC @ 10V
430pF @ 10V
±20V
-
-
59 mOhm @ 3A, 10V
150°C (TJ)
Surface Mount
6-MCPH
6-SMD, Flat Leads
SCH1332-TL-W
ON Semiconductor

MOSFET P-CH 20V 2.5A SOT563

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-563/SCH6
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione2.736
MOSFET (Metal Oxide)
20V
2.5A (Ta)
1.8V, 4.5V
1.3V @ 1mA
4.6nC @ 4.5V
375pF @ 10V
±10V
-
1W (Ta)
95 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
SOT-563/SCH6
SOT-563, SOT-666
NVR4501NT1G
ON Semiconductor

MOSFET N-CH 20V 3.2A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Tj)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione7.984
MOSFET (Metal Oxide)
20V
3.2A (Ta)
2.5V, 4.5V
1.2V @ 250µA
6nC @ 4.5V
200pF @ 10V
±12V
-
1.25W (Tj)
80 mOhm @ 3.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot MCH3377-TL-W
ON Semiconductor

MOSFET P-CH 20V 3A MCPH3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 83 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-MCPH
  • Package / Case: 3-SMD, Flat Leads
pacchetto: 3-SMD, Flat Leads
Azione58.212
MOSFET (Metal Oxide)
20V
3A (Ta)
1.8V, 4.5V
-
4.6nC @ 4.5V
375pF @ 10V
±10V
-
1W (Ta)
83 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
3-MCPH
3-SMD, Flat Leads
hot SCH1330-TL-H
ON Semiconductor

MOSFET P-CH 20V 1.5A SCH6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 241 mOhm @ 750mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SCH
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione276.000
MOSFET (Metal Oxide)
20V
1.5A (Ta)
1.8V, 4.5V
1.4V @ 1mA
1.7nC @ 4.5V
120pF @ 10V
±10V
-
1W (Ta)
241 mOhm @ 750mA, 4.5V
150°C (TJ)
Surface Mount
6-SCH
SOT-563, SOT-666
hot NVTR0202PLT1G
ON Semiconductor

MOSFET P-CH 20V 0.4A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 225mW (Ta)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione468.264
MOSFET (Metal Oxide)
20V
400mA (Ta)
4.5V, 10V
2.3V @ 250µA
2.18nC @ 10V
70pF @ 5V
±20V
-
225mW (Ta)
800 mOhm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
NTR4501NST1G
ON Semiconductor

MOSFET N-CH 20V 3.2A SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione4.288
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
MVMBF0201NLT1G
ON Semiconductor

MOSFET N-CH 20V 300MA SOT-23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 225mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione7.408
MOSFET (Metal Oxide)
20V
300mA (Ta)
4.5V, 10V
2.4V @ 250µA
-
45pF @ 5V
±20V
-
225mW (Ta)
1 Ohm @ 300mA, 10V
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
NVR5198NLT3G
ON Semiconductor

MOSFET N-CH 60V 2.2A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 182pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 155 mOhm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.200
MOSFET (Metal Oxide)
60V
1.7A (Ta)
4.5V, 10V
2.5V @ 250µA
5.1nC @ 10V
182pF @ 25V
±20V
-
900mW (Ta)
155 mOhm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
NVR5124PLT1G
ON Semiconductor

MOSFET P-CH 60V SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 470mW (Ta)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione5.776
MOSFET (Metal Oxide)
60V
1.1A (Ta)
4.5V, 10V
2.5V @ 250µA
4.3nC @ 10V
240pF @ 25V
±20V
-
470mW (Ta)
230 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SCH1436-TL-W
ON Semiconductor

MOSFET N-CH 30V 1.8A SOT563

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 900mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-563/SCH6
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione6.800
MOSFET (Metal Oxide)
30V
1.8A (Ta)
4V, 10V
2.6V @ 1mA
2nC @ 10V
88pF @ 10V
±20V
-
800mW (Ta)
180 mOhm @ 900mA, 10V
150°C (TJ)
Surface Mount
SOT-563/SCH6
SOT-563, SOT-666