Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor |
DIODE GP 1KV 25A MICRODE BUTTN
|
pacchetto: Microde Button |
Azione3.168 |
|
1000V | 25A | 1.18V @ 78.5A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1000V | - | Surface Mount | Microde Button | Microde Button | -65°C ~ 175°C |
||
ON Semiconductor |
DIODE GP 400V 25A MICRODE BUTTON
|
pacchetto: Microde Button |
Azione3.472 |
|
400V | 25A | 1.18V @ 78.5A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 400V | - | Surface Mount | Microde Button | Microde Button | -65°C ~ 175°C |
||
ON Semiconductor |
DIODE GEN PURP 50V 4A DO201AD
|
pacchetto: DO-201AA, DO-27, Axial |
Azione360.000 |
|
50V | 4A | 890mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
||
ON Semiconductor |
DIODE GP 200V 25A MICRODE BUTTON
|
pacchetto: Microde Button |
Azione6.924 |
|
200V | 25A | 1.18V @ 78.5A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 200V | - | Surface Mount | Microde Button | Microde Button | -65°C ~ 175°C |
||
ON Semiconductor |
DIODE GEN PURP 800V 1A AXIAL
|
pacchetto: DO-204AL, DO-41, Axial |
Azione240.240 |
|
800V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 800V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
||
ON Semiconductor |
DIODE GEN PURP 40V 100MA SC70-3
|
pacchetto: SC-70, SOT-323 |
Azione506.400 |
|
40V | 100mA (DC) | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 3ns | 100nA @ 35V | 2pF @ 0V, 1MHz | Surface Mount | SC-70, SOT-323 | SC-70-3 (SOT323) | 150°C (Max) |
||
ON Semiconductor |
DIODE SCHOTTKY 40V 3A DO201AD
|
pacchetto: DO-201AA, DO-27, Axial |
Azione56.964 |
|
40V | 3A | 525mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 40V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
||
ON Semiconductor |
DIODE SCHOTTKY 30V 3A DO201AD
|
pacchetto: DO-201AA, DO-27, Axial |
Azione42.144 |
|
30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 30V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
||
ON Semiconductor |
DIODE SCHOTTKY 20V 3A DO201AD
|
pacchetto: DO-201AA, DO-27, Axial |
Azione2.336 |
|
20V | 3A | 475mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 20V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
||
ON Semiconductor |
DIODE SCHOTTKY 40V 1A AXIAL
|
pacchetto: DO-204AL, DO-41, Axial |
Azione60.000 |
|
40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 125°C |
||
ON Semiconductor |
DIODE SCHOTTKY 30V 1A AXIAL
|
pacchetto: DO-204AL, DO-41, Axial |
Azione45.600 |
|
30V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 125°C |
||
ON Semiconductor |
DIODE SCHOTTKY 20V 1A AXIAL
|
pacchetto: DO-204AL, DO-41, Axial |
Azione3.968 |
|
20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 125°C |
||
ON Semiconductor |
DIODE GEN PURP 1KV 3A DO201AD
|
pacchetto: DO-201AA, DO-27, Axial |
Azione19.080 |
|
1000V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 170°C |
||
ON Semiconductor |
DIODE GEN PURP 600V 3A DO201AD
|
pacchetto: DO-201AA, DO-27, Axial |
Azione2.640 |
|
600V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 170°C |
||
ON Semiconductor |
DIODE GEN PURP 400V 3A DO201AD
|
pacchetto: DO-201AA, DO-27, Axial |
Azione17.280 |
|
400V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 170°C |
||
ON Semiconductor |
DIODE GEN PURP 200V 3A DO201AD
|
pacchetto: DO-201AA, DO-27, Axial |
Azione7.008 |
|
200V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 170°C |
||
ON Semiconductor |
DIODE GEN PURP 100V 3A AXIAL
|
pacchetto: DO-201AA, DO-27, Axial |
Azione3.344 |
|
100V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | Axial | -65°C ~ 170°C |
||
ON Semiconductor |
DIODE GEN PURP 50V 3A DO201AD
|
pacchetto: DO-201AA, DO-27, Axial |
Azione2.688 |
|
50V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 170°C |
||
ON Semiconductor |
DIODE GEN PURP 600V 1A DO41
|
pacchetto: DO-204AL, DO-41, Axial |
Azione5.904 |
|
600V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
||
ON Semiconductor |
DIODE GEN PURP 400V 1A DO41
|
pacchetto: DO-204AL, DO-41, Axial |
Azione249.600 |
|
400V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
||
ON Semiconductor |
DIODE GEN PURP 200V 1A DO41
|
pacchetto: DO-204AL, DO-41, Axial |
Azione150.960 |
|
200V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
||
ON Semiconductor |
DIODE GEN PURP 100V 1A DO41
|
pacchetto: DO-204AL, DO-41, Axial |
Azione6.288 |
|
100V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
||
ON Semiconductor |
DIODE GEN PURP 50V 1A DO41
|
pacchetto: DO-204AL, DO-41, Axial |
Azione2.800 |
|
50V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
||
ON Semiconductor |
DIODE GEN PURP 1KV 1A DO41
|
pacchetto: DO-204AL, DO-41, Axial |
Azione6.976 |
|
1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
||
ON Semiconductor |
DIODE GEN PURP 800V 1A DO41
|
pacchetto: DO-204AL, DO-41, Axial |
Azione7.856 |
|
800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
||
ON Semiconductor |
DIODE GEN PURP 600V 1A DO41
|
pacchetto: DO-204AL, DO-41, Axial |
Azione4.128 |
|
600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
||
ON Semiconductor |
DIODE GEN PURP 400V 1A DO41
|
pacchetto: DO-204AL, DO-41, Axial |
Azione12.108 |
|
400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
||
ON Semiconductor |
DIODE GEN PURP 200V 1A DO41
|
pacchetto: DO-204AL, DO-41, Axial |
Azione5.104 |
|
200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |