Prodotti Microsemi Corporation

APTMC170AM60CT1AG

Microsemi Corporation

MOSFET 2N-CH 1700V 53A SP1

• FET Type: 2 N Channel (Phase Leg)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1700V (1.7kV)
• Current - Continuous Drain (Id) @ 25°C: 53A
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 50A, 20V
• Vgs(th) (Max) @ Id: 2.3V @ 2.5mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 1000V
• Power - Max: 350W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Supplier Device Package: SP1

pacchetto: SP1

APTC90AM602G

Microsemi Corporation

MOSFET 2N-CH 900V 59A SP2

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Super Junction
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 59A
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 6mA
• Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
• Power - Max: 462W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP2
• Supplier Device Package: SP2

pacchetto: SP2

JANTXV2N3960

Microsemi Corporation

TRANS NPN 12V TO-18

• Transistor Type: NPN
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): 12V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 30mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 1V
• Power - Max: 400mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-206AA, TO-18-3 Metal Can
• Supplier Device Package: TO-18 (TO-206AA)

pacchetto: TO-206AA, TO-18-3 Metal Can

JANTX2N3635UB

Microsemi Corporation

TRANS PNP 140V 1A

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 140V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 10µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
• Power - Max: 1.5W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: 3-SMD

pacchetto: 3-SMD, No Lead

JANTX2N2218A

Microsemi Corporation

TRANS NPN 50V 0.8A TO39

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
• Power - Max: 800mW
• Frequency - Transition: -
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39 (TO-205AD)

pacchetto: TO-205AD, TO-39-3 Metal Can

JANTXV1N5530CUR-1

Microsemi Corporation

DIODE ZENER 10V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

pacchetto: DO-213AA (Glass)

1N5923A G

Microsemi Corporation

DIODE ZENER 8.2V 1.25W DO204AL

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±10%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 3.5 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 6.5V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

SMBJ5933C/TR13

Microsemi Corporation

DIODE ZENER 22V 2W SMBJ

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±2%
• Power - Max: 2W
• Impedance (Max) (Zzt): 17.5 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 16.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

pacchetto: DO-214AA, SMB

3EZ17D10E3/TR8

Microsemi Corporation

DIODE ZENER 17V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 17V
• Tolerance: ±10%
• Power - Max: 3W
• Impedance (Max) (Zzt): 6 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 13V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

1N4742PE3/TR8

Microsemi Corporation

DIODE ZENER 12V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±10%
• Power - Max: 1W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

JANTX1N4473

Microsemi Corporation

DIODE ZENER 22V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 14 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 17.6V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

APT2X61D40J

Microsemi Corporation

DIODE MODULE 400V 60A ISOTOP

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 37ns
• Current - Reverse Leakage @ Vr: 250µA @ 400V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: ISOTOP?

pacchetto: SOT-227-4, miniBLOC

LX1721CDB

Microsemi Corporation

IC AMP AUDIO PWR 10W STER 44QSOP

• Type: Class D
• Output Type: 2-Channel (Stereo)
• Max Output Power x Channels @ Load: 25W x 2 @ 4 Ohm
• Voltage - Supply: 7 V ~ 15 V
• Features: Differential Inputs, Mute
• Mounting Type: Surface Mount
• Operating Temperature: -20°C ~ 70°C (TA)
• Supplier Device Package: 44-QSOP
• Package / Case: 44-QSOP

pacchetto: 44-QSOP

M2S010-1TQG144I

Microsemi Corporation

IC FPGA SOC 10K LUTS

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 256KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 10K Logic Modules
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 144-LQFP
• Supplier Device Package: 144-TQFP (20x20)

pacchetto: 144-LQFP

APA600-CGS624B

Microsemi Corporation

IC FPGA 440 I/O 624CGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 129024
• Number of I/O: 440
• Number of Gates: 600000
• Voltage - Supply: 2.3 V ~ 2.7 V
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 125°C (TJ)
• Package / Case: 624-BCCGA
• Supplier Device Package: 624-CCGA (32.5x32.5)

pacchetto: 624-BCCGA

A3P250-FGG256T

Microsemi Corporation

IC FPGA 157 I/O 256FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 36864
• Number of I/O: 157
• Number of Gates: 250000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 256-LBGA
• Supplier Device Package: 256-FPBGA (17x17)

pacchetto: 256-LBGA

AGLP030V5-CS289I

Microsemi Corporation

IC FPGA 120 I/O 289CSP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 792
• Total RAM Bits: -
• Number of I/O: 120
• Number of Gates: 30000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 289-TFBGA, CSBGA
• Supplier Device Package: 289-CSP (14x14)

pacchetto: 289-TFBGA, CSBGA

MRT100KP200A

Microsemi Corporation

TVS DIODE 200VWM 392VC CASE5A

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 200V
• Voltage - Breakdown (Min): 222V
• Voltage - Clamping (Max) @ Ipp: 392V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 100000W (100kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

pacchetto: DO-204AR, Axial

MXPLAD15KP20AE3

Microsemi Corporation

TVS DIODE 20VWM 32.4VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 20V
• Voltage - Breakdown (Min): 22.2V
• Voltage - Clamping (Max) @ Ipp: 32.4V
• Current - Peak Pulse (10/1000µs): 462A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

pacchetto: Nonstandard SMD

MXPLAD6.5KP30AE3

Microsemi Corporation

TVS DIODE 30VWM 48.4VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 30V
• Voltage - Breakdown (Min): 33.3V
• Voltage - Clamping (Max) @ Ipp: 48.4V
• Current - Peak Pulse (10/1000µs): 135A
• Power - Peak Pulse: 6500W (6.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

pacchetto: Nonstandard SMD

MXL5KP18AE3

Microsemi Corporation

TVS DIODE 18VWM 29.2VC CASE5A

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 18V
• Voltage - Breakdown (Min): 20V
• Voltage - Clamping (Max) @ Ipp: 29.2V
• Current - Peak Pulse (10/1000µs): 172A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

pacchetto: DO-204AR, Axial

MXSMCG6.5AE3

Microsemi Corporation

TVS DIODE 6.5VWM 11.2VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 6.5V
• Voltage - Breakdown (Min): 7.22V
• Voltage - Clamping (Max) @ Ipp: 11.2V
• Current - Peak Pulse (10/1000µs): 133.9A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

pacchetto: DO-215AB, SMC Gull Wing

MXSMLJ13CAE3

Microsemi Corporation

TVS DIODE 13VWM 21.5VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 13V
• Voltage - Breakdown (Min): 14.4V
• Voltage - Clamping (Max) @ Ipp: 21.5V
• Current - Peak Pulse (10/1000µs): 139.4A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

pacchetto: DO-214AB, SMC

MXL1.5KE130A

Microsemi Corporation

TVS DIODE 111VWM 179VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 111V
• Voltage - Breakdown (Min): 124V
• Voltage - Clamping (Max) @ Ipp: 179V
• Current - Peak Pulse (10/1000µs): 8.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

pacchetto: DO-201AA, DO-27, Axial

MASMLG11CA

Microsemi Corporation

TVS DIODE 11VWM 18.2VC DO215AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 11V
• Voltage - Breakdown (Min): 12.2V
• Voltage - Clamping (Max) @ Ipp: 18.2V
• Current - Peak Pulse (10/1000µs): 164.8A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMLG (DO-215AB)

pacchetto: DO-215AB, SMC Gull Wing

MASMCJ70CA

Microsemi Corporation

TVS DIODE 70VWM 113VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 70V
• Voltage - Breakdown (Min): 77.8V
• Voltage - Clamping (Max) @ Ipp: 113V
• Current - Peak Pulse (10/1000µs): 13.3A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

pacchetto: DO-214AB, SMC

MSMCG75CAE3

Microsemi Corporation

TVS DIODE 75VWM 121VC DO215AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 75V
• Voltage - Breakdown (Min): 83.3V
• Voltage - Clamping (Max) @ Ipp: 121V
• Current - Peak Pulse (10/1000µs): 12.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

pacchetto: DO-215AB, SMC Gull Wing

JANSR2N7380

Microsemi Corporation

MOSFET N-CH 100V 14.4A TO257

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 14.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 12V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 12 V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 75W (Tc)
• Rds On (Max) @ Id, Vgs: 200mOhm @ 14.4A, 12V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-257
• Package / Case: TO-257-3

pacchetto: -

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