Prodotti Microsemi Corporation

APT31M100L

Microsemi Corporation

MOSFET N-CH 1000V 32A TO264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1040W (Tc)
• Rds On (Max) @ Id, Vgs: 400 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264
• Package / Case: TO-264-3, TO-264AA

pacchetto: TO-264-3, TO-264AA

2729GN-270

Microsemi Corporation

FET RF N-CH 150V 2.9GHZ 55-QP

• Transistor Type: N-Channel
• Frequency: 2.7GHz ~ 2.9GHz
• Gain: 13.3dB ~ 13.8dB
• Voltage - Test: 60V
• Current Rating: 5mA
• Noise Figure: -
• Current - Test: 500mA
• Power - Output: 304W
• Voltage - Rated: 150V
• Package / Case: 55QP
• Supplier Device Package: 55QP

pacchetto: 55QP

2N2857

Microsemi Corporation

TRANS RF BIPO NPN 15V 40MA TO72

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 500MHz
• Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
• Gain: 12.5dB ~ 21dB @ 450MHz
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
• Current - Collector (Ic) (Max): 40mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-206AF, TO-72-4 Metal Can
• Supplier Device Package: TO-72

pacchetto: TO-206AF, TO-72-4 Metal Can

2C2329

Microsemi Corporation

SCR SILICON CTRL RECTIFIER

• Voltage - Off State: -
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Voltage - On State (Vtm) (Max): -
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Current - Hold (Ih) (Max): -
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• SCR Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

JANTX1N4960C

Microsemi Corporation

DIODE ZENER 12V 5W E AXIAL

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 2.5 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: E, Axial
• Supplier Device Package: E, Axial

pacchetto: E, Axial

3EZ190D5E3/TR8

Microsemi Corporation

DIODE ZENER 190V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 190V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 800 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 144.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

SMBG5947AE3/TR13

Microsemi Corporation

DIODE ZENER 82V 2W SMBG

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±10%
• Power - Max: 2W
• Impedance (Max) (Zzt): 160 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 62.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

pacchetto: DO-215AA, SMB Gull Wing

1N4773

Microsemi Corporation

DIODE ZENER 9.1V 500MW DO35

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 0°C ~ 75°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

pacchetto: DO-204AH, DO-35, Axial

JANTXV1N5538D-1

Microsemi Corporation

DIODE ZENER 18V 500MW DO35

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 16.2V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

pacchetto: DO-204AH, DO-35, Axial

JAN1N4980DUS

Microsemi Corporation

DIODE ZENER 82V 5W D5B

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±1%
• Power - Max: 5W
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 62.2V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, E
• Supplier Device Package: D-5B

pacchetto: SQ-MELF, E

JANTXV1N4989US

Microsemi Corporation

DIODE ZENER 200V 5W D5B

• Voltage - Zener (Nom) (Vz): 200V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 500 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 152V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: E-MELF
• Supplier Device Package: D-5B

pacchetto: E-MELF

JANTX1N4616DUR-1

Microsemi Corporation

DIODE ZENER 2.2V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 2.2V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 1300 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

pacchetto: DO-213AA (Glass)

JANTX1N4119C-1

Microsemi Corporation

DIODE ZENER 28V 500MW DO35

• Voltage - Zener (Nom) (Vz): 28V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 21.3V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

pacchetto: DO-204AH, DO-35, Axial

JANTXV1N4114-1

Microsemi Corporation

DIODE ZENER 20V 500MW DO35

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 150 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 15.2V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

pacchetto: DO-204AH, DO-35, Axial

JAN1N4614-1

Microsemi Corporation

DIODE ZENER 1.8V 500MW DO35

• Voltage - Zener (Nom) (Vz): 1.8V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 1200 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

pacchetto: DO-204AH, DO-35, Axial

CDLL4740A

Microsemi Corporation

DIODE ZENER 10V DO213AB

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±5%
• Power - Max: -
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 7.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

pacchetto: DO-213AB, MELF

1N5935CPE3/TR12

Microsemi Corporation

DIODE ZENER 28V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 28V
• Tolerance: ±2%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 23 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 20.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

UM7306SM

Microsemi Corporation

DIODE PIN 600V SM

• Diode Type: PIN - Single
• Voltage - Peak Reverse (Max): 600V
• Current - Max: -
• Capacitance @ Vr, F: -
• Resistance @ If, F: -
• Power Dissipation (Max): 7.5W
• Operating Temperature: -55°C ~ 175°C (TA)
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

MSCD200-18

Microsemi Corporation

DIODE MODULE 1.8KV 200A D2

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1800V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 300A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 9mA @ 1800V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: D2
• Supplier Device Package: -

pacchetto: D2

M2GL150-FCS536I

Microsemi Corporation

IC FPGA 293 I/O 536FCBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 146124
• Total RAM Bits: 5120000
• Number of I/O: 293
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 536-LFBGA
• Supplier Device Package: 536-BGA (16x16)

pacchetto: 536-LFBGA

JANTX1N6040A

Microsemi Corporation

TVS DIODE 9VWM 15.6VC DO13

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 9V
• Voltage - Breakdown (Min): 10.5V
• Voltage - Clamping (Max) @ Ipp: 15.6V
• Current - Peak Pulse (10/1000µs): 96A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-13 (DO-202AA)

pacchetto: DO-13

MLCE11A

Microsemi Corporation

TVS DIODE 11VWM 18.2VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 11V
• Voltage - Breakdown (Min): 12.2V
• Voltage - Clamping (Max) @ Ipp: 18.2V
• Current - Peak Pulse (10/1000µs): 82A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

pacchetto: DO-201AA, DO-27, Axial

MXLRT100KP78AE3

Microsemi Corporation

TVS DIODE 78VWM 153VC CASE5A

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 78V
• Voltage - Breakdown (Min): 86.7V
• Voltage - Clamping (Max) @ Ipp: 153V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 100000W (100kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

pacchetto: DO-204AR, Axial

MXLP4KE100A

Microsemi Corporation

TVS DIODE 85.5VWM 137VC DO41

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 85.5V
• Voltage - Breakdown (Min): 95V
• Voltage - Clamping (Max) @ Ipp: 137V
• Current - Peak Pulse (10/1000µs): 2.9A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

MASMLJ10AE3

Microsemi Corporation

TVS DIODE 10VWM 17VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 10V
• Voltage - Breakdown (Min): 11.1V
• Voltage - Clamping (Max) @ Ipp: 17V
• Current - Peak Pulse (10/1000µs): 176.4A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

pacchetto: DO-214AB, SMC

SMCG5661/TR13

Microsemi Corporation

TVS DIODE 121VWM 215VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 121V
• Voltage - Breakdown (Min): 135V
• Voltage - Clamping (Max) @ Ipp: 215V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: DO-215AB (SMCG)

pacchetto: DO-215AB, SMC Gull Wing

MSMBJ12CAE3

Microsemi Corporation

TVS DIODE 12VWM 19.9VC DO214AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 12V
• Voltage - Breakdown (Min): 13.3V
• Voltage - Clamping (Max) @ Ipp: 19.9V
• Current - Peak Pulse (10/1000µs): 30.2A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

pacchetto: DO-214AA, SMB

SMDA15C-4E3/TR13

Microsemi Corporation

TVS DIODE 15VWM 30VC 8SOIC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 4
• Voltage - Reverse Standoff (Typ): 15V
• Voltage - Breakdown (Min): 16.7V
• Voltage - Clamping (Max) @ Ipp: 30V
• Current - Peak Pulse (10/1000µs): 5A (8/20µs)
• Power - Peak Pulse: 300W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 140pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacchetto: 8-SOIC (0.154", 3.90mm Width)