Prodotti Microsemi Corporation

APTGT75DDA60T3G

Microsemi Corporation

IGBT MOD TRENCH DL BST CHOP SP3

• IGBT Type: Trench Field Stop
• Configuration: Dual Boost Chopper
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 100A
• Power - Max: 250W
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
• Current - Collector Cutoff (Max): 250µA
• Input Capacitance (Cies) @ Vce: 4.62nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Supplier Device Package: SP3

pacchetto: SP3

APTCV60HM45RT3G

Microsemi Corporation

POWER MOD IGBT3 FULL BRIDGE SP3

• IGBT Type: Trench Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 50A
• Power - Max: 250W
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
• Current - Collector Cutoff (Max): 250µA
• Input Capacitance (Cies) @ Vce: 3.15nF @ 25V
• Input: Single Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Supplier Device Package: SP3

pacchetto: SP3

JAN1N5540CUR-1

Microsemi Corporation

DIODE ZENER 20V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 18V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: -

pacchetto: DO-213AA (Glass)

JANTXV1N4120CUR-1

Microsemi Corporation

DIODE ZENER 30V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 22.8V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

pacchetto: DO-213AA (Glass)

JANTX1N4460C

Microsemi Corporation

DIODE ZENER 6.2V 1.5W DO41

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: ±2%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 3.72V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

pacchetto: DO-204AL, DO-41, Axial

JANTX1N4976US

Microsemi Corporation

DIODE ZENER 56V 5W D5B

• Voltage - Zener (Nom) (Vz): 56V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 42.6V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: E-MELF
• Supplier Device Package: D-5B

pacchetto: E-MELF

CDLL5920B

Microsemi Corporation

DIODE ZENER 6.2V 1.25W DO213AB

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

pacchetto: DO-213AB, MELF

JAN1N759A-1

Microsemi Corporation

DIODE ZENER 12V 500MW DO35

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 9V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

pacchetto: DO-204AH, DO-35, Axial

2EZ51DE3/TR8

Microsemi Corporation

DIODE ZENER 51V 2W DO204AL

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±20%
• Power - Max: 2W
• Impedance (Max) (Zzt): 48 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 38.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

1PMT4126/TR7

Microsemi Corporation

DIODE ZENER 51V 1W DO216

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 250 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 38.76V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216

pacchetto: DO-216AA

SMAJ5955E3/TR13

Microsemi Corporation

DIODE ZENER 180V 3W DO214AC

• Voltage - Zener (Nom) (Vz): 180V
• Tolerance: ±20%
• Power - Max: 3W
• Impedance (Max) (Zzt): 900 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 136.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMAJ)

pacchetto: DO-214AC, SMA

JANTXV1N6623U

Microsemi Corporation

DIODE GEN PURP 800V 1A A-MELF

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 500nA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: D-5A
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: SQ-MELF, A

APT20SCD120B

Microsemi Corporation

DIODE SCHOTTKY 1.2KV 68A

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 68A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 400µA @ 1200V
• Capacitance @ Vr, F: 1135pF @ 0V, 1MHz
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

A2F060M3E-1TQ144I

Microsemi Corporation

IC FPGA 60K GATES 128KB 144-TQFP

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 128KB
• RAM Size: 16KB
• Peripherals: DMA, POR, WDT
• Connectivity: EBI/EMI, I2C, SPI, UART/USART
• Speed: 100MHz
• Primary Attributes: ProASIC?3 FPGA, 60K Gates, 1536D-Flip-Flops
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 144-LQFP
• Supplier Device Package: 144-TQFP (20x20)

pacchetto: 144-LQFP

M2S010T-FGG484I

Microsemi Corporation

IC FPGA SOC 10K LUT 484FBGA

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 256KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 10K Logic Modules
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

pacchetto: 484-BGA

AGLN030V5-ZVQ100

Microsemi Corporation

IC FPGA 77 I/O 100VQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 768
• Total RAM Bits: -
• Number of I/O: 77
• Number of Gates: 30000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -20°C ~ 85°C (TJ)
• Package / Case: 100-TQFP
• Supplier Device Package: 100-VQFP (14x14)

pacchetto: 100-TQFP

A42MX24-3PQ160I

Microsemi Corporation

IC FPGA 125 I/O 160QFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 125
• Number of Gates: 36000
• Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 160-BQFP
• Supplier Device Package: 160-PQFP (28x28)

pacchetto: 160-BQFP

A54SX72A-FG256

Microsemi Corporation

IC FPGA 203 I/O 256FBGA

• Number of LABs/CLBs: 6036
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 203
• Number of Gates: 108000
• Voltage - Supply: 2.25 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 256-BGA
• Supplier Device Package: 256-FPBGA (17x17)

pacchetto: 256-BGA

A3P250-1FG256T

Microsemi Corporation

IC FPGA 157 I/O 256FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 36864
• Number of I/O: 157
• Number of Gates: 250000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 256-LBGA
• Supplier Device Package: 256-FPBGA (17x17)

pacchetto: 256-LBGA

MRT100KP51AE3

Microsemi Corporation

TVS DIODE 51VWM 101VC CASE5A

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 51V
• Voltage - Breakdown (Min): 56.7V
• Voltage - Clamping (Max) @ Ipp: 101V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 100000W (100kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

pacchetto: DO-204AR, Axial

MP4KE47AE3

Microsemi Corporation

TVS DIODE 40.2VWM 64.8VC DO41

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 40.2V
• Voltage - Breakdown (Min): 44.7V
• Voltage - Clamping (Max) @ Ipp: 64.8V
• Current - Peak Pulse (10/1000µs): 6.2A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

MAP6KE51A

Microsemi Corporation

TVS DIODE 43.6VWM 70.1VC T18

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 43.6V
• Voltage - Breakdown (Min): 48.5V
• Voltage - Clamping (Max) @ Ipp: 70.1V
• Current - Peak Pulse (10/1000µs): 8.6A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

pacchetto: T-18, Axial

MPLAD15KP54CAE3

Microsemi Corporation

TVS DIODE 54VWM 87.1VC PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 54V
• Voltage - Breakdown (Min): 60V
• Voltage - Clamping (Max) @ Ipp: 87.1V
• Current - Peak Pulse (10/1000µs): 171A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

pacchetto: Nonstandard SMD

JAN1N6171US

Microsemi Corporation

TVS DIODE 121.6VWM 229.32VC CPKG

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 121.6V
• Voltage - Breakdown (Min): 144.4V
• Voltage - Clamping (Max) @ Ipp: 229.32V
• Current - Peak Pulse (10/1000µs): 6.56A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, C
• Supplier Device Package: C, SQ-MELF

pacchetto: SQ-MELF, C

MXLSMLG54CA

Microsemi Corporation

TVS DIODE 54VWM 87.1VC DO215AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 54V
• Voltage - Breakdown (Min): 60V
• Voltage - Clamping (Max) @ Ipp: 87.1V
• Current - Peak Pulse (10/1000µs): 34.4A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMLG (DO-215AB)

pacchetto: DO-215AB, SMC Gull Wing

15KPA22CE3/TR13

Microsemi Corporation

TVS DIODE 22VWM R6

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 22V
• Voltage - Breakdown (Min): 23.17V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

pacchetto: P600, Axial

MAPLAD6.5KP100A

Microsemi Corporation

TVS DIODE 100VWM 162VC MINIPLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 100V
• Voltage - Breakdown (Min): 111V
• Voltage - Clamping (Max) @ Ipp: 162V
• Current - Peak Pulse (10/1000µs): 40.1A
• Power - Peak Pulse: 6500W (6.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: Mini-PLAD

pacchetto: Nonstandard SMD

MSMLJ6.0CAE3

Microsemi Corporation

TVS DIODE 6VWM 10.3VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 6V
• Voltage - Breakdown (Min): 6.67V
• Voltage - Clamping (Max) @ Ipp: 10.3V
• Current - Peak Pulse (10/1000µs): 291.3A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

pacchetto: DO-214AB, SMC