Prodotti Microsemi Corporation

APTM20SKM08TG

Microsemi Corporation

MOSFET N-CH 200V 208A SP4

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 208A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 781W (Tc)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SP4
• Package / Case: SP4

pacchetto: SP4

APT24M80B

Microsemi Corporation

MOSFET N-CH 800V 25A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4595pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 625W (Tc)
• Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 [B]
• Package / Case: TO-247-3

pacchetto: TO-247-3

APTC90H12T1G

Microsemi Corporation

MOSFET 4N-CH 900V 30A SP1

• FET Type: 4 N-Channel (H-Bridge)
• FET Feature: Super Junction
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 30A
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
• Power - Max: 250W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Supplier Device Package: SP1

pacchetto: SP1

JAN2N3810

Microsemi Corporation

TRANS 2PNP 60V 0.05A TO78

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

pacchetto: TO-78-6 Metal Can

1N985B

Microsemi Corporation

DIODE ZENER 100V 500MW DO7

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 500 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 76V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AA, DO-7, Axial
• Supplier Device Package: DO-7

pacchetto: DO-204AA, DO-7, Axial

JANTX1N4128D-1

Microsemi Corporation

DIODE ZENER 60V 500MW DO35

• Voltage - Zener (Nom) (Vz): 60V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 400 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 45.6V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

pacchetto: DO-204AH, DO-35, Axial

CDLL4490

Microsemi Corporation

DIODE ZENER 110V 1.5W DO213AB

• Voltage - Zener (Nom) (Vz): 110V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 250nA @ 88V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

pacchetto: DO-213AB, MELF

1N5345CE3/TR8

Microsemi Corporation

DIODE ZENER 8.7V 5W T18

• Voltage - Zener (Nom) (Vz): 8.7V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 6.25V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

pacchetto: T-18, Axial

1N5935APE3/TR8

Microsemi Corporation

DIODE ZENER 28V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 28V
• Tolerance: ±10%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 23 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 20.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

SMBJ4760A/TR13

Microsemi Corporation

DIODE ZENER 68V 2W SMBJ

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 150 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 51.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

pacchetto: DO-214AA, SMB

1PMT5934CE3/TR13

Microsemi Corporation

DIODE ZENER 24V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±2%
• Power - Max: 3W
• Impedance (Max) (Zzt): 19 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 18.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

pacchetto: DO-216AA

1N5189US

Microsemi Corporation

DIODE GEN PURP 500V 3A D5B

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 500V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 300ns
• Current - Reverse Leakage @ Vr: 2µA @ 500V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: E-MELF
• Supplier Device Package: D-5B
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: E-MELF

HSM140GE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 1A 40V SMBG

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

pacchetto: -

LE79R79-1DJCT

Microsemi Corporation

IC SLIC 1CH 52DB LGBAL 32PLCC

• Function: Subscriber Line Interface Concept (SLIC)
• Interface: 2-Wire
• Number of Circuits: 1
• Voltage - Supply: 4.75 V ~ 5.25 V
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 32-LCC (J-Lead)
• Supplier Device Package: 32-PLCC (11.43x13.97)

pacchetto: 32-LCC (J-Lead)

AGL1000V2-FG144T

Microsemi Corporation

IC FPGA 97 I/O 144FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 24576
• Total RAM Bits: 147456
• Number of I/O: 97
• Number of Gates: 1000000
• Voltage - Supply: 1.14 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 144-LBGA
• Supplier Device Package: 144-FPBGA (13x13)

pacchetto: 144-LBGA

EX128-PTQG100

Microsemi Corporation

IC FPGA 70 I/O 100TQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 256
• Total RAM Bits: -
• Number of I/O: 70
• Number of Gates: 6000
• Voltage - Supply: 2.3 V ~ 2.7 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

pacchetto: 100-LQFP

APA1000-CQ208M

Microsemi Corporation

IC FPGA 158 I/O 208CQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 202752
• Number of I/O: 158
• Number of Gates: 1000000
• Voltage - Supply: 2.3 V ~ 2.7 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TC)
• Package / Case: 208-BFCQFP with Tie Bar
• Supplier Device Package: 208-CQFP (75x75)

pacchetto: 208-BFCQFP with Tie Bar

M2GL060-FG484I

Microsemi Corporation

IC FPGA 267 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 56520
• Total RAM Bits: 1869824
• Number of I/O: 267
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

pacchetto: 484-BGA

A3P060-2TQ144I

Microsemi Corporation

IC FPGA 91 I/O 144TQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 18432
• Number of I/O: 91
• Number of Gates: 60000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 144-LQFP
• Supplier Device Package: 144-TQFP (20x20)

pacchetto: 144-LQFP

MXPLAD18KP12CA

Microsemi Corporation

TVS DIODE 19.9VC 905A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 12V
• Voltage - Breakdown (Min): 13.3V
• Voltage - Clamping (Max) @ Ipp: 19.9V
• Current - Peak Pulse (10/1000µs): 905A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

pacchetto: Nonstandard SMD

MXLPLAD18KP45CAE3

Microsemi Corporation

TVS DIODE 72.7VC 248A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 45V
• Voltage - Breakdown (Min): 50V
• Voltage - Clamping (Max) @ Ipp: 72.7V
• Current - Peak Pulse (10/1000µs): 248A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

pacchetto: Nonstandard SMD

MXLPLAD18KP43CAE3

Microsemi Corporation

TVS DIODE 69.4VC 260A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 43V
• Voltage - Breakdown (Min): 47.8V
• Voltage - Clamping (Max) @ Ipp: 69.4V
• Current - Peak Pulse (10/1000µs): 260A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

pacchetto: Nonstandard SMD

MAPLAD30KP30A

Microsemi Corporation

TVS DIODE 30VWM 48.8VC SMD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 30V
• Voltage - Breakdown (Min): 33.3V
• Voltage - Clamping (Max) @ Ipp: 48.8V
• Current - Peak Pulse (10/1000µs): 618A
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

pacchetto: Nonstandard SMD

MPLAD18KP22CA

Microsemi Corporation

TVS DIODE 35.5VC 508A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 22V
• Voltage - Breakdown (Min): 24.4V
• Voltage - Clamping (Max) @ Ipp: 35.5V
• Current - Peak Pulse (10/1000µs): 508A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

pacchetto: Nonstandard SMD

MXLSMCG40CA

Microsemi Corporation

TVS DIODE 40VWM 64.5VC DO215AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 40V
• Voltage - Breakdown (Min): 44.4V
• Voltage - Clamping (Max) @ Ipp: 64.5V
• Current - Peak Pulse (10/1000µs): 23.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

pacchetto: DO-215AB, SMC Gull Wing

MXLSMBG85A

Microsemi Corporation

TVS DIODE 85VWM 137VC DO215AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 85V
• Voltage - Breakdown (Min): 94.4V
• Voltage - Clamping (Max) @ Ipp: 137V
• Current - Peak Pulse (10/1000µs): 4.4A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

pacchetto: DO-215AA, SMB Gull Wing

MASMBG90CAE3

Microsemi Corporation

TVS DIODE 90VWM 146VC DO215AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 90V
• Voltage - Breakdown (Min): 100V
• Voltage - Clamping (Max) @ Ipp: 146V
• Current - Peak Pulse (10/1000µs): 4.1A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

pacchetto: DO-215AA, SMB Gull Wing

1N5949CG

Microsemi Corporation

DIODE ZENER 100V 1.25W DO204AL

• Voltage - Zener (Nom) (Vz): 100 V
• Tolerance: ±2%
• Power - Max: 1.25 W
• Impedance (Max) (Zzt): 250 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 76 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: -

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