Prodotti Microsemi Corporation

APT64GA90B

Microsemi Corporation

IGBT 900V 117A 500W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 900V
• Current - Collector (Ic) (Max): 117A
• Current - Collector Pulsed (Icm): 193A
• Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
• Power - Max: 500W
• Switching Energy: 1857µJ (on), 2311µJ (off)
• Input Type: Standard
• Gate Charge: 162nC
• Td (on/off) @ 25°C: 18ns/131ns
• Test Condition: 600V, 38A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

pacchetto: TO-247-3

APTGT300A170D3G

Microsemi Corporation

IGBT MODULE TRENCH PHASE LEG D3

• IGBT Type: Trench Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 530A
• Power - Max: 1470W
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 300A
• Current - Collector Cutoff (Max): 8mA
• Input Capacitance (Cies) @ Vce: 26nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: D-3 Module
• Supplier Device Package: D3

pacchetto: D-3 Module

JANTX2N6796U

Microsemi Corporation

MOSFET N-CH 100V 8A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 28.51nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 195 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 18-ULCC (9.14x7.49)
• Package / Case: 18-BQFN Exposed Pad

pacchetto: 18-BQFN Exposed Pad

JANTX1N6337US

Microsemi Corporation

DIODE ZENER 36V 500MW B SQ-MELF

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 50 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 27V
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF

pacchetto: SQ-MELF, B

1N5954B G

Microsemi Corporation

DIODE ZENER 160V 1.25W DO204AL

• Voltage - Zener (Nom) (Vz): 160V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 700 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 121.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

1N5339BE3/TR12

Microsemi Corporation

DIODE ZENER 5.6V 5W T18

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 1 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

pacchetto: T-18, Axial

1N2995RB

Microsemi Corporation

DIODE ZENER 47V 10W DO213AA

• Voltage - Zener (Nom) (Vz): 47V
• Tolerance: ±5%
• Power - Max: 10W
• Impedance (Max) (Zzt): 14 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 35.8V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-213AA

pacchetto: DO-203AA, DO-4, Stud

1N822

Microsemi Corporation

DIODE ZENER 6.2V 500MW DO7

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AA, DO-7, Axial
• Supplier Device Package: DO-7

pacchetto: DO-204AA, DO-7, Axial

1PMT5931A/TR13

Microsemi Corporation

DIODE ZENER 18V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±10%
• Power - Max: 3W
• Impedance (Max) (Zzt): 12 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 13.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

pacchetto: DO-216AA

2EZ27D5/TR12

Microsemi Corporation

DIODE ZENER 27V 2W DO204AL

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 18 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 20.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

2EZ33D/TR12

Microsemi Corporation

DIODE ZENER 33V 2W DO204AL

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±20%
• Power - Max: 2W
• Impedance (Max) (Zzt): 23 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 25.1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

2EZ56D2E3/TR12

Microsemi Corporation

DIODE ZENER 56V 2W DO204AL

• Voltage - Zener (Nom) (Vz): 56V
• Tolerance: ±2%
• Power - Max: 2W
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 42.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

1PMT5950AE3/TR13

Microsemi Corporation

DIODE ZENER 110V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 110V
• Tolerance: ±10%
• Power - Max: 3W
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 83.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

pacchetto: DO-216AA

A2F060M3E-TQG144

Microsemi Corporation

IC FPGA 60K GATES 128KB 144-TQFP

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 128KB
• RAM Size: 16KB
• Peripherals: DMA, POR, WDT
• Connectivity: EBI/EMI, I2C, SPI, UART/USART
• Speed: 80MHz
• Primary Attributes: ProASIC?3 FPGA, 60K Gates, 1536D-Flip-Flops
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 144-LQFP
• Supplier Device Package: 144-TQFP (20x20)

pacchetto: 144-LQFP

APA600-BGG456I

Microsemi Corporation

IC FPGA 356 I/O 456BGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 129024
• Number of I/O: 356
• Number of Gates: 600000
• Voltage - Supply: 2.3 V ~ 2.7 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 456-BBGA
• Supplier Device Package: 456-PBGA (35x35)

pacchetto: 456-BBGA

M2GL005S-1VFG256T2

Microsemi Corporation

IC FPGA 161 I/O 256VFG

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 6060
• Total RAM Bits: 719872
• Number of I/O: 161
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 125°C (TJ)
• Package / Case: 256-LBGA
• Supplier Device Package: 256-FPBGA (17x17)

pacchetto: 256-LBGA

APA150-PQG208

Microsemi Corporation

IC FPGA 158 I/O 208QFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 36864
• Number of I/O: 158
• Number of Gates: 150000
• Voltage - Supply: 2.3 V ~ 2.7 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 208-BFQFP
• Supplier Device Package: 208-PQFP (28x28)

pacchetto: 208-BFQFP

ZL30152GGG20039

Microsemi Corporation

IC CLK TRANSLATOR 2CH 100LBGA

• PLL: -
• Main Purpose: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

MP6KE160CAE3

Microsemi Corporation

TVS DIODE 136VWM 219VC T18

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 136V
• Voltage - Breakdown (Min): 152V
• Voltage - Clamping (Max) @ Ipp: 219V
• Current - Peak Pulse (10/1000µs): 2.7A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

pacchetto: T-18, Axial

MP6KE12AE3

Microsemi Corporation

TVS DIODE 10.2VWM 16.7VC T18

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 10.2V
• Voltage - Breakdown (Min): 11.4V
• Voltage - Clamping (Max) @ Ipp: 16.7V
• Current - Peak Pulse (10/1000µs): 36A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

pacchetto: T-18, Axial

MXRT100KP40CAE3

Microsemi Corporation

TVS DIODE 40VWM 78.6VC CASE5A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 40V
• Voltage - Breakdown (Min): 44.4V
• Voltage - Clamping (Max) @ Ipp: 78.6V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 100000W (100kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

pacchetto: DO-204AR, Axial

MXRT100KP160CA

Microsemi Corporation

TVS DIODE 160VWM 315VC CASE5A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 160V
• Voltage - Breakdown (Min): 178V
• Voltage - Clamping (Max) @ Ipp: 315V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 100000W (100kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

pacchetto: DO-204AR, Axial

JAN1N6134AUS

Microsemi Corporation

TVS DIODE 114VWM 206.3VC SQMELF

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 114V
• Voltage - Breakdown (Min): 142.5V
• Voltage - Clamping (Max) @ Ipp: 206.3V
• Current - Peak Pulse (10/1000µs): 2.4A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF

pacchetto: SQ-MELF, B

MXLSMBG7.5CAE3

Microsemi Corporation

TVS DIODE 7.5VWM 12.9VC DO215AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 7.5V
• Voltage - Breakdown (Min): 8.33V
• Voltage - Clamping (Max) @ Ipp: 12.9V
• Current - Peak Pulse (10/1000µs): 46.5A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

pacchetto: DO-215AA, SMB Gull Wing

MSMCG13CA

Microsemi Corporation

TVS DIODE 13VWM 21.5VC DO215AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 13V
• Voltage - Breakdown (Min): 14.4V
• Voltage - Clamping (Max) @ Ipp: 21.5V
• Current - Peak Pulse (10/1000µs): 69.7A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

pacchetto: DO-215AB, SMC Gull Wing

MSMCJ64AE3

Microsemi Corporation

TVS DIODE 64VWM 103VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 64V
• Voltage - Breakdown (Min): 71.1V
• Voltage - Clamping (Max) @ Ipp: 103V
• Current - Peak Pulse (10/1000µs): 14.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

pacchetto: DO-214AB, SMC

MSMBG14CA

Microsemi Corporation

TVS DIODE 14VWM 23.2VC DO215AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 14V
• Voltage - Breakdown (Min): 15.6V
• Voltage - Clamping (Max) @ Ipp: 23.2V
• Current - Peak Pulse (10/1000µs): 25.8A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

pacchetto: DO-215AA, SMB Gull Wing

M1.5KE39CAE3

Microsemi Corporation

TVS DIODE 33.3VWM 53.9VC CASE1

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 33.3V
• Voltage - Breakdown (Min): 37.1V
• Voltage - Clamping (Max) @ Ipp: 53.9V
• Current - Peak Pulse (10/1000µs): 28A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

pacchetto: DO-201AA, DO-27, Axial