Prodotti Microsemi Corporation

APT50GR120B2

Microsemi Corporation

IGBT 1200V 117A 694W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 117A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A
• Power - Max: 694W
• Switching Energy: 2.14mJ (on), 1.48mJ (off)
• Input Type: Standard
• Gate Charge: 445nC
• Td (on/off) @ 25°C: 28ns/237ns
• Test Condition: 600V, 50A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

pacchetto: TO-247-3

APTGF100A120T3WG

Microsemi Corporation

IGBT NPT PHASE 1200V 130A SP3

• IGBT Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 130A
• Power - Max: 657W
• Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
• Current - Collector Cutoff (Max): 250µA
• Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Supplier Device Package: SP3

pacchetto: SP3

JANTXV2N5152

Microsemi Corporation

TRANS NPN 80V 2A TO39

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
• Current - Collector Cutoff (Max): 50µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
• Power - Max: 1W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39 (TO-205AD)

pacchetto: TO-205AD, TO-39-3 Metal Can

JANTX1N754CUR-1

Microsemi Corporation

DIODE ZENER 6.8V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 6.8V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 5 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 4V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

pacchetto: DO-213AA (Glass)

JANTX1N4959CUS

Microsemi Corporation

DIODE ZENER 11V 5W D5B

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 2.5 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 8.4V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, E
• Supplier Device Package: D-5B

pacchetto: SQ-MELF, E

JANTXV1N4372DUR-1

Microsemi Corporation

DIODE ZENER 3V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 3V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 29 Ohms
• Current - Reverse Leakage @ Vr: 30µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

pacchetto: DO-213AA (Glass)

1N3306RB

Microsemi Corporation

DIODE ZENER 7.5V 50W DO5

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±5%
• Power - Max: 50W
• Impedance (Max) (Zzt): 0.3 Ohms
• Current - Reverse Leakage @ Vr: 125µA @ 5V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5

pacchetto: DO-203AB, DO-5, Stud

JANTXV1N4128D-1

Microsemi Corporation

DIODE ZENER 60V 500MW DO35

• Voltage - Zener (Nom) (Vz): 60V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 400 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 45.6V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

pacchetto: DO-204AH, DO-35, Axial

JAN1N4979CUS

Microsemi Corporation

DIODE ZENER 75V 5W D5B

• Voltage - Zener (Nom) (Vz): 75V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 56V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, E
• Supplier Device Package: D-5B

pacchetto: SQ-MELF, E

CDLL5539A

Microsemi Corporation

DIODE ZENER 19V 500MW DO213AB

• Voltage - Zener (Nom) (Vz): 19V
• Tolerance: ±10%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 16V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

pacchetto: DO-213AB, MELF

1N5919CPE3/TR8

Microsemi Corporation

DIODE ZENER 5.6V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±2%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

UFS360GE3/TR13

Microsemi Corporation

DIODE GEN PURP 600V 3A DO215AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: DO-215AB
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-215AB, SMC Gull Wing

LSM120GE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 1A 20V SMBG

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

pacchetto: -

CPT60145D

Microsemi Corporation

DIODE MODULE 45V TO244AB

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 300A
• Voltage - Forward (Vf) (Max) @ If: 650mV @ 300A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 8mA @ 45V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: TO-244AB
• Supplier Device Package: TO-244AB

pacchetto: TO-244AB

LE79555-2BVCT

Microsemi Corporation

IC SLIC 1CH SWREG 63DB 44TQFP

• Function: Subscriber Line Interface Concept (SLIC)
• Interface: 2-Wire
• Number of Circuits: 1
• Voltage - Supply: 4.75 V ~ 5.25 V
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 44-TQFP
• Supplier Device Package: 44-TQFP (10x10)

pacchetto: 44-TQFP

M2S090TS-FGG676

Microsemi Corporation

IC FPGA SOC 90K LUTS

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 512KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 90K Logic Modules
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 676-BGA
• Supplier Device Package: 676-FBGA (27x27)

pacchetto: 676-BGA

AX125-2FGG324

Microsemi Corporation

IC FPGA 168 I/O 324FBGA

• Number of LABs/CLBs: 2016
• Number of Logic Elements/Cells: -
• Total RAM Bits: 18432
• Number of I/O: 168
• Number of Gates: 125000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 324-BGA
• Supplier Device Package: 324-FBGA (19x19)

pacchetto: 324-BGA

A1240A-1PG132B

Microsemi Corporation

IC FPGA 104 I/O 132CPGA

• Number of LABs/CLBs: 684
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 104
• Number of Gates: 4000
• Voltage - Supply: 4.5 V ~ 5.5 V
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 125°C (TJ)
• Package / Case: 132-BCPGA
• Supplier Device Package: 132-CPGA (34.54x34.54)

pacchetto: 132-BCPGA

A40MX04-1PQG100M

Microsemi Corporation

IC FPGA 69 I/O 100QFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 69
• Number of Gates: 6000
• Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TC)
• Package / Case: 100-BQFP
• Supplier Device Package: 100-PQFP (14x20)

pacchetto: 100-BQFP

MA1.5KE220CAE3

Microsemi Corporation

TVS DIODE 185VWM 328VC DO204AR

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 185V
• Voltage - Breakdown (Min): 209V
• Voltage - Clamping (Max) @ Ipp: 328V
• Current - Peak Pulse (10/1000µs): 4.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: DO-204AR

pacchetto: DO-204AR, Axial

MXPLAD30KP75AE3

Microsemi Corporation

TVS DIODE 75VWM 121VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 75V
• Voltage - Breakdown (Min): 83.3V
• Voltage - Clamping (Max) @ Ipp: 121V
• Current - Peak Pulse (10/1000µs): 246A
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

pacchetto: Nonstandard SMD

MXPLAD36KP70AE3

Microsemi Corporation

TVS DIODE 113VC 319A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 70V
• Voltage - Breakdown (Min): 77.8V
• Voltage - Clamping (Max) @ Ipp: 113V
• Current - Peak Pulse (10/1000µs): 319A
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

pacchetto: Nonstandard SMD

MPLAD15KP45CAE3

Microsemi Corporation

TVS DIODE 45VWM 72.7VC PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 45V
• Voltage - Breakdown (Min): 50V
• Voltage - Clamping (Max) @ Ipp: 72.7V
• Current - Peak Pulse (10/1000µs): 207A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

pacchetto: Nonstandard SMD

MXP4KE220A

Microsemi Corporation

TVS DIODE 185VWM 328VC DO41

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 185V
• Voltage - Breakdown (Min): 209V
• Voltage - Clamping (Max) @ Ipp: 328V
• Current - Peak Pulse (10/1000µs): 1A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

MXLSMCG13CAE3

Microsemi Corporation

TVS DIODE 13VWM 21.5VC DO215AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 13V
• Voltage - Breakdown (Min): 14.4V
• Voltage - Clamping (Max) @ Ipp: 21.5V
• Current - Peak Pulse (10/1000µs): 69.7A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

pacchetto: DO-215AB, SMC Gull Wing

1N6464

Microsemi Corporation

TVS DIODE 15VWM 26.5VC BPKG AXL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 15V
• Voltage - Breakdown (Min): 16.4V
• Voltage - Clamping (Max) @ Ipp: 26.5V
• Current - Peak Pulse (10/1000µs): 107A (8/20µs)
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: B, Axial
• Supplier Device Package: Axial

pacchetto: B, Axial

MASMLJ120A

Microsemi Corporation

TVS DIODE 120VWM 193VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 120V
• Voltage - Breakdown (Min): 133V
• Voltage - Clamping (Max) @ Ipp: 193V
• Current - Peak Pulse (10/1000µs): 15.6A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

pacchetto: DO-214AB, SMC

MASMBG28CAE3

Microsemi Corporation

TVS DIODE 28VWM 45.4VC DO215AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 28V
• Voltage - Breakdown (Min): 31.1V
• Voltage - Clamping (Max) @ Ipp: 45.4V
• Current - Peak Pulse (10/1000µs): 13.2A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

pacchetto: DO-215AA, SMB Gull Wing