Pagina 22 - Prodotti Microsemi Corporation - Transistor - Bipolari (BJT) - Singoli | Heisener Electronics
Contattaci
SalesDept@heisener.com +86-755-83210559 ext. 813
Accesso/Registrati
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrello 0

Prodotti Microsemi Corporation - Transistor - Bipolari (BJT) - Singoli

Record 859
Pagina  22/31
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
JANTXV2N2432A
Microsemi Corporation

TRANS NPN 45V 0.1A TO-18

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
  • Power - Max: 300mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione5.600
100mA
45V
0.15mV @ 500µA, 10V
10nA
80 @ 1mA, 5V
300mW
-
-65°C ~ 175°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
JANTX2N5684
Microsemi Corporation

TRANS NPN 80V 50A TO-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
  • Current - Collector Cutoff (Max): 5µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5A, 2V
  • Power - Max: 300W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
pacchetto: TO-204AA, TO-3
Azione2.320
50A
80V
5V @ 10A, 50A
5µA
30 @ 5A, 2V
300W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
JANTX2N4405
Microsemi Corporation

TRANS NPN TO-39

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
pacchetto: TO-205AD, TO-39-3 Metal Can
Azione4.240
-
-
-
-
-
-
-
200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
JANTX2N3960
Microsemi Corporation

TRANS NPN 12V TO-18

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 30mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 1V
  • Power - Max: 400mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione2.576
-
12V
300mV @ 3mA, 30mA
10µA (ICBO)
60 @ 10mA, 1V
400mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
JANTX2N3763
Microsemi Corporation

TRANSISTOR PNP TO-39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
pacchetto: TO-205AD, TO-39-3 Metal Can
Azione6.688
1.5A
60V
900mV @ 100mA, 1A
10µA (ICBO)
20 @ 1A, 1.5V
1W
-
-55°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
JANTX2N3743
Microsemi Corporation

TRANS PNP 300V 0.2A TO-39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3mA, 30mA
  • Current - Collector Cutoff (Max): 250nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
pacchetto: TO-205AD, TO-39-3 Metal Can
Azione2.336
200mA
300V
1.2V @ 3mA, 30mA
250nA (ICBO)
50 @ 30mA, 10V
1W
-
-
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
JANTX2N3468
Microsemi Corporation

TRANS PNP 50V 1A TO-39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 1V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
pacchetto: TO-205AD, TO-39-3 Metal Can
Azione4.944
1A
50V
1.2V @ 100mA, 1A
100nA (ICBO)
25 @ 500mA, 1V
1W
-
-55°C ~ 175°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
JANTX2N3442
Microsemi Corporation

TRANS NPN 140V 10A TO-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
  • Power - Max: 6W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
pacchetto: TO-204AA, TO-3
Azione4.688
10A
140V
1V @ 300mA, 3A
-
20 @ 3A, 4V
6W
-
-55°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
hot JANTX2N1486
Microsemi Corporation

TRANS NPN 55V 3A TO-8

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 40mA, 750mA
  • Current - Collector Cutoff (Max): 15µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 750mA, 4V
  • Power - Max: 1.75W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-233AA, TO-8-3 Metal Can
  • Supplier Device Package: TO-8
pacchetto: TO-233AA, TO-8-3 Metal Can
Azione10.716
3A
55V
750mV @ 40mA, 750mA
15µA
35 @ 750mA, 4V
1.75W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-233AA, TO-8-3 Metal Can
TO-8
JAN2N2945A
Microsemi Corporation

TRANS PNP 20V 0.1A TO-46

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
  • Power - Max: 400mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46
pacchetto: TO-206AB, TO-46-3 Metal Can
Azione6.192
100mA
20V
-
10µA (ICBO)
70 @ 1mA, 500mV
400mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AB, TO-46-3 Metal Can
TO-46
JAN2N1482
Microsemi Corporation

TRANS NPN 55V 1.5A TO-5

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 4V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
pacchetto: TO-205AA, TO-5-3 Metal Can
Azione3.680
1.5A
55V
750mV @ 10mA, 200mA
5µA (ICBO)
35 @ 200mA, 4V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5
hot 2N5578
Microsemi Corporation

TRANS NPN TO-66

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.096
-
-
-
-
-
-
-
-
-
-
-
hot 2N3866
Microsemi Corporation

TRANS NPN 30V 0.4A TO-39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 400mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 20µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-205AD
pacchetto: TO-205AD, TO-39-3 Metal Can
Azione32.508
400mA
30V
1V @ 10mA, 100mA
20µA
15 @ 50mA, 5V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-205AD
hot 2N3737
Microsemi Corporation

TRANS NPN 40V 1.5A TO-46

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46-3
pacchetto: TO-206AB, TO-46-3 Metal Can
Azione16.524
1.5A
40V
900mV @ 100mA, 1A
10µA (ICBO)
20 @ 1A, 1.5V
500mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AB, TO-46-3 Metal Can
TO-46-3
2N3439L
Microsemi Corporation

TRANS NPN 350V 1A TO-5

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
  • Current - Collector Cutoff (Max): 2µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Power - Max: 800mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
pacchetto: TO-205AA, TO-5-3 Metal Can
Azione7.632
1A
350V
500mV @ 4mA, 50mA
2µA
40 @ 20mA, 10V
800mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5
2N2905AL
Microsemi Corporation

TRANS PNP 60V 0.6A

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 800mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
pacchetto: TO-205AA, TO-5-3 Metal Can
Azione3.392
600mA
60V
1.6V @ 50mA, 500mA
1µA
100 @ 150mA, 10V
800mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5
2N2369AUB
Microsemi Corporation

TRANS NPN 15V SMD

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
  • Power - Max: 360mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Surface Mount
  • Supplier Device Package: SMD
pacchetto: Surface Mount
Azione6.560
-
15V
450mV @ 10mA, 100mA
400nA
20 @ 100mA, 1V
360mW
-
-65°C ~ 200°C (TJ)
Surface Mount
Surface Mount
SMD
2N2369AUA
Microsemi Corporation

TRANS NPN 15V SMD

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
  • Power - Max: 360mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Surface Mount
  • Supplier Device Package: SMD
pacchetto: Surface Mount
Azione2.624
-
15V
450mV @ 10mA, 100mA
400nA
20 @ 100mA, 1V
360mW
-
-65°C ~ 200°C (TJ)
Surface Mount
Surface Mount
SMD
2N2219AL
Microsemi Corporation

TRANS NPN 50V 0.8A TO-39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 800mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
pacchetto: TO-205AD, TO-39-3 Metal Can
Azione2.064
800mA
50V
1V @ 50mA, 500mA
10nA
100 @ 150mA, 10V
800mW
-
-55°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
hot 2N2219
Microsemi Corporation

TRANS NPN 30V 0.8A TO-39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 800mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
pacchetto: TO-205AD, TO-39-3 Metal Can
Azione16.152
800mA
30V
1.6V @ 50mA, 500mA
10nA
100 @ 150mA, 10V
800mW
-
-55°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
2N2907AUA
Microsemi Corporation

TRANS PNP 60V 0.6A

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: -
pacchetto: 4-SMD, No Lead
Azione7.648
600mA
60V
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500mW
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
-
hot 2N2906A
Microsemi Corporation

TRANS PNP 60V 0.6A TO-18

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione49.476
600mA
60V
1.6V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
500mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
JANTXV2N5582
Microsemi Corporation

TRANS NPN 50V 0.8A TO46

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46-3
pacchetto: TO-206AB, TO-46-3 Metal Can
Azione2.704
800mA
50V
1V @ 50mA, 500mA
10µA (ICBO)
100 @ 150mA, 10V
500mW
-
-55°C ~ 200°C (TJ)
Through Hole
TO-206AB, TO-46-3 Metal Can
TO-46-3
JANTXV2N4033
Microsemi Corporation

TRANS PNP 80V 1A TO39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
pacchetto: TO-205AD, TO-39-3 Metal Can
Azione6.160
1A
80V
1V @ 100mA, 1A
10µA (ICBO)
100 @ 100mA, 5V
800mW
-
-55°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
JANTXV2N4029
Microsemi Corporation

TRANS PNP 80V 1A TO18

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione7.488
1A
80V
1V @ 100mA, 1A
10µA (ICBO)
100 @ 100mA, 5V
500mW
-
-55°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
JANTXV2N3737UB
Microsemi Corporation

TRANS NPN 40V 1.5A UB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: -
pacchetto: 3-SMD, No Lead
Azione3.120
1.5A
40V
900mV @ 100mA, 1A
10µA (ICBO)
20 @ 1A, 1.5V
500mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
-
JANTXV2N3737
Microsemi Corporation

TRANS NPN 40V 1.5A TO46

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46-3
pacchetto: TO-206AB, TO-46-3 Metal Can
Azione4.336
1.5A
40V
900mV @ 100mA, 1A
10µA (ICBO)
20 @ 1A, 1.5V
500mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AB, TO-46-3 Metal Can
TO-46-3
JANTXV2N3735L
Microsemi Corporation

TRANS NPN 40V 1.5A TO5

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
pacchetto: TO-205AA, TO-5-3 Metal Can
Azione5.120
1.5A
40V
900mV @ 100mA, 1A
10µA (ICBO)
20 @ 1A, 1.5V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5